- 专利标题： Methods of performing fin cut etch processes for FinFET semiconductor devices
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申请号： US17169918申请日： 2021-02-08
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公开(公告)号： US11469146B2公开(公告)日： 2022-10-11
- 发明人: Lei L. Zhuang , Balasubramanian Pranatharthiharan , Lars Liebmann , Ruilong Xie , Terence Hook
- 申请人： GLOBALFOUNDRIES U.S. Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： GLOBALFOUNDRIES U.S. Inc.
- 当前专利权人： GLOBALFOUNDRIES U.S. Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Hoffman Warnick LLC
- 代理商 David Cain
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/092 ; H01L29/06 ; H01L29/08 ; H01L29/66 ; H01L21/8234 ; H01L29/78 ; H01L27/11
摘要：
In a self-aligned fin cut process for fabricating integrated circuits, a sacrificial gate or an epitaxially-formed source/drain region is used as an etch mask in conjunction with a fin cut etch step to remove unwanted portions of the fins. The process eliminates use of a lithographically-defined etch mask to cut the fins, which enables precise and accurate alignment of the fin cut.
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