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公开(公告)号：US11469146B2
公开(公告)日：2022-10-11
申请号：US17169918
申请日：2021-02-08
IPC分类号： H01L21/8238 , H01L27/092 , H01L29/06 , H01L29/08 , H01L29/66 , H01L21/8234 , H01L29/78 , H01L27/11
摘要： In a self-aligned fin cut process for fabricating integrated circuits, a sacrificial gate or an epitaxially-formed source/drain region is used as an etch mask in conjunction with a fin cut etch step to remove unwanted portions of the fins. The process eliminates use of a lithographically-defined etch mask to cut the fins, which enables precise and accurate alignment of the fin cut.
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公开(公告)号：US20210183709A1
公开(公告)日：2021-06-17
申请号：US17169918
申请日：2021-02-08
IPC分类号： H01L21/8238 , H01L27/092 , H01L29/06 , H01L29/08 , H01L29/66 , H01L21/8234
摘要： In a self-aligned fin cut process for fabricating integrated circuits, a sacrificial gate or an epitaxially-formed source/drain region is used as an etch mask in conjunction with a fin cut etch step to remove unwanted portions of the fins. The process eliminates use of a lithographically-defined etch mask to cut the fins, which enables precise and accurate alignment of the fin cut.
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公开(公告)号：US10916478B2
公开(公告)日：2021-02-09
申请号：US15899508
申请日：2018-02-20
IPC分类号： H01L21/8238 , H01L27/092 , H01L29/06 , H01L29/08 , H01L29/66 , H01L21/8234 , H01L29/78 , H01L27/11
摘要： In a self-aligned fin cut process for fabricating integrated circuits, a sacrificial gate or an epitaxially-formed source/drain region is used as an etch mask in conjunction with a fin cut etch step to remove unwanted portions of the fins. The process eliminates use of a lithographically-defined etch mask to cut the fins, which enables precise and accurate alignment of the fin cut.
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