知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

154 条记录 (耗时 0.022 秒)

    Methods of forming V0 structures for semiconductor devices by forming a protection layer with a non-uniform thickness
    1.
    发明授权
    Methods of forming V0 structures for semiconductor devices by forming a protection layer with a non-uniform thickness 有权

    公开(公告)号：US10546854B2

    公开(公告)日：2020-01-28

    申请号：US14732038

    申请日：2015-06-05

    申请人： GLOBALFOUNDRIES Inc.

    发明人： Ruilong Xie ,  Xunyuan Zhang

    IPC分类号： H01L27/088 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/417 ,  H01L21/768 ,  H01L23/485

    摘要： One illustrative method disclosed herein includes, among other things, forming a source/drain contact structure between two spaced-apart transistor gate structures, forming a non-uniform thickness layer of material on the upper surface of the gate cap layers and on the upper surface of the source/drain contact structure, wherein the non-uniform thickness layer of material is thicker above the gate cap layers than it is above the source/drain contact structure, forming an opening in the non-uniform thickness layer of material so as to expose at least a portion of the source/drain contact structure, and forming a V0 via that is conductively coupled to the exposed portion of the source/drain contact structure, the V0 via being at least partially positioned in the opening in the non-uniform thickness layer of material.

    Self-aligned metal wire on contact structure and method for forming same
    2.
    发明授权
    Self-aligned metal wire on contact structure and method for forming same 有权

    公开(公告)号：US10199271B1

    公开(公告)日：2019-02-05

    申请号：US15693651

    申请日：2017-09-01

    申请人： GLOBALFOUNDRIES Inc.

    发明人： Ruilong Xie ,  Guillaume Bouche ,  Laertis Economikos ,  Lei Sun ,  Guoxiang Ning ,  Xunyuan Zhang

    IPC分类号： H01L29/45 ,  H01L21/768 ,  H01L29/78 ,  H01L29/08 ,  H01L23/535 ,  H01L21/285 ,  H01L23/532 ,  H01L23/528

    摘要： A structure and method for forming a self-aligned metal wire on a contact structure. The method for forming the self-aligned metal wire and contact structure may include, among other things, forming an initial contact structure above a substrate; forming a patterned mask on the initial contact structure, the mask including an opening; using the patterned mask to form an opening through the initial contact structure; forming a dielectric layer in the openings; removing the patterned mask to expose a remaining portion of the initial contact structure; and forming the metal wire on the remaining portion of the initial contact structure. The contact structure may include a vertical cross-sectional geometry including one of a trapezoid wherein a bottommost surface of the first contact structure is wider than an uppermost surface of the first contact structure, and a parallelogram. The metal wire may completely contact an uppermost surface of the contact structure.

    METHODS OF FORMING CONDUCTIVE STRUCTURES
    3.
    发明申请
    METHODS OF FORMING CONDUCTIVE STRUCTURES 审中-公开

    公开(公告)号：US20180277426A1

    公开(公告)日：2018-09-27

    申请号：US15467628

    申请日：2017-03-23

    申请人： GLOBALFOUNDRIES Inc.

    发明人： Ruilong Xie ,  Xunyuan Zhang

    IPC分类号： H01L21/768 ,  H01L21/3213 ,  H01L23/532 ,  H01L23/528

    CPC分类号： H01L21/76877 ,  H01L21/7684 ,  H01L21/76844 ,  H01L23/53238 ,  H01L23/53266

    摘要： One illustrative method disclosed herein includes, among other things, forming a first trench/via and a wider second trench/via in a layer of insulating material, forming a conductive adhesion layer in the first and second trench/vias and forming a conductive liner layer in the second trench/via such that the material of the conductive liner layer substantially fills the first trench/via. In this particular example, the method also includes removing portions of the conductive liner layer positioned within the second trench/via and above an upper surface of the conductive adhesion layer and removing portions of the conductive adhesion layer positioned above an upper surface of the layer of insulating material to define a conductive structure positioned in the first trench/via that comprises the material of the conductive adhesion layer and the material of the conductive liner layer.

    Sidewall spacer pattern formation method
    7.
    发明授权
    Sidewall spacer pattern formation method 有权

    公开(公告)号：US09911604B1

    公开(公告)日：2018-03-06

    申请号：US15413823

    申请日：2017-01-24

    申请人： GLOBALFOUNDRIES INC.

    发明人： Lei Sun ,  Xunyuan Zhang ,  Ruilong Xie ,  Yulu Chen

    IPC分类号： H01L21/311 ,  H01L21/027 ,  H01L29/66

    CPC分类号： H01L21/0337 ,  H01L21/0274 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L29/785

    摘要： Disclosed are methods of using a lithography-lithography-etch (LLE) technique to form a sidewall spacer pattern for patterning a target layer. In the methods, a photoresist layer is patterned by performing multiple lithographic processes with different photomasks, including a first photomask with a first pattern of parallel bars separated by spaces and a second photomask with a second pattern of opening(s) oriented in an essentially perpendicular direction as compared to the bar(s). The photoresist layer is then developed, creating a third pattern. The third pattern is transferred into a mandrel layer below to form mandrels of different lengths. Then, sidewall spacers are formed on the mandrels and the mandrels are selectively removed to form the sidewall spacer pattern. This sidewall spacer pattern is subsequently used in a sidewall image transfer (SIT) process to pattern a target layer below.