- 专利标题: Self-aligned lithographic patterning
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申请号: US15359037申请日: 2016-11-22
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公开(公告)号: US10056292B2公开(公告)日: 2018-08-21
- 发明人: Shao Beng Law , Genevieve Beique , Frank W. Mont , Lei Sun , Xunyuan Zhang
- 申请人: GLOBALFOUNDRIES Inc.
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Thompson Hine LLP
- 代理商 Anthony Canale
- 主分类号: H01L21/44
- IPC分类号: H01L21/44 ; H01L21/768 ; H01L21/3065 ; H01L21/308
摘要:
Methods of lithographic patterning. A metal hardmask layer is formed on a dielectric layer and a patterned layer is formed on the metal hardmask layer. A metal layer is formed on an area of the metal hardmask layer exposed by an opening in the patterned layer. After the metal layer is formed, the patterned layer is removed from the metal hardmask layer. After the patterned layer is removed, the metal hardmask layer is patterned with the metal layer masking the metal hardmask layer over the area.
公开/授权文献
- US20180144979A1 SELF-ALIGNED LITHOGRAPHIC PATTERNING 公开/授权日:2018-05-24
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