知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

32 条记录 (耗时 0.021 秒)

    WAFER LEVEL STACKED STRUCTURES HAVING INTEGRATED PASSIVE FEATURES
    4.
    发明申请
    WAFER LEVEL STACKED STRUCTURES HAVING INTEGRATED PASSIVE FEATURES 有权

    公开(公告)号：US20220367339A1

    公开(公告)日：2022-11-17

    申请号：US17875205

    申请日：2022-07-27

    申请人： General Electric Company

    发明人： Marco Francesco Aimi ,  Joseph Alfred Iannotti ,  Joleyn Eileen Brewer

    IPC分类号： H01L23/522 ,  H01L49/02 ,  H01L21/48 ,  B81C1/00 ,  B81B7/02 ,  B81B7/00 ,  B81C3/00

    摘要： A method includes obtaining an active feature layer having a first surface bearing one or more active feature areas. A first capacitor plate of a first capacitor is formed on an interior surface of a cap. A second capacitor plate of the first capacitor is formed on an exterior surface of the cap. The first capacitor plate of the first capacitor overlays and is spaced apart from the second capacitor plate of the first capacitor along a direction that is orthogonal to the exterior surface of the cap to form the first capacitor. The cap is coupled with the first surface of the active feature layer such that the second capacitor plate of the first capacitor is in electrical communication with at least a first active feature of the active feature layer. The cap is bonded with the passive layer substrate.

    Methods for forming a MEMS device layer on an active device layer and devices formed thereby
    6.
    发明授权
    Methods for forming a MEMS device layer on an active device layer and devices formed thereby 有权

    公开(公告)号：US11180366B2

    公开(公告)日：2021-11-23

    申请号：US16827251

    申请日：2020-03-23

    申请人： General Electric Company

    发明人： Marco Francesco Aimi ,  Joleyn Eileen Brewer

    IPC分类号： B81C1/00

    摘要： A method includes obtaining an active device layer. The active device layer has a first surface with one or more active feature areas. First portions of the active feature areas are exposed, and second portions of the active feature areas are covered by an insulating layer. A conformal overcoat layer is formed on the first surface. A base of a microelectromechanical systems (MEMS) device layer is formed on the conformal overcoat layer. The MEMS device layer is spatially segregated from the active feature areas by removing portions of the base of the MEMS device layer in one or more antiparasitic regions (APRs) that correspond to the active feature areas. Metal MEMS features are formed on the base of the MEMS device layer. Selected portions of the active feature areas are exposed removing portions of the conformal overcoat layer that overlay the active feature areas.

    METHODS FOR FORMING A MEMS DEVICE LAYER ON AN ACTIVE DEVICE LAYER AND DEVICES FORMED THEREBY
    7.
    发明申请
    METHODS FOR FORMING A MEMS DEVICE LAYER ON AN ACTIVE DEVICE LAYER AND DEVICES FORMED THEREBY 有权

    公开(公告)号：US20210292161A1

    公开(公告)日：2021-09-23

    申请号：US16827251

    申请日：2020-03-23

    申请人： General Electric Company

    发明人： Marco Francesco Aimi ,  Joleyn Eileen Brewer

    IPC分类号： B81C1/00

    摘要： A method includes obtaining an active device layer. The active device layer has a first surface with one or more active feature areas. First portions of the active feature areas are exposed, and second portions of the active feature areas are covered by an insulating layer. A conformal overcoat layer is formed on the first surface. A base of a microelectromechanical systems (MEMS) device layer is formed on the conformal overcoat layer. The MEMS device layer is spatially segregated from the active feature areas by removing portions of the base of the MEMS device layer in one or more antiparasitic regions (APRs) that correspond to the active feature areas. Metal MEMS features are formed on the base of the MEMS device layer. Selected portions of the active feature areas are exposed removing portions of the conformal overcoat layer that overlay the active feature areas.

    True time delay beam former and method of operation
    9.
    发明授权
    True time delay beam former and method of operation 有权

    公开(公告)号：US10211902B1

    公开(公告)日：2019-02-19

    申请号：US15782969

    申请日：2017-10-13

    申请人： General Electric Company

    发明人： Joseph Alfred Iannotti ,  Marco Francesco Aimi

    IPC分类号： H04L1/02 ,  H04B7/06 ,  H01Q3/26 ,  H04B7/08

    摘要： An antenna system includes a plurality of true time delay (TTD) modules, each having a plurality of switching elements configured to selectively define alternative RF signal transmission paths between a signal input and a signal output of the TTD module. A controller is programmed to control the plurality of TTD modules to steer a beam according to a make-before-break switching technique by closing a first pair of switching elements within at least a subset of the plurality of TTD modules to activate a first RF signal transmission path; closing a second pair of switching elements of the subset of the plurality of TTD modules to activate a second RF signal transmission path in parallel with the first RF transmission path; and opening the first pair of switching elements of the subset of TTD modules after closing the second pair of switching elements.