公开(公告)号：US20150364674A1

公开(公告)日：2015-12-17

申请号：US14835371

申请日：2015-08-25

申请人： FUJIFILM Corporation

发明人： Tsutomu SASAKI ,  Masayuki SUZUKI

IPC分类号： H01L41/187 ,  C30B7/10 ,  C30B29/32 ,  H01L41/18

CPC分类号： H01L41/1876 ,  C01G25/006 ,  C01P2004/03 ,  C01P2004/61 ,  C01P2004/62 ,  C04B35/491 ,  C04B2235/52 ,  C04B2235/522 ,  C04B2235/5252 ,  C04B2235/5436 ,  C04B2235/5445 ,  C30B7/10 ,  C30B28/04 ,  C30B29/32 ,  C30B29/60 ,  H01L41/183 ,  H01L41/39 ,  Y10T428/2982

摘要： The present invention provides oxide particles having a compositional formula of Pb(ZrxTi1-x)O3, wherein x is 0.46≦x≦0.6; wherein a size of the particle is from 0.5 to 10 μm; a porosity of a surface of the particle is 20% or less; and a shape of the particle is any one of a cube, a rectangular parallelepiped, or a truncated octahedron.

摘要翻译： 本发明提供具有Pb（Zr x Ti 1-x）O 3的组成式的氧化物颗粒，其中x为0.46＆lt; lE; x＆lt; lE; 0.6; 其中所述颗粒的尺寸为0.5至10μm; 颗粒表面的孔隙率为20％以下; 并且该颗粒的形状是立方体，长方体或截头八面体中的任何一种。

公开(公告)号：US20150103977A1

公开(公告)日：2015-04-16

申请号：US14571293

申请日：2014-12-16

申请人： FUJIFILM CORPORATION

发明人： Masashi ONO ,  Masahiro TAKATA ,  Toshiya IDEUE ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L21/02 ,  G01N23/04 ,  G01T1/24 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/02628 ,  G01N23/04 ,  G01T1/24 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L27/1225 ,  H01L27/1292 ,  H01L27/14632 ,  H01L27/14676 ,  H01L29/263 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L31/032

摘要： A method of producing a thin film transistor includes: forming a gate electrode; forming a gate insulating film that contacts the gate electrode; forming, by a liquid phase method, an oxide semiconductor layer arranged facing the gate electrode with the gate insulating film provided therebetween, the oxide semiconductor layer including a first region and a second region, the first region being represented by In(a)Ga(b)Zn(c)O(d), the second region being represented by In(e)Ga(f)Zn(g)O(h), and the second region being located farther from the gate electrode than the first region; and forming a source electrode and a drain electrode that are arranged apart from each other and are capable of being conductively connected through the oxide semiconductor layer.

摘要翻译： 制造薄膜晶体管的方法包括：形成栅电极; 形成与所述栅电极接触的栅极绝缘膜; 通过液相法形成面对栅极电极的氧化物半导体层，其间设置有栅极绝缘膜，所述氧化物半导体层包括第一区域和第二区域，所述第一区域由In（a）Ga（ b）Zn（c）O（d），第二区域由In（e）Ga（f）Zn（g）O（h）表示，第二区域位于比第一区域更远离栅电极的位置; 并且形成彼此分离并能够通过氧化物半导体层导电连接的源电极和漏电极。

公开(公告)号：US20180138267A1

公开(公告)日：2018-05-17

申请号：US15850637

申请日：2017-12-21

申请人： FUJIFILM Corporation

发明人： Masashi ONO ,  Makoto KIKUCHI ,  Atsushi TANAKA ,  Masayuki SUZUKI ,  Yoshihiko KANEMITSU

IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/0392 ,  H01L31/0352 ,  H01L33/26 ,  H01L33/06 ,  H01L29/24 ,  H01L29/12 ,  B82Y10/00 ,  H01L29/786 ,  H01L31/032 ,  B82Y30/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/125 ,  H01L29/24 ,  H01L29/78696 ,  H01L31/032 ,  H01L31/035218 ,  H01L31/0392 ,  H01L31/072 ,  H01L33/06 ,  H01L33/26 ,  H01L51/502 ,  Y02E10/50

摘要： A semiconductor film includes a cluster of semiconductor quantum dots each having a metal atom and ligands coordinating to respective semiconductor quantum dots, and the semiconductor quantum dots have an average shortest inter-dot distance of less than 0.45 nm. A solar cell, a light-emitting diode, a thin film transistor, and an electronic device include the semiconductor film.

公开(公告)号：US20160225859A1

公开(公告)日：2016-08-04

申请号：US15095168

申请日：2016-04-11

申请人： FUJIFILM CORPORATION

发明人： Masahiro TAKATA ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L29/24 ,  H01L29/786

CPC分类号： H01L29/24 ,  H01L27/1225 ,  H01L27/14658 ,  H01L29/7869

摘要： Provided are a metal oxide semiconductor film and a device including the same, the metal oxide semiconductor film including at least indium as a metal component, in which when an indium concentration in the metal oxide semiconductor film is represented by DI (atoms/cm3), and when a hydrogen concentration in the metal oxide semiconductor film is represented by DH (atoms/cm3), the following relational expression (1) is satisfied: 0.1≦DH/DI≦1.8  (1).

摘要翻译： 提供一种金属氧化物半导体膜及其制造方法，其中，金属氧化物半导体膜至少包含作为金属成分的铟，当金属氧化物半导体膜中的铟浓度以DI（原子/ cm 3）表示时， 当金属氧化物半导体膜中的氢浓度以DH（原子/ cm 3）表示时，满足以下关系式（1）：0.1≤DH/DI≤1.8（1）。

公开(公告)号：US20150318421A1

公开(公告)日：2015-11-05

申请号：US14746114

申请日：2015-06-22

申请人： FUJIFILM CORPORATION

发明人： Masashi ONO ,  Makoto KIKUCHI ,  Atsushi TANAKA ,  Masayuki SUZUKI ,  Yoshihiko KANEMITSU

IPC分类号： H01L31/0352 ,  H01L31/0384 ,  H01L31/032 ,  H01L29/24 ,  H01L33/26 ,  H01L29/66 ,  H01L21/02 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L29/786 ,  H01L29/12

摘要： A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and a ligand that is coordinated to the semiconductor quantum dots and that is represented by the following Formula (A): wherein, in Formula (A), X1 represents NH, S, or O; each of X2 and X3 independently represents NH2, SH, or OH; and each of n and m independently represents an integer from 1 to 3.

摘要翻译： 一种半导体膜，包括：包含金属原子的半导体量子点的组件; 和与下述式（A）表示的配体相配合的配体：式（A）中，X 1表示NH，S或O; X2和X3各自独立地表示NH2，SH或OH; n和m各自独立地表示1〜3的整数。

公开(公告)号：US20150295035A1

公开(公告)日：2015-10-15

申请号：US14726827

申请日：2015-06-01

申请人： FUJIFILM CORPORATION

发明人： Masashi ONO ,  Makoto KIKUCHI ,  Atsushi TANAKA ,  Masayuki SUZUKI ,  Yoshihiko KANEMITSU

IPC分类号： H01L29/06 ,  H01L29/786 ,  H01L31/0352 ,  H01L33/26 ,  H01L31/032 ,  H01L29/24 ,  H01L33/06

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/125 ,  H01L29/24 ,  H01L29/78696 ,  H01L31/032 ,  H01L31/035218 ,  H01L31/0392 ,  H01L31/072 ,  H01L33/06 ,  H01L33/26 ,  H01L51/502 ,  Y02E10/50

摘要： A semiconductor film includes a cluster of semiconductor quantum dots each having a metal atom and ligands coordinating to respective semiconductor quantum dots, and the semiconductor quantum dots have an average shortest inter-dot distance of less than 0.45 nm. A solar cell, a light-emitting diode, a thin film transistor, and an electronic device include the semiconductor film.

摘要翻译： 半导体膜包括各自具有与各半导体量子点配位的金属原子和配体的半导体量子点簇，半导体量子点的平均最短点间距离小于0.45nm。 太阳能电池，发光二极管，薄膜晶体管和电子器件包括半导体膜。

公开(公告)号：US20150287878A1

公开(公告)日：2015-10-08

申请号：US14746103

申请日：2015-06-22

申请人： FUJIFILM Corporation

发明人： Masashi ONO ,  Makoto KIKUCHI ,  Atsushi TANAKA ,  Masayuki SUZUKI ,  Yoshihiko KANEMITSU

IPC分类号： H01L33/06 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/032 ,  H01L29/24 ,  H01L33/30 ,  H01L29/786 ,  H01L29/66 ,  H01L29/06 ,  H01L29/201 ,  H01L31/18 ,  H01L33/00

CPC分类号： H01L33/06 ,  H01L29/0665 ,  H01L29/201 ,  H01L29/245 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78681 ,  H01L31/0304 ,  H01L31/0324 ,  H01L31/035218 ,  H01L31/18 ,  H01L31/184 ,  H01L33/0062 ,  H01L33/0091 ,  H01L33/30 ,  H01L33/44 ,  H01L51/502

摘要： A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; a thiocyanate ion coordinated to the semiconductor quantum dots; and a metal ion.

摘要翻译： 一种半导体膜，包括：包含金属原子的半导体量子点的组件; 与半导体量子点配位的硫氰酸根离子; 和金属离子。

公开(公告)号：US20150236178A1

公开(公告)日：2015-08-20

申请号：US14699817

申请日：2015-04-29

申请人： FUJIFILM Corporation

发明人： Masashi ONO ,  Makoto KIKUCHI ,  Atsushi TANAKA ,  Masayuki SUZUKI ,  Yoshihiko KANEMITSU

IPC分类号： H01L31/0352 ,  H01L31/0304 ,  H01L31/032 ,  H01L33/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/26 ,  H01L29/786 ,  H01L29/06 ,  H01L29/12 ,  H01L29/66 ,  H01L21/02 ,  C07F7/24 ,  C07F9/06 ,  H01L31/18

CPC分类号： H01L31/035218 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C07F7/24 ,  C07F9/06 ,  H01L21/02422 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L29/0665 ,  H01L29/122 ,  H01L29/127 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0304 ,  H01L31/03044 ,  H01L31/0324 ,  H01L31/072 ,  H01L31/18 ,  H01L31/184 ,  H01L31/1856 ,  H01L33/0062 ,  H01L33/0075 ,  H01L33/0091 ,  H01L33/06 ,  H01L33/26 ,  H01L33/30 ,  H01L33/32 ,  Y02E10/544 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S977/774 ,  Y10T428/249921 ,  Y10T428/268

摘要： A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and at least one ligand that is coordinated to the semiconductor quantum dots and that is selected from a ligand represented by Formula (A), a ligand represented by Formula (B), and a ligand represented by Formula (C): wherein, in Formula (A), X1 represents —SH, —NH2, or —OH; and each of A1 and B1 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; provided that when A1 and B1 are both hydrogen atoms, X1 represents —SH or —OH; in Formula (B), X2 represents —SH, —NH2, or —OH; and each of A2 and B2 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; and in Formula (C), A3 represents a hydrogen atom or a substituent having from 1 to 10 atoms.

摘要翻译： 一种半导体膜，包括：包含金属原子的半导体量子点的组件; 和与半导体量子点配位的至少一种配体，其选自由式（A）表示的配体，式（B）表示的配体和由式（C）表示的配位体：其中，在式 （A）中，X 1表示-SH，-NH 2或-OH; A1和B1各自独立地表示氢原子或具有1至10个原子的取代基; 条件是当A1和B1都是氢原子时，X1表示-SH或-OH; 在式（B）中，X 2表示-SH，-NH 2或-OH; A2和B2各自独立地表示氢原子或具有1至10个原子的取代基; 在式（C）中，A3表示氢原子或具有1〜10个原子的取代基。

公开(公告)号：US20160005879A1

公开(公告)日：2016-01-07

申请号：US14856047

申请日：2015-09-16

申请人： FUJIFILM Corporation

发明人： Masahiro TAKATA ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L29/786 ,  C01G15/00 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/7869 ,  C01G15/00 ,  C01G15/006 ,  C01P2002/74 ,  C01P2006/40 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02628 ,  H01L21/02664 ,  H01L29/24 ,  H01L29/66969

摘要： Provided is a metal oxide film, including a component having a peak position, in an XPS spectrum thereof, within a range corresponding to a binding energy of from 402 eV to 405 eV, the metal oxide film satisfying a relationship represented by Equation (1): A/(A+B)≧0.39, when an intensity of peak energy attributed to nitrogen 1s electron is obtained by peak separation, and a manufacturing method of the same, an oxide semiconductor film, a thin-film transistor, a display apparatus, an image sensor, and an X-ray sensor. In Equation (1), A represents a peak area of the component having a peak position within a range corresponding to a binding energy of from 402 eV to 405 eV, and B represents a peak area of a component having a peak position within a range corresponding to a binding energy of from 406 eV to 408 eV.

摘要翻译： 本发明提供一种金属氧化物膜，其特征在于，具有在XPS光谱中具有峰值位置的成分在与402eV〜405eV的结合能对应的范围内，所述金属氧化物膜满足由式（1）表示的关系， ：A /（A + B）≥0.39，当通过峰值分离获得归因于氮1s电子的峰值能量的强度时，其制造方法，氧化物半导体膜，薄膜晶体管，显示装置 ，图像传感器和X射线传感器。 在式（1）中，A表示在与402eV〜405eV的结合能对应的范围内具有峰值位置的成分的峰面积，B表示峰值位置在一定范围内的成分的峰面积 对应于从406eV到408eV的结合能。

公开(公告)号：US20140131696A1

公开(公告)日：2014-05-15

申请号：US14160730

申请日：2014-01-22

申请人： FUJIFILM Corporation

发明人： Masashi ONO ,  Masahiro TAKATA ,  Fumihiko MOCHIZUKI ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L29/66 ,  H01L27/15 ,  H01L21/02 ,  H01L27/146 ,  H01L29/786 ,  H01L27/32

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14632 ,  H01L27/14659 ,  H01L27/14687 ,  H01L27/148 ,  H01L27/156 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/7869 ,  H01L29/78696

摘要： There is provided a method of fabricating a field effect transistor including: forming a first oxide semiconductor film on a gate insulation layer disposed on a gate electrode; forming a second oxide semiconductor film on the first oxide semiconductor film, the second oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment at over 300° C. in an oxidizing atmosphere; forming a third oxide semiconductor film on the second oxide semiconductor film, the third oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a source electrode and a drain electrode on the third oxide semiconductor film.

摘要翻译： 提供一种制造场效应晶体管的方法，包括：在设置在栅电极上的栅极绝缘层上形成第一氧化物半导体膜; 在所述第一氧化物半导体膜上形成第二氧化物半导体膜，所述第二氧化物半导体膜与所述第一氧化物半导体膜的阳离子组成不同，导电性低于所述第一氧化物半导体膜; 在氧化气氛中在300℃以上进行热处理; 在所述第二氧化物半导体膜上形成第三氧化物半导体膜，所述第三氧化物半导体膜的阳离子组成与所述第一氧化物半导体膜不同，导电率低于所述第一氧化物半导体膜; 在氧化气氛中进行热处理; 以及在所述第三氧化物半导体膜上形成源电极和漏电极。