发明申请
US20160225859A1 METAL OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, DISPLAY APPARATUS, IMAGE SENSOR, AND X-RAY SENSOR
审中-公开
金属氧化物半导体膜，薄膜晶体管，显示设备，图像传感器和X射线传感器
- 专利标题： METAL OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, DISPLAY APPARATUS, IMAGE SENSOR, AND X-RAY SENSOR
- 专利标题（中）： 金属氧化物半导体膜，薄膜晶体管，显示设备，图像传感器和X射线传感器
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申请号： US15095168申请日： 2016-04-11
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公开(公告)号： US20160225859A1公开(公告)日： 2016-08-04
- 发明人: Masahiro TAKATA , Atsushi TANAKA , Masayuki SUZUKI
- 申请人： FUJIFILM CORPORATION
- 优先权： JP2013-253191 20131206
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L29/786
摘要：
Provided are a metal oxide semiconductor film and a device including the same, the metal oxide semiconductor film including at least indium as a metal component, in which when an indium concentration in the metal oxide semiconductor film is represented by DI (atoms/cm3), and when a hydrogen concentration in the metal oxide semiconductor film is represented by DH (atoms/cm3), the following relational expression (1) is satisfied: 0.1≦DH/DI≦1.8 (1).
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