公开(公告)号：US20230400715A1

公开(公告)日：2023-12-14

申请号：US18456531

申请日：2023-08-28

申请人： FUJIFILM Corporation

发明人： Masashi ONO ,  Masahiro TAKATA

IPC分类号： G02F1/015

CPC分类号： G02F1/015 ,  G02F2201/12

摘要： Provided are an optical modulation element including a substrate 11; an electrode layer 12 provided on the substrate 11; a dielectric layer 13 provided on the electrode layer 12; and a light absorbing layer 14 provided on the dielectric layer 13 and including inorganic nanoparticles, in which the inorganic nanoparticles exhibit localized surface plasmon resonance by light irradiation, an optical shutter including the optical modulation element, and an optical modulation method including dynamically modulating reflected light or transmitted light of light incident into the optical modulation element by changing a voltage to be applied to the light absorbing layer of the optical modulation element.

公开(公告)号：US20150103977A1

公开(公告)日：2015-04-16

申请号：US14571293

申请日：2014-12-16

申请人： FUJIFILM CORPORATION

发明人： Masashi ONO ,  Masahiro TAKATA ,  Toshiya IDEUE ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L21/02 ,  G01N23/04 ,  G01T1/24 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/02628 ,  G01N23/04 ,  G01T1/24 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L27/1225 ,  H01L27/1292 ,  H01L27/14632 ,  H01L27/14676 ,  H01L29/263 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L31/032

摘要： A method of producing a thin film transistor includes: forming a gate electrode; forming a gate insulating film that contacts the gate electrode; forming, by a liquid phase method, an oxide semiconductor layer arranged facing the gate electrode with the gate insulating film provided therebetween, the oxide semiconductor layer including a first region and a second region, the first region being represented by In(a)Ga(b)Zn(c)O(d), the second region being represented by In(e)Ga(f)Zn(g)O(h), and the second region being located farther from the gate electrode than the first region; and forming a source electrode and a drain electrode that are arranged apart from each other and are capable of being conductively connected through the oxide semiconductor layer.

摘要翻译： 制造薄膜晶体管的方法包括：形成栅电极; 形成与所述栅电极接触的栅极绝缘膜; 通过液相法形成面对栅极电极的氧化物半导体层，其间设置有栅极绝缘膜，所述氧化物半导体层包括第一区域和第二区域，所述第一区域由In（a）Ga（ b）Zn（c）O（d），第二区域由In（e）Ga（f）Zn（g）O（h）表示，第二区域位于比第一区域更远离栅电极的位置; 并且形成彼此分离并能够通过氧化物半导体层导电连接的源电极和漏电极。

公开(公告)号：US20220298348A1

公开(公告)日：2022-09-22

申请号：US17668351

申请日：2022-02-09

申请人： FUJIFILM Corporation

发明人： Masahiro TAKATA ,  Masashi ONO ,  Naozumi SHIRAIWA

IPC分类号： C08L33/08 ,  C08K3/22 ,  G02B1/04 ,  G02B1/111 ,  G02B1/14

摘要： Provide are a curable resin composition containing ITO particles, in which a cured product obtained from the curable resin composition can exhibit high transmittance over a visible light to shortwave infrared wavelength region while maintaining a wavelength dependence of a desired refractive index; a cured product formed of the curable resin composition; and a diffractive optical element and a multilayer diffractive optical element.
A curable resin composition includes particles which have a core-shell structure, in which a core portion is composed of indium tin oxide, a monofunctional or higher (meth)acrylate compound, and a dispersant; a cured product formed of the curable resin composition; and a diffractive optical element and a multilayer diffractive optical element.

公开(公告)号：US20220115611A1

公开(公告)日：2022-04-14

申请号：US17555528

申请日：2021-12-20

申请人： FUJIFILM Corporation

发明人： Masahiro TAKATA ,  Masashi ONO ,  Shunsuke KITAJIMA

IPC分类号： H01L51/44 ,  H01L27/30 ,  H01L51/42 ,  C09K11/02 ,  C09K11/66 ,  C01G21/21

摘要： A photodetector element contains aggregates of PbS quantum dots and a ligand that is coordinated to the PbS quantum dot, in which the PbS quantum dot contains 1.75 mol or more and 1.95 mol or less of a Pb atom with respect to 1 mol of a S atom.

公开(公告)号：US20220115610A1

公开(公告)日：2022-04-14

申请号：US17555519

申请日：2021-12-20

申请人： FUJIFILM Corporation

发明人： Masahiro TAKATA ,  Masashi ONO ,  Shunsuke KITAJIMA

IPC分类号： H01L51/42 ,  H01L27/30 ,  C09K11/66 ,  C09K11/02

摘要： A photodetector element contains aggregates of PbS quantum dots and a ligand that is coordinated to the PbS quantum dot, in which the PbS quantum dot contains more than 0 mol and 1.40 mol or less of a Pb atom with respect to 1 mol of a S atom.

公开(公告)号：US20210363026A1

公开(公告)日：2021-11-25

申请号：US17317927

申请日：2021-05-12

申请人： FUJIFILM CORPORATION

发明人： Masahiro TAKATA

IPC分类号： C01G19/02 ,  C08F2/44 ,  C08F2/46 ,  C08F20/14 ,  C08K3/22 ,  G02B1/04

摘要： Provided are an indium tin oxide particle which has absorption in the near infrared region at a wavelength of 1800 nm or less, has high dispersibility, and has good plasmon resonance absorption; an indium tin oxide particle dispersion; a curable composition; an optical member; a lens unit; a method for producing indium tin oxide particles; and a method for producing a curable composition. Provided are an indium tin oxide particle, in which, in an X-ray photoelectron spectroscopy spectrum, an oxygen amount OA attributed to a peak having a peak top at a position of 530.0±0.5 eV and an oxygen amount OB attributed to a peak having a peak top at a position of 531.5±0.5 eV satisfy the following expression 1; a curable composition; and applications thereof. OA/OB>1.4:  Expression 1

公开(公告)号：US20160225859A1

公开(公告)日：2016-08-04

申请号：US15095168

申请日：2016-04-11

申请人： FUJIFILM CORPORATION

发明人： Masahiro TAKATA ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L29/24 ,  H01L29/786

CPC分类号： H01L29/24 ,  H01L27/1225 ,  H01L27/14658 ,  H01L29/7869

摘要： Provided are a metal oxide semiconductor film and a device including the same, the metal oxide semiconductor film including at least indium as a metal component, in which when an indium concentration in the metal oxide semiconductor film is represented by DI (atoms/cm3), and when a hydrogen concentration in the metal oxide semiconductor film is represented by DH (atoms/cm3), the following relational expression (1) is satisfied: 0.1≦DH/DI≦1.8  (1).

摘要翻译： 提供一种金属氧化物半导体膜及其制造方法，其中，金属氧化物半导体膜至少包含作为金属成分的铟，当金属氧化物半导体膜中的铟浓度以DI（原子/ cm 3）表示时， 当金属氧化物半导体膜中的氢浓度以DH（原子/ cm 3）表示时，满足以下关系式（1）：0.1≤DH/DI≤1.8（1）。

公开(公告)号：US20230322981A1

公开(公告)日：2023-10-12

申请号：US18148031

申请日：2022-12-29

申请人： FUJIFILM Corporation

发明人： Masahiro TAKATA ,  Masashi ONO ,  Naozumi SHIRAIWA

IPC分类号： C08F120/12 ,  C08K3/22

CPC分类号： C08F120/12 ,  C08K3/22 ,  C08K2003/2213 ,  C08K2003/2231

摘要： An object of the present invention is to provide a cured product which is suitable as a material for a layer of low refractive index in a multilayer diffractive optical element, can exhibit a desired chromatic aberration reducing effect over a near-infrared wavelength region to a shortwave infrared wavelength region in a case of being used in the multilayer diffractive optical element, and can exhibit high transmittance in this wavelength range; a curable resin composition suitable for obtaining this cured product; and a diffractive optical element and a multilayer diffractive optical element including this cured product. Provided are a curable resin composition which includes oxide nanoparticles including indium and cerium, a monofunctional or higher functional (meth)acrylate compound, and a dispersant; a cured product formed of the curable resin composition; a diffractive optical element and a multilayer diffractive optical element; and oxide nanoparticles used in this composition.

公开(公告)号：US20200165438A1

公开(公告)日：2020-05-28

申请号：US16777160

申请日：2020-01-30

申请人： FUJIFILM Corporation

发明人： Masashi ONO ,  Masahiro TAKATA ,  Takeharu TANI

IPC分类号： C08L33/10 ,  C08F20/06 ,  C08K5/57 ,  C08F2/50

摘要： Provided is a curable composition including oxide particles that include at least indium and tin, and to which a ligand having a hydrocarbon group and a binding site to the oxide particles is bonded; and a polymerizable compound, in which a content of the oxide particles in the composition is 18 mass % or more with respect to a total solid content of the composition; and a cured product of the curable composition or a lens unit including the cured product.

公开(公告)号：US20160118253A1

公开(公告)日：2016-04-28

申请号：US14989059

申请日：2016-01-06

申请人： FUJIFILM Corporation

发明人： Masahiro TAKATA ,  Makoto KIKUCHI ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

CPC分类号： H01L21/02565 ,  G02F2001/13685 ,  H01L21/02554 ,  H01L21/02628 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869

摘要： A metal oxide thin film according to the present invention has a peak which is attributed to 1s electrons of nitrogen in a binding energy range of 402 eV to 405 eV in an XPS spectrum obtained by X-ray photoelectron spectroscopy, in which peak areas, which are obtained by separation of peaks having a peak energy of a metal-oxygen bond attributed to 1s electrons of oxygen, satisfy the following expression. 0.9

摘要翻译： 根据本发明的金属氧化物薄膜具有归属于在通过X射线光电子能谱法获得的XPS光谱中在402eV至405eV的结合能范围内的氮的1s电子的峰，其中峰面积 通过分离具有归属于1个电子的氧的金属 - 氧键的峰值的峰而获得，满足以下表达式。 0.9