公开(公告)号：US20150103977A1

公开(公告)日：2015-04-16

申请号：US14571293

申请日：2014-12-16

申请人： FUJIFILM CORPORATION

发明人： Masashi ONO ,  Masahiro TAKATA ,  Toshiya IDEUE ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L21/02 ,  G01N23/04 ,  G01T1/24 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/02628 ,  G01N23/04 ,  G01T1/24 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L27/1225 ,  H01L27/1292 ,  H01L27/14632 ,  H01L27/14676 ,  H01L29/263 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L31/032

摘要： A method of producing a thin film transistor includes: forming a gate electrode; forming a gate insulating film that contacts the gate electrode; forming, by a liquid phase method, an oxide semiconductor layer arranged facing the gate electrode with the gate insulating film provided therebetween, the oxide semiconductor layer including a first region and a second region, the first region being represented by In(a)Ga(b)Zn(c)O(d), the second region being represented by In(e)Ga(f)Zn(g)O(h), and the second region being located farther from the gate electrode than the first region; and forming a source electrode and a drain electrode that are arranged apart from each other and are capable of being conductively connected through the oxide semiconductor layer.

摘要翻译： 制造薄膜晶体管的方法包括：形成栅电极; 形成与所述栅电极接触的栅极绝缘膜; 通过液相法形成面对栅极电极的氧化物半导体层，其间设置有栅极绝缘膜，所述氧化物半导体层包括第一区域和第二区域，所述第一区域由In（a）Ga（ b）Zn（c）O（d），第二区域由In（e）Ga（f）Zn（g）O（h）表示，第二区域位于比第一区域更远离栅电极的位置; 并且形成彼此分离并能够通过氧化物半导体层导电连接的源电极和漏电极。

公开(公告)号：US20140103341A1

公开(公告)日：2014-04-17

申请号：US14104714

申请日：2013-12-12

申请人： FUJIFILM CORPORATION

发明人： Kenichi UMEDA ,  Atsushi TANAKA ,  Masayuki SUZUKI ,  Tatsuya SHIMODA

IPC分类号： H01L21/02 ,  H01L21/66 ,  H01L29/786

CPC分类号： H01L21/02565 ,  H01L21/02554 ,  H01L21/02592 ,  H01L21/02628 ,  H01L22/10 ,  H01L27/14687 ,  H01L27/14698 ,  H01L29/78693 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for producing an amorphous oxide thin film includes: a pre-treatment process of selectively changing a binding state of an organic component, at a temperature lower than a pyrolysis temperature of the organic component, in a first oxide precursor film containing the organic component and In, to obtain a second oxide precursor film in which, when an infrared wave number range of from 1380 cm−1 to 1520 cm−1 in an infrared absorption spectrum obtained by performing a measurement by Fourier transform infrared spectroscopy is divided into an infrared wave number range of from 1380 cm−1 to 1450 cm−1 and an infrared wave number range of from more than 1450 cm−1 to 1520 cm−1, a peak positioned within the infrared wave number range of from 1380 cm−1 to 1450 cm−1 exhibits the maximum value in the infrared absorption spectrum within an infrared wave number range of from 1350 cm−1 to 1750 cm−1; and a post-treatment process of removing the organic component remaining in the second oxide precursor film, to transform the second oxide precursor film into an amorphous oxide thin film containing In.

摘要翻译： 无定形氧化物薄膜的制造方法包括：在含有有机成分的第一氧化物前体膜中，在低于有机成分的热解温度的温度下选择性地改变有机成分的结合状态的预处理工序 和In，以获得第二氧化物前体膜，其中当通过利用傅立叶变换红外光谱进行测量而获得的红外吸收光谱中的1380cm -1至1520cm -1的红外波数范围被分为红外 波数范围为1380cm -1至1450cm -1，红外波数范围为1450cm -1以上1520cm -1以上，红外波数范围为1380cm -1〜 1450cm -1表现出红外吸收光谱的最大值，红外波数范围为1350cm-1至1750cm -1; 以及去除残留在第二氧化物前体膜中的有机成分的后处理工艺，将第二氧化物前体膜转变为含有In的无定形氧化物薄膜。

公开(公告)号：US20130328045A1

公开(公告)日：2013-12-12

申请号：US13967065

申请日：2013-08-14

申请人： FUJIFILM Corporation

发明人： Masahiro TAKATA ,  Atsushi TANAKA

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/7869 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/14658 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78696

摘要： A field effect transistor including: a gate insulating film; an oxide semiconductor layer that serves as an active layer and whose main structural elements are Sn, Zn and O, or Sn, Ga, Zn and O; and an oxide intermediate layer that is disposed between the gate insulating film and the oxide semiconductor layer, and whose resistivity is higher than that of the oxide semiconductor layer.

摘要翻译： 一种场效应晶体管，包括：栅极绝缘膜; 用作有源层并且其主要结构元素是Sn，Zn和O或Sn，Ga，Zn和O的氧化物半导体层; 以及设置在栅极绝缘膜和氧化物半导体层之间并且电阻率高于氧化物半导体层的电阻率的氧化物中间层。

公开(公告)号：US20130320338A1

公开(公告)日：2013-12-05

申请号：US13963061

申请日：2013-08-09

申请人： FUJIFILM Corporation

发明人： Masashi ONO ,  Masahiro TAKATA ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L29/66 ,  H01L29/786

CPC分类号： H01L29/66969 ,  C23C14/08 ,  C23C14/3464 ,  C23C14/5806 ,  C23C14/5853 ,  G02F1/133305 ,  G02F2001/13685 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/14612 ,  H01L27/14658 ,  H01L27/14692 ,  H01L29/78693

摘要： A method of fabricating a thin-film transistor, the method including: film-forming an active layer, that contains as a main component thereof an oxide semiconductor structured by O and at least two elements among In, Ga and Zn, in a film formation chamber into which at least oxygen is introduced, and b) heat treating the active layer at less than 300° C. in a dry atmosphere, wherein the film-forming a) and the heat treating are carried out such that, given that an oxygen partial pressure with respect to an entire pressure of an atmosphere within the film formation chamber in the film-forming is PO2depo (%), and an oxygen partial pressure with respect to an entire pressure of an atmosphere during the heat treating is PO2anneal (%), the oxygen partial pressure PO2anneal (%) at the time of the heat treating b) satisfies a relationship: −20/3PO2depo+40/3≦PO2anneal≦−800/43PO2depo+5900/43.

摘要翻译： 一种制造薄膜晶体管的方法，所述方法包括：成膜有源层，其以膜形成方式包含由O构成的氧化物半导体和In，Ga和Zn中的至少两种元素作为其主要成分 至少引入氧的室，以及b）在干燥气氛中在低于300℃下热处理活性层，其中成膜a）和热处理进行，使得如果氧气 相对于膜成膜室内的气氛的全部压力，成膜时的分压为PO2depo（％），相对于热处理时的气氛的整个压力的氧分压为PO 2·去甲（％） ，热处理时的氧分压PO 2·去ann（％）b）满足关系：-20 / 3PO2depo + 40/3 @ PO2anneal @ -800 / 43PO2depo + 5900/43。

公开(公告)号：US20180138267A1

公开(公告)日：2018-05-17

申请号：US15850637

申请日：2017-12-21

申请人： FUJIFILM Corporation

发明人： Masashi ONO ,  Makoto KIKUCHI ,  Atsushi TANAKA ,  Masayuki SUZUKI ,  Yoshihiko KANEMITSU

IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/0392 ,  H01L31/0352 ,  H01L33/26 ,  H01L33/06 ,  H01L29/24 ,  H01L29/12 ,  B82Y10/00 ,  H01L29/786 ,  H01L31/032 ,  B82Y30/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/125 ,  H01L29/24 ,  H01L29/78696 ,  H01L31/032 ,  H01L31/035218 ,  H01L31/0392 ,  H01L31/072 ,  H01L33/06 ,  H01L33/26 ,  H01L51/502 ,  Y02E10/50

摘要： A semiconductor film includes a cluster of semiconductor quantum dots each having a metal atom and ligands coordinating to respective semiconductor quantum dots, and the semiconductor quantum dots have an average shortest inter-dot distance of less than 0.45 nm. A solar cell, a light-emitting diode, a thin film transistor, and an electronic device include the semiconductor film.

公开(公告)号：US20160225859A1

公开(公告)日：2016-08-04

申请号：US15095168

申请日：2016-04-11

申请人： FUJIFILM CORPORATION

发明人： Masahiro TAKATA ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L29/24 ,  H01L29/786

CPC分类号： H01L29/24 ,  H01L27/1225 ,  H01L27/14658 ,  H01L29/7869

摘要： Provided are a metal oxide semiconductor film and a device including the same, the metal oxide semiconductor film including at least indium as a metal component, in which when an indium concentration in the metal oxide semiconductor film is represented by DI (atoms/cm3), and when a hydrogen concentration in the metal oxide semiconductor film is represented by DH (atoms/cm3), the following relational expression (1) is satisfied: 0.1≦DH/DI≦1.8  (1).

摘要翻译： 提供一种金属氧化物半导体膜及其制造方法，其中，金属氧化物半导体膜至少包含作为金属成分的铟，当金属氧化物半导体膜中的铟浓度以DI（原子/ cm 3）表示时， 当金属氧化物半导体膜中的氢浓度以DH（原子/ cm 3）表示时，满足以下关系式（1）：0.1≤DH/DI≤1.8（1）。

公开(公告)号：US20150318421A1

公开(公告)日：2015-11-05

申请号：US14746114

申请日：2015-06-22

申请人： FUJIFILM CORPORATION

发明人： Masashi ONO ,  Makoto KIKUCHI ,  Atsushi TANAKA ,  Masayuki SUZUKI ,  Yoshihiko KANEMITSU

IPC分类号： H01L31/0352 ,  H01L31/0384 ,  H01L31/032 ,  H01L29/24 ,  H01L33/26 ,  H01L29/66 ,  H01L21/02 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L29/786 ,  H01L29/12

摘要： A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and a ligand that is coordinated to the semiconductor quantum dots and that is represented by the following Formula (A): wherein, in Formula (A), X1 represents NH, S, or O; each of X2 and X3 independently represents NH2, SH, or OH; and each of n and m independently represents an integer from 1 to 3.

摘要翻译： 一种半导体膜，包括：包含金属原子的半导体量子点的组件; 和与下述式（A）表示的配体相配合的配体：式（A）中，X 1表示NH，S或O; X2和X3各自独立地表示NH2，SH或OH; n和m各自独立地表示1〜3的整数。

公开(公告)号：US20150295035A1

公开(公告)日：2015-10-15

申请号：US14726827

申请日：2015-06-01

申请人： FUJIFILM CORPORATION

发明人： Masashi ONO ,  Makoto KIKUCHI ,  Atsushi TANAKA ,  Masayuki SUZUKI ,  Yoshihiko KANEMITSU

IPC分类号： H01L29/06 ,  H01L29/786 ,  H01L31/0352 ,  H01L33/26 ,  H01L31/032 ,  H01L29/24 ,  H01L33/06

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/125 ,  H01L29/24 ,  H01L29/78696 ,  H01L31/032 ,  H01L31/035218 ,  H01L31/0392 ,  H01L31/072 ,  H01L33/06 ,  H01L33/26 ,  H01L51/502 ,  Y02E10/50

摘要： A semiconductor film includes a cluster of semiconductor quantum dots each having a metal atom and ligands coordinating to respective semiconductor quantum dots, and the semiconductor quantum dots have an average shortest inter-dot distance of less than 0.45 nm. A solar cell, a light-emitting diode, a thin film transistor, and an electronic device include the semiconductor film.

摘要翻译： 半导体膜包括各自具有与各半导体量子点配位的金属原子和配体的半导体量子点簇，半导体量子点的平均最短点间距离小于0.45nm。 太阳能电池，发光二极管，薄膜晶体管和电子器件包括半导体膜。

公开(公告)号：US20150287878A1

公开(公告)日：2015-10-08

申请号：US14746103

申请日：2015-06-22

申请人： FUJIFILM Corporation

发明人： Masashi ONO ,  Makoto KIKUCHI ,  Atsushi TANAKA ,  Masayuki SUZUKI ,  Yoshihiko KANEMITSU

IPC分类号： H01L33/06 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/032 ,  H01L29/24 ,  H01L33/30 ,  H01L29/786 ,  H01L29/66 ,  H01L29/06 ,  H01L29/201 ,  H01L31/18 ,  H01L33/00

CPC分类号： H01L33/06 ,  H01L29/0665 ,  H01L29/201 ,  H01L29/245 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78681 ,  H01L31/0304 ,  H01L31/0324 ,  H01L31/035218 ,  H01L31/18 ,  H01L31/184 ,  H01L33/0062 ,  H01L33/0091 ,  H01L33/30 ,  H01L33/44 ,  H01L51/502

摘要： A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; a thiocyanate ion coordinated to the semiconductor quantum dots; and a metal ion.

摘要翻译： 一种半导体膜，包括：包含金属原子的半导体量子点的组件; 与半导体量子点配位的硫氰酸根离子; 和金属离子。

公开(公告)号：US20150236178A1

公开(公告)日：2015-08-20

申请号：US14699817

申请日：2015-04-29

申请人： FUJIFILM Corporation

发明人： Masashi ONO ,  Makoto KIKUCHI ,  Atsushi TANAKA ,  Masayuki SUZUKI ,  Yoshihiko KANEMITSU

IPC分类号： H01L31/0352 ,  H01L31/0304 ,  H01L31/032 ,  H01L33/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/26 ,  H01L29/786 ,  H01L29/06 ,  H01L29/12 ,  H01L29/66 ,  H01L21/02 ,  C07F7/24 ,  C07F9/06 ,  H01L31/18

CPC分类号： H01L31/035218 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C07F7/24 ,  C07F9/06 ,  H01L21/02422 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L29/0665 ,  H01L29/122 ,  H01L29/127 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0304 ,  H01L31/03044 ,  H01L31/0324 ,  H01L31/072 ,  H01L31/18 ,  H01L31/184 ,  H01L31/1856 ,  H01L33/0062 ,  H01L33/0075 ,  H01L33/0091 ,  H01L33/06 ,  H01L33/26 ,  H01L33/30 ,  H01L33/32 ,  Y02E10/544 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S977/774 ,  Y10T428/249921 ,  Y10T428/268

摘要： A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and at least one ligand that is coordinated to the semiconductor quantum dots and that is selected from a ligand represented by Formula (A), a ligand represented by Formula (B), and a ligand represented by Formula (C): wherein, in Formula (A), X1 represents —SH, —NH2, or —OH; and each of A1 and B1 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; provided that when A1 and B1 are both hydrogen atoms, X1 represents —SH or —OH; in Formula (B), X2 represents —SH, —NH2, or —OH; and each of A2 and B2 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; and in Formula (C), A3 represents a hydrogen atom or a substituent having from 1 to 10 atoms.

摘要翻译： 一种半导体膜，包括：包含金属原子的半导体量子点的组件; 和与半导体量子点配位的至少一种配体，其选自由式（A）表示的配体，式（B）表示的配体和由式（C）表示的配位体：其中，在式 （A）中，X 1表示-SH，-NH 2或-OH; A1和B1各自独立地表示氢原子或具有1至10个原子的取代基; 条件是当A1和B1都是氢原子时，X1表示-SH或-OH; 在式（B）中，X 2表示-SH，-NH 2或-OH; A2和B2各自独立地表示氢原子或具有1至10个原子的取代基; 在式（C）中，A3表示氢原子或具有1〜10个原子的取代基。