公开(公告)号：US20150103977A1

公开(公告)日：2015-04-16

申请号：US14571293

申请日：2014-12-16

申请人： FUJIFILM CORPORATION

发明人： Masashi ONO ,  Masahiro TAKATA ,  Toshiya IDEUE ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L21/02 ,  G01N23/04 ,  G01T1/24 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/02628 ,  G01N23/04 ,  G01T1/24 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L27/1225 ,  H01L27/1292 ,  H01L27/14632 ,  H01L27/14676 ,  H01L29/263 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L31/032

摘要： A method of producing a thin film transistor includes: forming a gate electrode; forming a gate insulating film that contacts the gate electrode; forming, by a liquid phase method, an oxide semiconductor layer arranged facing the gate electrode with the gate insulating film provided therebetween, the oxide semiconductor layer including a first region and a second region, the first region being represented by In(a)Ga(b)Zn(c)O(d), the second region being represented by In(e)Ga(f)Zn(g)O(h), and the second region being located farther from the gate electrode than the first region; and forming a source electrode and a drain electrode that are arranged apart from each other and are capable of being conductively connected through the oxide semiconductor layer.

摘要翻译： 制造薄膜晶体管的方法包括：形成栅电极; 形成与所述栅电极接触的栅极绝缘膜; 通过液相法形成面对栅极电极的氧化物半导体层，其间设置有栅极绝缘膜，所述氧化物半导体层包括第一区域和第二区域，所述第一区域由In（a）Ga（ b）Zn（c）O（d），第二区域由In（e）Ga（f）Zn（g）O（h）表示，第二区域位于比第一区域更远离栅电极的位置; 并且形成彼此分离并能够通过氧化物半导体层导电连接的源电极和漏电极。