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公开(公告)号：US20210119118A1
公开(公告)日：2021-04-22
申请号：US17109318
申请日：2020-12-02
摘要： A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes (a) etching through at least a portion of a thickness of the surface region to create a first set of exposed areas in the form of multiple strips extending in a first direction, and (b) etching through at least a portion of a thickness of the surface region to create a second set of exposed areas in the form of multiple strips extending in a second direction. The first set of exposed areas and the second set of exposed areas may have multiple areas that overlap. The method may also include, (c) after the etching in (a) and (b), etching through at least a portion of the thickness of the magnetoresistive stack through the first set and second set of exposed areas.
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公开(公告)号：US20210083174A1
公开(公告)日：2021-03-18
申请号：US16572982
申请日：2019-09-17
摘要： An integrated circuit (IC) device includes a logic portion including logic circuits in multiple vertically stacked metal layers interconnected by one or more via layers, and a memory portion with a plurality of magnetoresistive devices. Each magnetoresistive device is provided in a single metal layer of the multiple vertically stacked metal layers of the IC device.
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公开(公告)号：US20230403943A1
公开(公告)日：2023-12-14
申请号：US18456293
申请日：2023-08-25
摘要： A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer, (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.
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公开(公告)号：US20200286950A1
公开(公告)日：2020-09-10
申请号：US16881958
申请日：2020-05-22
摘要： Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry. In some embodiments, the magnetoresistive device structures are designed such that the devices are able to fit within the vertical dimensions of the integrated circuit associated with a single metal layer and a single layer of interlayer dielectric material. Integrating the processing for the magnetoresistive devices can include using the same standard interlayer dielectric material as used in the surrounding circuits on the integrated circuit as well as using standard vias to interconnect to at least one of the electrodes of the magnetoresistive devices.
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公开(公告)号：US20200013950A1
公开(公告)日：2020-01-09
申请号：US16576039
申请日：2019-09-19
摘要： A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes etching through a first portion of the magnetoresistive stack using a first etch process to form one or more sidewalls. At least a portion of the sidewalls includes redeposited material after the etching. The method also includes modifying at least a portion of the redeposited material on the sidewalls, and etching through a second portion of the magnetoresistive stack after the modifying step. The magnetoresistive stack may include a first magnetic region, an intermediate region disposed over the first magnetic region, and a second magnetic region disposed over the intermediate region.
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公开(公告)号：US20240114802A1
公开(公告)日：2024-04-04
申请号：US18479226
申请日：2023-10-02
发明人： Jijun SUN , Kerry Joseph NAGEL
CPC分类号： H10N50/10 , G11C11/161 , H10B61/00 , H10N50/01 , H10N50/85
摘要： A magnetoresistive stack may include a fixed magnetic region, where the fixed magnetic region may include a reference layer, an interfacial layer disposed above the reference layer, an intermediate layer disposed above the interfacial layer, and a free magnetic region disposed above the intermediate layer. The interfacial layer may include cobalt (Co).
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公开(公告)号：US20240107891A1
公开(公告)日：2024-03-28
申请号：US18526636
申请日：2023-12-01
摘要： A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes etching through a first portion of the magnetoresistive stack using a first etch process to form one or more sidewalls. At least a portion of the sidewalls includes redeposited material after the etching. The method also includes modifying at least a portion of the redeposited material on the sidewalls, and etching through a second portion of the magnetoresistive stack after the modifying step. The magnetoresistive stack may include a first magnetic region, an intermediate region disposed over the first magnetic region, and a second magnetic region disposed over the intermediate region.
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公开(公告)号：US20220149271A1
公开(公告)日：2022-05-12
申请号：US17533395
申请日：2021-11-23
摘要： An integrated circuit (IC) device includes a logic portion including logic circuits in multiple vertically stacked metal layers interconnected by one or more via layers, and a memory portion with a plurality of magnetoresistive devices. Each magnetoresistive device is provided in a single metal layer of the multiple vertically stacked metal layers of the IC device.
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公开(公告)号：US20200373481A1
公开(公告)日：2020-11-26
申请号：US16989155
申请日：2020-08-10
摘要： A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes etching through a first portion of the magnetoresistive stack using a first etch process to form one or more sidewalls. At least a portion of the sidewalls includes redeposited material after the etching. The method also includes modifying at least a portion of the redeposited material on the sidewalls, and etching through a second portion of the magnetoresistive stack after the modifying step. The magnetoresistive stack may include a first magnetic region, an intermediate region disposed over the first magnetic region, and a second magnetic region disposed over the intermediate region.
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公开(公告)号：US20200287128A1
公开(公告)日：2020-09-10
申请号：US16881151
申请日：2020-05-22
摘要： A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes (a) etching through at least a portion of a thickness of the surface region to create a first set of exposed areas in the form of multiple strips extending in a first direction, and (b) etching through at least a portion of a thickness of the surface region to create a second set of exposed areas in the form of multiple strips extending in a second direction. The first set of exposed areas and the second set of exposed areas may have multiple areas that overlap. The method may also include, (c) after the etching in (a) and (b), etching through at least a portion of the thickness of the magnetoresistive stack through the first set and second set of exposed areas.
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