发明申请
- 专利标题： METHOD OF FABRICATING A MAGNETORESISTIVE BIT FROM A MAGNETORESISTIVE STACK
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申请号： US16881151申请日： 2020-05-22
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公开(公告)号： US20200287128A1公开(公告)日： 2020-09-10
- 发明人: Kerry Joseph NAGEL , Sanjeev AGGARWAL , Sarin A. DESHPANDE
- 申请人： Everspin Technologies, Inc.
- 申请人地址： US AZ Chandler
- 专利权人： Everspin Technologies, Inc.
- 当前专利权人： Everspin Technologies, Inc.
- 当前专利权人地址： US AZ Chandler
- 主分类号： H01L43/12
- IPC分类号： H01L43/12 ; H01L43/08 ; G11C11/16 ; H01L43/02 ; H01L43/10
摘要：
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes (a) etching through at least a portion of a thickness of the surface region to create a first set of exposed areas in the form of multiple strips extending in a first direction, and (b) etching through at least a portion of a thickness of the surface region to create a second set of exposed areas in the form of multiple strips extending in a second direction. The first set of exposed areas and the second set of exposed areas may have multiple areas that overlap. The method may also include, (c) after the etching in (a) and (b), etching through at least a portion of the thickness of the magnetoresistive stack through the first set and second set of exposed areas.
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