公开(公告)号：US20240306516A1

公开(公告)日：2024-09-12

申请号：US18665145

申请日：2024-05-15

申请人： Everspin Technologies, Inc.

发明人： Jijun SUN

IPC分类号： H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

CPC分类号： H10N50/10 ,  G11C11/161 ,  H10B61/20 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

摘要： Aspects of the present disclosure are directed to magnetoresistive stacks including regions having increased height-to-diameter ratios. Exemplary magnetoresistive stacks (for example, used in a magnetic tunnel junction (MTJ) magnetoresistive device) of the present disclosure include one or more multilayer synthetic antiferromagnetic structures (SAFs) or synthetic ferromagnetic structures (SyFs) in order to promote stability of the SAF or SyF, e.g., for smaller-sized MTJs.

公开(公告)号：US20210375342A1

公开(公告)日：2021-12-02

申请号：US17255915

申请日：2019-06-27

申请人： Everspin Technologies, Inc.

发明人： Jijun SUN ,  Frederick MANCOFF ,  Jason JANESKY ,  Kevin CONLEY ,  Lu HUI ,  Sumio IKEGAWA

IPC分类号： G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12

摘要： Aspects of the present disclosure are directed to magnetic tunnel junction (MTJ) structures comprising multiple MTJ bits connected in series. For example, a magnetic tunnel junction (MTJ) stack according to the present disclosure may include at least a first MTJ bit and a second MTJ bit stacked above the first MTJ bit, and a resistance state of the MTJ stack may be read by passing a single read current through both the first MTJ bit and the second MTJ bit.

公开(公告)号：US20200235288A1

公开(公告)日：2020-07-23

申请号：US16744963

申请日：2020-01-16

申请人： Everspin Technologies, Inc.

发明人： Sumio IKEGAWA ,  Han Kyu LEE ,  Sanjeev AGGARWAL ,  Jijun SUN ,  Syed M. ALAM ,  Thomas ANDRE

IPC分类号： H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14

摘要： The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magnetically fixed region, a magnetically free region above or below the magnetically fixed region, and an intermediate region positioned between the magnetically fixed region and the magnetically free region, wherein the intermediate region includes a first dielectric material. The magnetoresistive device may also include encapsulation layers formed on opposing side walls of the magnetically free region, wherein the encapsulation layers include the first dielectric material.

公开(公告)号：US20230380297A1

公开(公告)日：2023-11-23

申请号：US18360564

申请日：2023-07-27

申请人： Everspin Technologies, Inc.

发明人： Jijun SUN ,  Jon SLAUGHTER ,  Renu WHIG

IPC分类号： H10N50/80 ,  G11C11/16 ,  H10B61/00 ,  H10N50/85 ,  H10N50/01 ,  H10N50/10

CPC分类号： H10N50/80 ,  G11C11/161 ,  H10B61/22 ,  H10N50/85 ,  H10N50/01 ,  H10N50/10

摘要： A magnetically free region of magnetoresistive device includes at least a first ferromagnetic region and a second ferromagnetic region separated by a non-magnetic insertion region. At least one of the first ferromagnetic region and the second ferromagnetic region may include at least a boron-rich ferromagnetic layer positioned proximate a boron-free ferromagnetic layer.

公开(公告)号：US20210111223A1

公开(公告)日：2021-04-15

申请号：US17131926

申请日：2020-12-23

申请人： Everspin Technologies, Inc.

发明人： Jijun SUN ,  Sanjeev AGGARWAL ,  Han-Jong CHIA ,  Jon M. SLAUGHTER ,  Renu WHIG

IPC分类号： H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  G11C11/16 ,  H01L43/12 ,  G11B5/39 ,  H01L43/10

摘要： A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).

公开(公告)号：US20200035909A1

公开(公告)日：2020-01-30

申请号：US16519741

申请日：2019-07-23

申请人： Everspin Technologies, Inc.

发明人： Jijun SUN ,  SHIMON ,  Han-Jong CHIA

IPC分类号： H01L43/04 ,  G11C11/16 ,  H01L27/22 ,  H01L43/06 ,  H01L43/14

摘要： Spin-Hall (SH) material is provided near free regions of magnetoresistive devices that include magnetic tunnel junctions. Current flowing through such SH material injects spin current into the free regions such that spin torque is applied to the free regions. The spin torque generated from SH material can be used to switch the free region or to act as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction, in order to improve the reliability, endurance, or both of the magnetoresistive device. Further, one or more additional regions or manufacturing steps may improve the switching efficiency and the thermal stability of magnetoresistive devices.

公开(公告)号：US20190165253A1

公开(公告)日：2019-05-30

申请号：US16188934

申请日：2018-11-13

申请人： Everspin Technologies, Inc.

发明人： Jijun SUN ,  Jon SLAUGHTER ,  Renu WHIG

IPC分类号： H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

摘要： A magnetically free region of magnetoresistive device includes at least a first ferromagnetic region and a second ferromagnetic region separated by a non-magnetic insertion region. At least one of the first ferromagnetic region and the second ferromagnetic region may include at least a boron-rich ferromagnetic layer positioned proximate a boron-free ferromagnetic layer.

公开(公告)号：US20240114802A1

公开(公告)日：2024-04-04

申请号：US18479226

申请日：2023-10-02

申请人： Everspin Technologies, Inc.

发明人： Jijun SUN ,  Kerry Joseph NAGEL

IPC分类号： H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

CPC分类号： H10N50/10 ,  G11C11/161 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

摘要： A magnetoresistive stack may include a fixed magnetic region, where the fixed magnetic region may include a reference layer, an interfacial layer disposed above the reference layer, an intermediate layer disposed above the interfacial layer, and a free magnetic region disposed above the intermediate layer. The interfacial layer may include cobalt (Co).

公开(公告)号：US20230263071A1

公开(公告)日：2023-08-17

申请号：US17670049

申请日：2022-02-11

申请人： Everspin Technologies, Inc.

发明人： Sumio IKEGAWA ,  Jijun SUN ,  Monika ARORA

IPC分类号： H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

CPC分类号： H01L43/02 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

摘要： A magnetoresistive stack may include a first electrically conductive material, a fixed region having a fixed magnetic state, a free region configured to have a first magnetic state and a second magnetic state, a dielectric layer disposed between the fixed region and the free region, a spacer region, and a cap layer disposed between the spacer region and the free region. The free region may include a layer of ferromagnetic material, an insertion layer, an iPMA layer, and/or a low saturation magnetization layer.

公开(公告)号：US20230047005A1

公开(公告)日：2023-02-16

申请号：US17397067

申请日：2021-08-09

申请人： Everspin Technologies, Inc.

发明人： Jijun SUN

IPC分类号： H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

摘要： A magnetoresistive stack may include: a fixed region having a fixed magnetic state, a spacer region, a first dielectric layer and a second dielectric layer, where both the first dielectric layer and the second dielectric layer are between the fixed region and the spacer region, and a free region between the first dielectric layer and the second dielectric layer. The free region may be configured to have a first magnetic state and a second magnetic state. The free region may include an interface layer, a multilayer structure, an insertion layer (e.g., a metallized insertion layer), one or more ferromagnetic layers (e.g., metallized ferromagnetic layers), and/or a transition layer (e.g., a metallized transition layer).