- 专利标题： MAGNETORESISTIVE STACKS AND METHODS THEREFOR
-
申请号： US18360564申请日： 2023-07-27
-
公开(公告)号： US20230380297A1公开(公告)日： 2023-11-23
- 发明人: Jijun SUN , Jon SLAUGHTER , Renu WHIG
- 申请人： Everspin Technologies, Inc.
- 申请人地址： US AZ Chandler
- 专利权人： Everspin Technologies, Inc.
- 当前专利权人： Everspin Technologies, Inc.
- 当前专利权人地址： US AZ Chandler
- 主分类号： H10N50/80
- IPC分类号： H10N50/80 ; G11C11/16 ; H10B61/00 ; H10N50/85 ; H10N50/01 ; H10N50/10
摘要：
A magnetically free region of magnetoresistive device includes at least a first ferromagnetic region and a second ferromagnetic region separated by a non-magnetic insertion region. At least one of the first ferromagnetic region and the second ferromagnetic region may include at least a boron-rich ferromagnetic layer positioned proximate a boron-free ferromagnetic layer.
信息查询
