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公开(公告)号：US20240061306A1
公开(公告)日：2024-02-22
申请号：US18342630
申请日：2023-06-27
Inventor： Yong Hae KIM , Chi-Sun HWANG , Kyunghee CHOI , Joo Yeon KIM , Jaehyun MOON , Jong-Heon YANG , Ji Hun CHOI
IPC: G02F1/19
CPC classification number: G02F1/19
Abstract: Disclosed is a meta-structure. The meta-structure includes a lower electrode, a lower insulating layer on the lower electrode, a lower metal oxide layer on the lower insulating layer, a lower metal layer on the lower metal oxide layer, a middle metal oxide layer on the lower metal layer, an upper metal layer on the middle metal oxide layer, an upper metal oxide layer on the upper metal layer, an upper insulating layer on the upper metal oxide layer, and antenna electrodes on the upper insulating layer.
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公开(公告)号：US20220199836A1
公开(公告)日：2022-06-23
申请号：US17523320
申请日：2021-11-10
Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , Korea Advanced Institute of Science and Technology
Inventor： Chi-Sun HWANG , SangHee PARK , KwangHeum LEE , Jae-Eun PI , SeungHee LEE , Jong-Heon YANG , Ji Hun CHOI
IPC: H01L29/786 , H01L29/66 , H01L29/40 , H01L29/49
Abstract: A vertical channel thin film transistor includes substrate, lower source/drain electrode, spacer layer, upper source/drain electrode covering portion of upper surface of the spacer layer, interlayer insulating pattern covering portion of upper surface of the upper source/drain electrode and upper surface of the spacer layer exposed by the upper source/drain electrode, contact hole disposed on the lower source/drain electrode and passing through the interlayer insulating pattern, the upper source/drain electrode, and the spacer layer, active pattern covering inner wall and bottom surface of the contact hole and extending over upper surface of the upper source/drain electrode and upper surface of the interlayer insulating pattern, gate insulating pattern filling portion of the contact hole and extending along upper surface of the active pattern, and gate electrode filling portion of the contact hole and extending along upper surface of the gate insulating pattern.
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公开(公告)号：US20230083225A1
公开(公告)日：2023-03-16
申请号：US17943528
申请日：2022-09-13
Inventor： Jong-Heon YANG , Seung Youl KANG , Yong Hae KIM , Hee-ok KIM , Jeho NA , Jaehyun MOON , Chan Woo PARK , Himchan OH , Seong-Mok CHO , Sung Haeng CHO , Ji Hun CHOI , Jae-Eun PI , Chi-Sun HWANG
IPC: H01L27/32 , G09G3/3266 , G09G3/3225
Abstract: Provided are a semiconductor device, a display panel, and a display device including the same. The semiconductor device includes a lower electrode on one side of a substrate, a spacer on another side of the substrate, a middle electrode on the spacer, a lower channel layer on portions of a sidewall of the spacer, the middle electrode, and the lower electrode, a lower gate insulating layer on the lower channel layer, a common gate electrode on the gate insulating layer, an upper gate insulating layer on the common gate electrode, an upper electrode on the spacer and the upper gate insulating layer of the middle electrode, an upper channel layer connected to the upper electrode and disposed on a sidewall of the upper gate insulating layer, and a contact electrode connected to a portion of the upper channel layer and passing through the lower gate insulating layer and the upper gate insulating layer outside the common gate electrode so as to be connected to the lower electrode.
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4.发明申请DISPLAY DEVICE, METHOD OF FABRICATING THE SAME, AND METHOD OF FABRICATING IMAGE SENSOR DEVICE 有权显示装置，其制造方法以及制作图像传感器装置的方法公开(公告)号：US20150214250A1
公开(公告)日：2015-07-30
申请号：US14446394
申请日：2014-07-30
Inventor： Jong-Heon YANG , Jonghyurk PARK , Chunwon BYUN , Chi-Sun HWANG
IPC: H01L27/12
CPC classification number: H01L27/1225 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1259 , H01L27/127 , H01L27/14 , H01L27/14609 , H01L27/14689 , H01L27/32 , H01L27/3241 , H01L27/3244 , H01L29/66757
Abstract: Provided are a display device, a method of fabricating the display device, and a method of fabricating an image sensor device. The method of fabricating the display device includes preparing a substrate including a cell array area and a peripheral circuit area, forming a silicon layer on the peripheral circuit area of the substrate, forming oxide layers on the cell array area and the peripheral circuit area of the substrate, forming gate dielectric layers on the silicon layer and the oxide layers, forming the gate electrodes on the gate dielectric layers, wherein the gate electrodes expose both ends of the silicon layer and both ends of the oxide layers, and injecting dopant into both ends of the silicon layer and both ends of the oxide layers at the same time.
Abstract translation: 提供了显示装置，制造显示装置的方法以及制造图像传感器装置的方法。 制造显示装置的方法包括制备包括单元阵列区域和外围电路区域的基板，在基板的外围电路区域上形成硅层，在单元阵列区域和外围电路区域上形成氧化物层 衬底，在硅层和氧化物层上形成栅极电介质层，在栅极电介质层上形成栅电极，其中栅电极暴露硅层的两端和氧化物层的两端，并将掺杂剂注入两端 的硅层和氧化物层的两端。
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公开(公告)号：US20150160511A1
公开(公告)日：2015-06-11
申请号：US14286190
申请日：2014-05-23
Inventor： Yong Hae KIM , Gi Heon KIM , Hojun RYU , Chi-Sun HWANG , Jong-Heon YANG , Sang Chul LIM , Jae Bon KOO , Jonghee LEE , Jeong Ik LEE
IPC: G02F1/1335 , G02F1/1343 , G02F1/1368
CPC classification number: G02F1/133553 , G02F1/133555 , G02F2001/133541 , G02F2201/44
Abstract: Provided is a display device and a method of manufacturing the same. The display device includes a reflective display part including a first cathode electrode and a first anode electrode and a liquid crystal layer, a light emitting display part including a second cathode electrode and a second anode electrode and a light emission film, and a thin film transistor part being electrically connected to the first and second anode electrodes. The light emitting display part further includes a bank disposed on one side of the second anode electrode between the second anode electrode and the light emission film.
Abstract translation: 提供一种显示装置及其制造方法。 显示装置包括：反射显示部，包括第一阴极电极和第一阳极电极和液晶层;发光显示部分，包括第二阴极电极和第二阳极电极;以及发光膜;以及薄膜晶体管 部分电连接到第一和第二阳极电极。 发光显示部还包括设置在第二阳极电极与发光膜之间的一侧的堤。
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Patent Agency Ranking
公开(公告)号：US20240213372A1
公开(公告)日：2024-06-27
申请号：US18487625
申请日：2023-10-16
Inventor： Yong Hae KIM , Jong-Heon YANG , Seong-Mok CHO , Ji Hun CHOI , Jae-Eun PI , Chi-Sun HWANG
IPC: H01L29/786 , H01L27/06 , H01L29/417 , H01L29/66
CPC classification number: H01L29/78642 , H01L27/0629 , H01L28/20 , H01L29/41733 , H01L29/6675 , H01L29/66772 , H01L29/66969 , H01L29/78654 , H01L29/78672 , H01L29/7869 , H01L29/78696
Abstract: Provided is a method for manufacturing a vertical channel thin film transistor. The method for manufacturing the vertical channel thin film transistor includes forming a bottom source drain electrode, forming a first interlayer insulating layer, forming first middle source drain electrodes, forming a second interlayer insulating layer, forming a top source drain electrode, forming an opening through which portions of the bottom source drain electrode, the first middle source drain electrodes, and the top source drain electrode are exposed, forming channel layers, forming a gate insulating layer on the channel layers, the bottom source drain electrode, the first middle source drain electrodes, and the top source drain electrode, and forming gate electrodes on the gate insulating layer.
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公开(公告)号：US20240128653A1
公开(公告)日：2024-04-18
申请号：US18343068
申请日：2023-06-28
Inventor： Yong Hae KIM , Chi-Sun HWANG , Joo Yeon KIM , Jaehyun MOON , Jong-Heon YANG , Kyunghee CHOI , Ji Hun CHOI
CPC classification number: H01Q15/0086 , H01Q1/364 , H01Q15/148
Abstract: Disclosed is a meta-structure. The meta-structure includes a lower electrode, a lower insulating layer on the lower electrode, a lower metal oxide layer on the lower insulating layer, a metal layer on the lower metal oxide layer, an upper metal oxide layer on the metal layer, an upper insulating layer on the upper metal oxide layer, and antenna electrodes on the upper insulating layer.
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公开(公告)号：US20210393978A1
公开(公告)日：2021-12-23
申请号：US17353495
申请日：2021-06-21
Inventor： O Eun KWON , Chan-mo KANG , Kukjoo KIM , Jin-Wook SHIN , CHUNWON BYUN , Sukyung CHOI , Byoung-Hwa KWON , Sujung KIM , Sooji NAM , Chan Woo PARK , Jong-Heon YANG
Abstract: Provided is a bio-signal detection and stimulation device. The bio-signal detection and stimulation device includes a flexible substrate, a stimulation part on the flexible substrate, and a detection electrode part on the flexible substrate. The stimulation part and the detection electrode part vertically overlap each other, the stimulation part includes an organic light emitting diode (OLED), the stimulation part emits an optical signal, and the detection electrode part detects a bio-signal.
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公开(公告)号：US20160246116A1
公开(公告)日：2016-08-25
申请号：US15010968
申请日：2016-01-29
Inventor： Jong-Heon YANG , Jae Bon KOO , Byoung-Hwa KWON , Gi Heon KIM , Yong Hae KIM , Hojun RYU , Chan Woo PARK , Chunwon BYUN , Hyunkoo LEE , Jong Tae LIM , Kyoung Ik CHO , Seong-Mok CHO , Hye Yong CHU , Chi-Sun HWANG
IPC: G02F1/1335 , G02F1/133 , G02F1/1343
CPC classification number: G02F1/133308 , G02F2001/133317 , G02F2001/133616 , G02F2201/44
Abstract: Provided is a display device. The display device includes a lower display element where a substrate, a first lower electrode, a liquid crystal part, and a second lower electrode are sequentially stacked, an upper display element stacked vertical to the lower display element, where a first upper electrode, a light emitting part, a second upper electrode, and a protective part are sequentially stacked, and a middle part configured to deliver a driving signal to the lower and upper display elements, between the lower and upper display elements.
Abstract translation: 提供了一种显示装置。 显示装置包括：下部显示元件，其中基板，第一下部电极，液晶部分和第二下部电极依次层叠;垂直于下部显示元件堆叠的上部显示元件，其中第一上部电极， 发光部分，第二上电极和保护部分依次层叠，并且中间部分构造成在下显示元件和上显示元件之间向下显示元件和上显示元件传递驱动信号。
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10.发明申请METHOD FOR FORMING METAL OXIDE THIN FILM AND DEVICE FOR PRINTING METAL OXIDE THIN FILM 审中-公开形成金属氧化物薄膜的方法和用于印刷金属氧化物薄膜的装置公开(公告)号：US20150225845A1
公开(公告)日：2015-08-13
申请号：US14608856
申请日：2015-01-29
Inventor： Jonghyurk PARK , Jong-Heon YANG , Seunghyup YOO , Jungmin CHOI , Hye Yong CHU , Chi-Sun HWANG
IPC: C23C16/40 , C23C16/48 , C23C16/511 , C23C16/448
CPC classification number: C23C16/48 , C23C16/047 , C23C16/407 , C23C16/4481 , C23C16/482 , C23C16/545
Abstract: Provided is a metal oxide thin film forming method including: vaporizing a first metal oxide precursor; allowing the vaporized first metal oxide precursor to flow into a mixture chamber by using a first carrier gas; injecting the flowed first metal oxide precursor on a substrate through a micro nozzle connected to the mixture chamber to form a first metal oxide precursor layer on the substrate; and emitting electromagnetic waves to the first metal oxide precursor layer to form a first metal oxide layer.
Abstract translation: 提供一种金属氧化物薄膜形成方法，包括：蒸发第一金属氧化物前体; 允许蒸发的第一金属氧化物前体通过使用第一载气流入混合室; 通过连接到混合室的微喷嘴将流动的第一金属氧化物前体注入到基底上，以在基底上形成第一金属氧化物前体层; 并向第一金属氧化物前体层发射电磁波，以形成第一金属氧化物层。
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