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1.发明申请公开(公告)号：US20090140384A1
公开(公告)日：2009-06-04
申请号：US12367812
申请日：2009-02-09
Applicant: Guillaume Bouche , Pascal Ancey , Bernard Viala , Sandrine Couderc
Inventor： Guillaume Bouche , Pascal Ancey , Bernard Viala , Sandrine Couderc
CPC classification number: H01F41/301 , B82Y25/00 , B82Y40/00 , H01F10/007 , H01F10/136 , H01F10/138 , H01F10/147 , H01F10/3227 , H01F41/18 , H01F41/302 , H01L23/552 , H01L2924/0002 , Y10T428/256 , H01L2924/00
Abstract: A thin soft magnetic film combines a high magnetization with an insulating character. The film is formed by nitriding Fe-rich ferromagnetic nanograins immersed in an amorphous substrate. A selective oxidation of the amorphous substrate is then performed. The result is a thin, insulating, soft magnetic film of high magnetization. Many types of integrated circuits can be made which include a component using a membrane incorporating the above-mentioned thin film.
Abstract translation: 薄的软磁膜将高磁化强度与绝缘特性相结合。 该薄膜通过浸渍在非晶基底中的富铁铁磁性纳米晶粒进行氮化而形成。 然后进行非晶衬底的选择性氧化。 结果是具有高磁化强度的薄而绝缘的软磁膜。 可以制造许多类型的集成电路，其包括使用结合有上述薄膜的膜的部件。
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2.发明授权Process for obtaining a thin, insulating, soft magnetic film of high magnetization 有权用于获得高磁化强度薄的绝缘软磁膜的工艺公开(公告)号：US07504007B2
公开(公告)日：2009-03-17
申请号：US11189028
申请日：2005-07-25
Applicant: Guillaume Bouche , Pascal Ancey , Bernard Viala , Sandrine Couderc
Inventor： Guillaume Bouche , Pascal Ancey , Bernard Viala , Sandrine Couderc
CPC classification number: H01F41/301 , B82Y25/00 , B82Y40/00 , H01F10/007 , H01F10/136 , H01F10/138 , H01F10/147 , H01F10/3227 , H01F41/18 , H01F41/302 , H01L23/552 , H01L2924/0002 , Y10T428/256 , H01L2924/00
Abstract: A thin soft magnetic film combines a high magnetization with an insulating character. The film is formed by nitriding Fe-rich ferromagnetic nanograins immersed in an amorphous substrate. A selective oxidation of the amorphous substrate is then performed. The result is a thin, insulating, soft magnetic film of high magnetization. Many types of integrated circuits can be made which include a component using a membrane incorporating the above-mentioned thin film.
Abstract translation: 薄的软磁膜将高磁化强度与绝缘特性相结合。 该薄膜通过浸渍在非晶基底中的富铁铁磁性纳米晶粒进行氮化而形成。 然后进行非晶衬底的选择性氧化。 结果是具有高磁化强度的薄而绝缘的软磁膜。 可以制造许多类型的集成电路，其包括使用结合有上述薄膜的膜的部件。
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3.发明申请Radio Frequency Device with Magnetic Element, Method for Making Such a Magnetic Element 审中-公开具有磁性元件的射频装置，制造这种磁性元件的方法公开(公告)号：US20080297292A1
公开(公告)日：2008-12-04
申请号：US11996332
申请日：2006-07-19
Applicant: Bernard Viala , Sandrine Couderc , Pascal Ancey
Inventor： Bernard Viala , Sandrine Couderc , Pascal Ancey
CPC classification number: H01F10/007 , B82Y25/00 , H01F10/147 , H01F10/16 , H01F41/18 , H01F41/205 , H01F2017/0066 , H01P1/215
Abstract: A radiofrequency device may include an electrically conducting element associated with at least one continuous magnetic element. The first continuous magnetic element may include a substrate coated with a magnetic film having a granular structure, with grains that are inclined to the normal to the substrate, or a columnar texture inclined to the normal of the substrate.
Abstract translation: 射频装置可以包括与至少一个连续磁性元件相关联的导电元件。 第一连续磁性元件可以包括涂覆有具有颗粒结构的磁性膜的基底，其具有垂直于基底的晶粒或与基底的法线倾斜的柱状结构。
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公开(公告)号：US20060082390A1
公开(公告)日：2006-04-20
申请号：US11189028
申请日：2005-07-25
Applicant: Guillaume Bouche , Pascal Ancey , Bernard Viala , Sandrine Couderc
Inventor： Guillaume Bouche , Pascal Ancey , Bernard Viala , Sandrine Couderc
CPC classification number: H01F41/301 , B82Y25/00 , B82Y40/00 , H01F10/007 , H01F10/136 , H01F10/138 , H01F10/147 , H01F10/3227 , H01F41/18 , H01F41/302 , H01L23/552 , H01L2924/0002 , Y10T428/256 , H01L2924/00
Abstract: A thin soft magnetic film combines a high magnetization with an insulating character. The film is formed by nitriding Fe-rich ferromagnetic nanograins immersed in an amorphous substrate. A selective oxidation of the amorphous substrate is then performed. The result is a thin, insulating, soft magnetic film of high magnetization. Many types of integrated circuits can be made which include a component using a membrane incorporating the above-mentioned thin film.
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公开(公告)号：US07565725B2
公开(公告)日：2009-07-28
申请号：US11512731
申请日：2006-08-30
Applicant: Guillaume Bouche , Fabrice Casset , Pascal Ancey
Inventor： Guillaume Bouche , Fabrice Casset , Pascal Ancey
IPC: H01G7/00
CPC classification number: H01G5/16 , Y10T29/435 , Y10T29/49002 , Y10T29/4913 , Y10T29/49139 , Y10T29/49147 , Y10T29/49165 , Y10T83/0476 , Y10T83/0505 , Y10T83/051 , Y10T83/0577
Abstract: A method for forming a variable capacitor including a conductive strip covering the inside of a cavity, and a flexible conductive membrane placed above the cavity, the cavity being formed according to the steps of: forming a recess in the substrate; placing a malleable material in the recess; having a stamp bear against the substrate at the level of the recess to give the upper part of the malleable material a desired shape; hardening the malleable material; and removing the stamp.
Abstract translation: 一种形成可变电容器的方法，所述可变电容器包括覆盖空腔内部的导电条和位于所述空腔上方的柔性导电膜，所述空腔根据以下步骤形成：在所述基板中形成凹部; 将可延展材料放置在凹槽中; 在凹部的水平处具有抵靠基板的印模，以使可延展材料的上部具有期望的形状; 硬化可延展材料; 并移除邮票。
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Patent Agency Ranking
公开(公告)号：US07625772B2
公开(公告)日：2009-12-01
申请号：US11904859
申请日：2007-09-27
Applicant: Fabrice Casset , Cedric Durand , Pascal Ancey
Inventor： Fabrice Casset , Cedric Durand , Pascal Ancey
IPC: H01L21/00
CPC classification number: B81C1/0065 , B81B2201/0271 , B81B2207/015 , H03H3/0073 , H03H9/1057 , H03H9/2405 , H03H2009/02496
Abstract: Method for making an electromechanical component on a plane substrate and comprising at least one structure vibrating in the plane of the substrate and actuation electrodes. The method comprises at least the following steps in sequence: formation of the substrate comprising one silicon area partly covered by two insulating areas, formation of a sacrificial silicon and germanium alloy layer by selective epitaxy starting from the uncovered part of the silicon area, formation of a strongly doped silicon layer by epitaxy, comprising a monocrystalline area arranged on said sacrificial layer and two polycrystalline areas arranged on insulating areas, simultaneous formation of the vibrating structure and actuation electrodes, by etching of a predetermined pattern in the monocrystalline area designed to form spaces between the electrodes and the vibrating structure, elimination of said sacrificial silicon and germanium alloy layer by selective etching.
Abstract translation: 一种用于在平面基板上制造机电部件并且包括在所述基板和致动电极的平面中振动的至少一个结构的方法。 该方法至少包括以下步骤：基底的形成，其包括由两个绝缘区域部分覆盖的一个硅区域，通过从硅区域的未覆盖部分开始的选择性外延形成牺牲硅和锗合金层，形成 通过外延的强掺杂硅层，包括布置在所述牺牲层上的单晶区域和布置在绝缘区域上的两个多晶区域，同时形成振动结构和致动电极，通过在设计成形成空间的单晶区域中蚀刻预定图案 在电极和振动结构之间，通过选择性蚀刻消除所述牺牲硅和锗合金层。
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公开(公告)号：US07304358B2
公开(公告)日：2007-12-04
申请号：US11227624
申请日：2005-09-15
Applicant: Pascal Ancey , Nicolas Abele , Fabrice Casset
Inventor： Pascal Ancey , Nicolas Abele , Fabrice Casset
IPC: H01L29/84
CPC classification number: G01P15/124 , B81B3/0035 , B81B2201/0235 , B81B2201/0264 , B81B2201/0271 , B81B2203/0109 , G01L1/005 , G01L9/0098 , H03B5/12 , H03B5/1237 , H03B5/30
Abstract: A MOS transistor with a deformable gate formed in a semiconductor substrate, including source and drain areas separated by a channel area extending in a first direction from the source to the drain and in a second direction perpendicular to the first one, a conductive gate beam placed at least above the channel area extending in the second direction between bearing points placed on the substrate on each side of the channel area, and such that the surface of the channel area is hollow and has a shape similar to that of the gate beam when said beam is in maximum deflection towards the channel area.
Abstract translation: 一种MOS晶体管，其具有形成在半导体衬底中的可变形栅极，包括源极和漏极区域，所述源极区域和漏极区域由沿着从源极到漏极的第一方向延伸的沟道区域和与第一方向垂直的第二方向分开， 至少在所述通道区域上方，在所述通道区域的每一侧上放置在所述基板上的支承点之间沿所述第二方向延伸，并且使得所述通道区域的表面是中空的，并且具有与所述栅极梁的形状类似的形状 光束朝向通道区域的最大偏转。
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公开(公告)号：US20050024178A1
公开(公告)日：2005-02-03
申请号：US10903896
申请日：2004-07-30
Applicant: Pascal Ancey , Daniel Saias
Inventor： Pascal Ancey , Daniel Saias
IPC: H01F21/00 , H01F17/00 , H01F21/12 , H01H61/04 , H01L21/3205 , H01L21/822 , H01L23/52 , H01L23/522 , H01L27/04 , H01F5/00
CPC classification number: H01F17/0006 , H01F21/12 , H01F2021/125 , H01H61/04 , H01H2061/006 , H01L23/5227 , H01L2924/0002 , H01L2924/00
Abstract: A switchable inductance that can be formed in an integrated circuit, including a spiral interrupted between two first points connected to two terminals via two metallizations running one above the other, one of the two metallizations being deformable; a hollowing between the two metallizations; and a switching device capable of deforming the deformable metallization to separate or to put in contact said two metallizations.
Abstract translation: 可以形成在集成电路中的可切换电感，包括通过两个金属化连接到两个端子的两个第一点之间中断的螺旋，一个在另一个之上运行，两个金属化之一可变形; 两个金属化之间的空心; 以及能够使可变形金属化变形以分离或接触所述两个金属化的开关装置。
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公开(公告)号：US20050001698A1
公开(公告)日：2005-01-06
申请号：US10815472
申请日：2004-04-01
Applicant: Guillaume Bouche , Nick Smears , Pascal Ancey , Gregory Caruyer
Inventor： Guillaume Bouche , Nick Smears , Pascal Ancey , Gregory Caruyer
CPC classification number: H03H9/586 , H03H2003/0428 , H03H2003/0435 , H03H2003/0471
Abstract: An electronic component (1) includes a substrate (2) and at least two piezoelectric resonators (3, 4) each having an active element (6, 9), a lower electrode (5, 8) and an upper electrode (7, 10). The lower electrode (5) of the first resonator (3) is made of a material that is different from that of the lower electrode (8) of the second resonator (4) such that the resonators exhibit different resonance frequencies.
Abstract translation: 电子部件（1）包括基板（2）和至少两个各自具有有源元件（6,9），下电极（5,8）和上电极（7,10）的压电谐振器（3,4） ）。 第一谐振器（3）的下电极（5）由不同于第二谐振器（4）的下电极（8）的材料制成，使得谐振器表现出不同的谐振频率。
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10.发明授权Integrated circuit comprising a device with a vertical mobile element integrated in a support substrate and method for producing the device with a mobile element 有权集成电路包括具有集成在支撑衬底中的垂直移动元件的装置和用于利用移动元件制造该装置的方法公开(公告)号：US08766381B2
公开(公告)日：2014-07-01
申请号：US13230035
申请日：2011-09-12
Applicant: Fabrice Casset , Lionel Cadix , Perceval Coudrain , Alexis Farcy , Laurent-Luc Chapelon , Yacine Felk , Pascal Ancey
Inventor： Fabrice Casset , Lionel Cadix , Perceval Coudrain , Alexis Farcy , Laurent-Luc Chapelon , Yacine Felk , Pascal Ancey
IPC: H01L29/06
CPC classification number: B81C1/00246 , B81B2201/014 , B81B2201/0235 , B81B2201/0271 , B81B2203/0353 , B81B2207/012 , B81C1/005 , G01P15/125 , G01P2015/082 , H01L2924/0002 , H03H3/0073 , H03H9/2426 , H01L2924/00
Abstract: The integrated circuit comprises a support substrate having opposite first and second main surfaces. A cavity passes through the support substrate and connects the first and second main surfaces. The integrated circuit comprises a device with a mobile element, the mobile element and a pair of associated electrodes of which are included in a cavity. An anchoring node of the mobile element is located at the level of the first main surface. The integrated circuit comprises a first elementary chip arranged at the level of the first main surface and electrically connected to the device with a mobile element.
Abstract translation: 集成电路包括具有相对的第一和第二主表面的支撑基板。 空腔通过支撑基板并连接第一和第二主表面。 集成电路包括具有移动元件的装置，移动元件和一对相关联的电极包括在空腔中。 移动元件的锚定节点位于第一主表面的水平面上。 集成电路包括布置在第一主表面的电平处的第一基本芯片，并与移动元件电连接到该装置。
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