公开(公告)号：US20080297292A1

公开(公告)日：2008-12-04

申请号：US11996332

申请日：2006-07-19

Applicant: Bernard Viala ,  Sandrine Couderc ,  Pascal Ancey

Inventor： Bernard Viala ,  Sandrine Couderc ,  Pascal Ancey

IPC: H01F10/12 ,  C23C14/46 ,  C23C14/35

CPC classification number: H01F10/007 ,  B82Y25/00 ,  H01F10/147 ,  H01F10/16 ,  H01F41/18 ,  H01F41/205 ,  H01F2017/0066 ,  H01P1/215

Abstract: A radiofrequency device may include an electrically conducting element associated with at least one continuous magnetic element. The first continuous magnetic element may include a substrate coated with a magnetic film having a granular structure, with grains that are inclined to the normal to the substrate, or a columnar texture inclined to the normal of the substrate.

Abstract translation: 射频装置可以包括与至少一个连续磁性元件相关联的导电元件。 第一连续磁性元件可以包括涂覆有具有颗粒结构的磁性膜的基底，其具有垂直于基底的晶粒或与基底的法线倾斜的柱状结构。

公开(公告)号：US20070212572A1

公开(公告)日：2007-09-13

申请号：US10591246

申请日：2005-02-25

Applicant: Yoshinori Tokura ,  Masashi Kawasaki ,  Hiroshi Akoh ,  Hiroyuki Yamada ,  Yuji Ishii ,  Hiroshi Sato ,  Yoshio Kaneko

Inventor： Yoshinori Tokura ,  Masashi Kawasaki ,  Hiroshi Akoh ,  Hiroyuki Yamada ,  Yuji Ishii ,  Hiroshi Sato ,  Yoshio Kaneko

IPC: H01L43/08

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11C11/16 ,  H01F1/407 ,  H01F10/3254 ,  H01F41/205 ,  H01L43/10 ,  Y10T428/1114

Abstract: A tunnel junction device capable of controlling its spin retention is provided. The tunnel junction device includes a La0.6Sr0.4MnO3-δ electrode (12), a La0.6Sr0.4Mn1-yRuyO3-δ electrode (14), both as ferromagnetic (including ferrimagnetic) metal materials, and a LaAlO3-δ (electrically insulating layer) (13) arranged between the two electrodes (12) and (14).

Abstract translation: 提供能够控制其自旋保留的隧道连接装置。 隧道结装置包括La 0.6 N 4 O 5 MnO 3-δ电极（12），La 0.6 N （14），均为铁磁性（包括（ⅲ）），（ⅲ） 铁氧体）金属材料和布置在两个电极（12）和（14）之间的LaAlO 3-δ（电绝缘层）（13）。

公开(公告)号：US20180247764A1

公开(公告)日：2018-08-30

申请号：US15967126

申请日：2018-04-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Keita MUNEUCHI ,  Eiji ISO ,  Isao IDA ,  Kenichi ARAKI ,  Noriko SHIMIZU ,  Takashi TOMOHIRO

IPC: H01F41/20 ,  H01F1/20 ,  H01F27/255 ,  H01F17/04 ,  H01F27/29 ,  H01F41/06 ,  B22F1/02 ,  H01F1/147

CPC classification number: H01F41/205 ,  B22F1/02 ,  B22F3/24 ,  B22F2998/10 ,  B22F2999/00 ,  C22C32/0094 ,  C22C2202/02 ,  H01F1/14733 ,  H01F1/20 ,  H01F1/22 ,  H01F17/0013 ,  H01F17/04 ,  H01F27/255 ,  H01F27/292 ,  H01F41/046 ,  H01F41/06 ,  H01F2017/0066 ,  H01F2017/048 ,  B22F1/0059 ,  B22F2003/248 ,  B22F2202/01

Abstract: An electronic component includes an element body made of a composite material of a resin material and metal powder. A plurality of particles of the metal powder are exposed from the resin material and make contact with one another on the outer surface of the element

公开(公告)号：US06941637B2

公开(公告)日：2005-09-13

申请号：US10092547

申请日：2002-03-08

Applicant: Hirotoshi Fukunaga ,  Masaki Nakano ,  Fumitoshi Yamashita

Inventor： Hirotoshi Fukunaga ,  Masaki Nakano ,  Fumitoshi Yamashita

IPC: C22C38/00 ,  H01F1/00 ,  H01F1/053 ,  H01F1/057 ,  H01F1/08 ,  H01F10/12 ,  H01F41/02 ,  H01F41/20 ,  H02K1/02 ,  H02K15/03 ,  H02K21/22 ,  H02K21/24 ,  H02K15/00 ,  H02K15/14 ,  H02K15/16

CPC classification number: H02K21/24 ,  H01F1/0027 ,  H01F1/057 ,  H01F10/126 ,  H01F41/205 ,  H02K1/02 ,  H02K15/03 ,  H02K21/22 ,  Y10T29/49009 ,  Y10T29/49012 ,  Y10T29/49075 ,  Y10T29/49078

Abstract: The method of manufacturing rare earth thick film magnet comprising a step of forming an alloy layer of 30-100 μm thick having a general formula RXBYTMZ on a substrate by a physical deposition process, and a step of heat-treating the alloy layer to form a thick film magnetic layer having R2TM14B phase as a main phase. In the general formula, R is at least one of rare earth elements, B is boron, TM is iron or its alloy partly substituted by cobalt. X is 0.1-0.2, Y is 0.05-0.2 and Z=1-X-Y. Further, the method of the present invention includes a step of laminating a plurality of alloy layers formed on a substrate together with the substrate. A motor comprising rare earth thick film magnet of the present invention is extremely small while obtaining high output.

Abstract translation: 制造稀土厚膜磁体的方法包括以下步骤：形成30-100μm厚的合金层，其具有通式为R 1，Y，Y，Z Z 通过物理沉积工艺在衬底上进行热处理，以及对合金层进行热处理以形成具有R 2 N 14 B的厚膜磁性层​​的步骤 相为主相。 在通式中，R是稀土元素中的至少一种，B是硼，TM是铁或其部分被钴取代的合金。 X为0.1-0.2，Y为0.05-0.2，Z = 1-X-Y。 此外，本发明的方法包括将与基板一起形成在基板上的多个合金层层叠的步骤。 包含本发明的稀土类厚膜磁体的马达极小，同时获得高输出。

公开(公告)号：US06488908B1

公开(公告)日：2002-12-03

申请号：US09652011

申请日：2000-08-31

Applicant: Tomoji Kawai ,  Hitoshi Tabata ,  Yuji Muraoka

Inventor： Tomoji Kawai ,  Hitoshi Tabata ,  Yuji Muraoka

IPC: C01G4900

CPC classification number: H01F41/205 ,  C23C14/08 ,  C30B23/002 ,  C30B23/02 ,  C30B29/26 ,  G11B7/00

Abstract: A substrate and a target are disposed within a vacuum chamber, and an oxygen partial pressure within the vacuum chamber is set to 1×10−5 or less. Under this condition, a spinel ferrite thin film selected from the group consisting of compounds represented by the formula AE1+tFe2−2tTMtO4, where AE represents an alkaline earth metal or an alkali metal, TM represents a transition metal and t falls within a range of between 0.2 and 0.6, and compounds represented by the formula Zn1−xCoxFe2O4, where x falls within a range of between 0.2 and 0.7, is deposited on the substrate by laser beam deposition. The particular method makes it possible to provide a spinel ferrite thin film realizing a spin glass state under temperatures around or higher than room temperature and capable of controlling the spin state by light.

Abstract translation: 将基板和靶设置在真空室内，真空室内的氧分压设定为1×10 -5以下。 在这种条件下，选自由式AE1 + tFe2-2tTMtO4表示的化合物组成的组的尖晶石铁氧体薄膜，其中AE表示碱土金属或碱金属，TM表示过渡金属，t落在 在0.2和0.6之间，通过激光束沉积在衬底上沉积由式Zn1-xCoxFe2O4表示的化合物，其中x落在0.2和0.7之间的范围内。 具体的方法使得可以提供在大约或高于室温的温度下实现旋转玻璃态的尖晶石铁氧体薄膜，并且能够通过光控制自旋状态。

公开(公告)号：US20020158534A1

公开(公告)日：2002-10-31

申请号：US10092547

申请日：2002-03-08

Inventor： Hirotoshi Fukunaga ,  Masaki Nakano ,  Fumitoshi Yamashita

IPC: H02K015/00

CPC classification number: H02K21/24 ,  H01F1/0027 ,  H01F1/057 ,  H01F10/126 ,  H01F41/205 ,  H02K1/02 ,  H02K15/03 ,  H02K21/22 ,  Y10T29/49009 ,  Y10T29/49012 ,  Y10T29/49075 ,  Y10T29/49078

Abstract: The method of manufacturing rare earth thick film magnet comprising a step of forming an alloy layer of 30-100 nullm thick having a general formula RXBYTMZ on a substrate by a physical deposition process, and a step of heat-treating the alloy layer to form a thick film magnetic layer having R2TM14B phase as a main phase. In the general formula, R is at least one of rare earth elements, B is boron, TM is iron or its alloy partly substituted by cobalt. X is 0.1-0.2, Y is 0.05-0.2 and Znull1nullXnullY. Further, the method of the present invention includes a step of laminating a plurality of alloy layers formed on a substrate together with the substrate. A motor comprising rare earth thick film magnet of the present invention is extremely small while obtaining high output.

Abstract translation: 制造稀土厚膜磁体的方法包括通过物理沉积工艺在基板上形成具有通式RXBYTMZ的具有通式RXBYTMZ的30-100μm厚的合金层的步骤，以及对合金层进行热处理以形成 以R2TM14B相为主相的厚膜磁性层​​。 在通式中，R是稀土元素中的至少一种，B是硼，TM是铁或其部分被钴取代的合金。 X为0.1-0.2，Y为0.05-0.2，Z = 1-X-Y。 此外，本发明的方法包括将与基板一起形成在基板上的多个合金层层叠的步骤。 包含本发明的稀土类厚膜磁体的马达极小，同时获得高输出。

公开(公告)号：US20160343482A1

公开(公告)日：2016-11-24

申请号：US15112458

申请日：2015-03-03

Applicant: JX NIPPON MINING & METALS CORPORATION

Inventor： Masaki Nakano ,  Hirotoshi Fukunaga ,  Takeshi Yanai ,  Masaru Itakura ,  Hironobu Sawatari

IPC: H01F1/00 ,  H01F41/02 ,  C23C14/16 ,  H01F1/053 ,  C23C14/28 ,  C23C14/58

CPC classification number: H01F1/0045 ,  C22C33/003 ,  C22C38/00 ,  C22C38/002 ,  C22C38/005 ,  C22C45/02 ,  C23C14/16 ,  C23C14/28 ,  C23C14/5806 ,  H01F1/053 ,  H01F10/126 ,  H01F41/0253 ,  H01F41/205

Abstract: The present invention provides a rare earth thin film magnet having Nd, Fe, and B as essential components, wherein the rare earth thin film magnet has a texture in which an α-Fe phase and a Nd2Fe14B phase are alternately arranged three-dimensionally, and each phase has an average crystal grain size of 10 to 30 nm. An object of this invention is to provide a rare earth thin film magnet having superior mass productivity and reproducibility and favorable magnetic properties, as well as to provide the production method thereof and a target for producing the thin film.

Abstract translation: 本发明提供一种以Nd，Fe，B为必要成分的稀土类薄膜磁铁，其特征在于稀土类薄膜磁铁具有三维交替配置α-Fe相和Nd2Fe14B相的结构， 各相的平均结晶粒径为10〜30nm。 本发明的目的是提供一种具有优异的批量生产率和再现性以及良好的磁性能的稀土类薄膜磁铁，以及提供其生产方法和制造该薄膜的目的。

公开(公告)号：US20160032490A1

公开(公告)日：2016-02-04

申请号：US14724459

申请日：2015-05-28

Applicant: BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM

Inventor： CHONGLIN CHEN ,  CHUNRUI MA ,  MING LIU

IPC: C30B33/02 ,  C30B29/22 ,  C30B23/02 ,  C30B33/00 ,  H01F1/10 ,  C30B23/06

CPC classification number: C30B33/02 ,  C01G45/1285 ,  C01G49/0054 ,  C01G51/68 ,  C01G53/68 ,  C01P2002/34 ,  C01P2002/72 ,  C30B23/025 ,  C30B29/22 ,  H01F10/1933 ,  H01F41/205 ,  H01L41/16

Abstract: A single-crystalline LnBM2O5+δ or LnBM2O5.5+δ compound is provided, which includes an ordered oxygen vacancy structure; wherein Ln is a lanthanide, B is an alkali earth metal, M is a transition metal, O is oxygen, and 0≦δ≦1. Methods of making and using the compound, and devices and compositions including same are also provided.

Abstract translation: 提供单晶LnBM2O5 +δ或LnBM2O5.5 +δ化合物，其包括有序氧空位结构; 其中Ln是镧系元素，B是碱土金属，M是过渡金属，O是氧，0和nlE;δ＆nlE; 1。 还提供了制备和使用该化合物的方法，以及包含它们的装置和组合物。

公开(公告)号：US08778701B2

公开(公告)日：2014-07-15

申请号：US13854665

申请日：2013-04-01

Applicant: Panasonic Corporation

Inventor： Akihiro Odagawa ,  Nozomu Matsukawa

IPC: H01L21/00

CPC classification number: H01L43/12 ,  H01F10/1936 ,  H01F41/205 ,  H01F41/30

Abstract: A production method of the present disclosure includes: a first step of preparing a multi-layer graphene, and an iron oxide that is a ferromagnetic material contacting the graphene and containing Fe3O4; and a second step of applying a voltage or a current between the graphene and the iron oxide with an electric potential of the graphene being positive relative to that of the iron oxide, so as to oxidize a part of the graphene or oxidize a part of the graphene and a part of Fe3O4, and thus to form a barrier layer composed of oxidized graphene or of oxidized graphene and Fe2O3 between the graphene and the iron oxide, and thereby forming a spin injection electrode that includes the graphene, the iron oxide, and the barrier layer located at an interface between the graphene and the iron oxide, and that allows spins to be injected into the graphene from the iron oxide via the barrier layer.

Abstract translation: 本公开的制备方法包括：制备多层石墨烯的第一步骤和与石墨烯接触并含有Fe 3 O 4的铁磁材料的氧化铁; 以及在所述石墨烯和所述氧化铁之间施加电压或电流的第二步骤，所述石墨烯的电位相对于所述氧化铁的电位为正，从而氧化所述一部分所述石墨烯或氧化所述石墨烯的一部分 石墨烯和Fe 3 O 4的一部分，从而在石墨烯和氧化铁之间形成由氧化石墨烯或氧化石墨烯和Fe 2 O 3组成的阻挡层，从而形成包括石墨烯，氧化铁和 阻挡层位于石墨烯和氧化铁之间的界面处，并且允许自旋通过阻挡层从氧化铁注入到石墨烯中。

公开(公告)号：US20130217151A1

公开(公告)日：2013-08-22

申请号：US13854665

申请日：2013-04-01

Applicant: PANASONIC CORPORATION

Inventor： Akihiro ODAGAWA ,  Nozomu MATSUKAWA

IPC: H01L43/12

CPC classification number: H01L43/12 ,  H01F10/1936 ,  H01F41/205 ,  H01F41/30

Abstract: A production method of the present disclosure includes: a first step of preparing a multi-layer graphene, and an iron oxide that is a ferromagnetic material contacting the graphene and containing Fe3O4; and a second step of applying a voltage or a current between the graphene and the iron oxide with an electric potential of the graphene being positive relative to that of the iron oxide, so as to oxidize a part of the graphene or oxidize a part of the graphene and a part of Fe3O4, and thus to form a barrier layer composed of oxidized graphene or of oxidized graphene and Fe2O3 between the graphene and the iron oxide, and thereby forming a spin injection electrode that includes the graphene, the iron oxide, and the barrier layer located at an interface between the graphene and the iron oxide, and that allows spins to be injected into the graphene from the iron oxide via the barrier layer.

Abstract translation: 本公开的制备方法包括：制备多层石墨烯的第一步骤和与石墨烯接触并含有Fe 3 O 4的铁磁材料的氧化铁; 以及在所述石墨烯和所述氧化铁之间施加电压或电流的第二步骤，所述石墨烯的电位相对于所述氧化铁的电位为正，从而氧化所述一部分所述石墨烯或氧化所述石墨烯的一部分 石墨烯和Fe 3 O 4的一部分，从而在石墨烯和氧化铁之间形成由氧化石墨烯或氧化石墨烯和Fe 2 O 3组成的阻挡层，从而形成包括石墨烯，氧化铁和 阻挡层位于石墨烯和氧化铁之间的界面处，并且允许自旋通过阻挡层从氧化铁注入到石墨烯中。