公开(公告)号：US11018009B2

公开(公告)日：2021-05-25

申请号：US16381776

申请日：2019-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Guoqiang Jian ,  Wei Tang ,  Chi-Chou Lin ,  Paul Ma ,  Yixiong Yang ,  Mei Chang ,  Wenyi Liu

IPC: H01L21/28 ,  H01L21/285 ,  H01L29/49 ,  H01L21/02 ,  H01L21/324 ,  H01L29/78 ,  H01L21/67 ,  H01L29/66

Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.

公开(公告)号：US20170084459A1

公开(公告)日：2017-03-23

申请号：US15268797

申请日：2016-09-19

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Wei Tang ,  Pramit Manna ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/033 ,  H01L21/02

CPC classification number: H01L21/0332 ,  H01L21/02153 ,  H01L21/02186 ,  H01L21/02227 ,  H01L21/02271 ,  H01L21/02274

Abstract: Methods for forming a titanium-containing hard mask film on a substrate surface by exposing the substrate surface to a titanium-containing precursor. The titanium-containing hard mask comprises one or more of silicon, oxygen or carbon atoms and, optionally, nitrogen atoms.

公开(公告)号：US09145612B2

公开(公告)日：2015-09-29

申请号：US13930194

申请日：2013-06-28

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Xinliang Lu ,  Shih Chung Chen ,  Wei Tang ,  Jing Zhou ,  Seshadri Ganguli ,  David Thompson ,  Jeffrey W. Anthis ,  Atif Noori ,  Faruk Gungor ,  Dien-Yeh Wu ,  Mei Chang ,  Xinyu Fu ,  Yu Lei

IPC: C23C18/00 ,  C23C16/08 ,  C23C16/18 ,  C23C16/455

CPC classification number: C23C18/00 ,  C23C16/08 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45553

Abstract: Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.

Abstract translation: 提供了沉积包括铝合金的膜的方法，其可以适合作为N-金属膜。 某些方法包括将衬底表面暴露于包含选自TiCl 4，TaCl 5和HfCl 4的金属卤化物的金属卤化物前体，以在衬底表面提供金属卤化物; 清洗金属卤化物; 将基材表面暴露于包含一种或多种二氢化铝氢化物，二乙基氢化铝，甲基二氢铝和式[（C x H y）3-a AlHa] n的烷基铝氢化物的烷基铝前体，其中x具有1至3的值，y 具有2x + 2的值，a具有1至2的值，并且n具有1至4的值; 并将基材表面暴露于含有二甲基乙基胺丙烷，甲基吡咯烷烃，二（甲基吡咯烷）甲烷和三甲基胺丙烷硼烷中的一种或多种的含Alane的前体。 其他方法包括将基底表面暴露于金属前体和三甲基胺丙烷硼烷。

公开(公告)号：US09082702B2

公开(公告)日：2015-07-14

申请号：US13771236

申请日：2013-02-20

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Srinivas Gandikota ,  Xinyu Fu ,  Wei Tang ,  Atif Noori

IPC: H01L21/3205 ,  H01L21/28 ,  H01L29/49 ,  H01L21/8238 ,  H01L29/51

CPC classification number: H01L21/28008 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/517

Abstract: Provided are devices and methods utilizing TiN and/or TaN films doped with Si, Al, Ga, Ge, In and/or Hf. Such films may be used as a high-k dielectric cap layer, PMOS work function layer, aluminum barrier layer, and/or fluorine barrier. These TiSiN, TaSiN, TiAlN, TaAlN, TiGaN, TaGaN, TiGeN, TaGeN, TiInN, TaInN, TiHfN or TaHfN films can be used where TiN and/or TaN films are traditionally used, or they may be used in conjunction with TiN and/or TaN.

Abstract translation: 提供了利用掺杂有Si，Al，Ga，Ge，In和/或Hf的TiN和/或TaN膜的器件和方法。 这种膜可以用作高k电介质盖层，PMOS功函数层，铝屏障层和/或氟屏障。 TiNN，TaSiN，TiAlN，TaAlN，TiGaN，TaGaN，TiGeN，TaGeN，TiInN，TaInN，TiHfN或TaHfN膜可以用于传统上使用TiN和/或TaN膜的场合，或者它们可以与TiN和/ 或TaN。

公开(公告)号：US20190341268A1

公开(公告)日：2019-11-07

申请号：US16400248

申请日：2019-05-01

Applicant: Applied Materials, Inc.

Inventor： Wenyu Zhang ,  Yixiong Yang ,  Mario D. Sanchez ,  Guoqiang Jian ,  Wei Tang ,  Paul F. Ma

IPC: H01L21/3213 ,  H01L29/49

Abstract: Processing methods comprising etching a metal nitride layer with an etchant. The etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of improving the selectivity of etch processes are also disclosed.

公开(公告)号：US10347488B2

公开(公告)日：2019-07-09

申请号：US15268797

申请日：2016-09-19

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Wei Tang ,  Pramit Manna ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/02 ,  H01L21/033

Abstract: Methods for forming a titanium-containing hard mask film on a substrate surface by exposing the substrate surface to a titanium-containing precursor. The titanium-containing hard mask comprises one or more of silicon, oxygen or carbon atoms and, optionally, nitrogen atoms.

公开(公告)号：US11646226B2

公开(公告)日：2023-05-09

申请号：US16871400

申请日：2020-05-11

Applicant: Applied Materials, Inc.

Inventor： Wenyi Liu ,  Wei Tang ,  Srinivas Gandikota ,  Yixiong Yang ,  Yong Wu ,  Jianqiu Guo ,  Arkaprava Dan ,  Mandyam Sriram

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76843 ,  H01L21/28556 ,  H01L21/28568

Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.

公开(公告)号：US11075276B2

公开(公告)日：2021-07-27

申请号：US16594596

申请日：2019-10-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Yongjing Lin ,  Shih Chung Chen ,  Naomi Yoshida ,  Lin Dong ,  Liqi Wu ,  Rongjun Wang ,  Steven Hung ,  Karla Bernal Ramos ,  Yixiong Yang ,  Wei Tang ,  Sang-Ho Yu

IPC: H01L29/49 ,  H01L29/40 ,  H01L21/285 ,  H01L21/02

Abstract: Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.

公开(公告)号：US08987080B2

公开(公告)日：2015-03-24

申请号：US13865285

申请日：2013-04-18

Applicant: Applied Materials, Inc.

Inventor： Xinliang Lu ,  Seshadri Ganguli ,  Atif Noori ,  Maitreyee Mahajani ,  Shih Chung Chen ,  Yu Lei ,  Xinyu Fu ,  Wei Tang ,  Srinivas Gandikota

IPC: H01L21/336 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/28 ,  H01L21/322 ,  H01L29/49 ,  H01L29/78

CPC classification number: H01L29/66477 ,  H01L21/28088 ,  H01L21/3221 ,  H01L21/823821 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/78

Abstract: Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.

Abstract translation: 提供了适用于FinFET结构的金属栅极的方法。 本文描述的方法通常涉及在半导体衬底上形成高k电介质材料; 在高k电介质材料上沉积高k电介质盖层; 沉积具有正功函数值的PMOS功函数层; 沉积NMOS工作功能层; 在NMOS工作功能层上沉积NMOS工作功能覆盖层; 去除所述PMOS功函数层的至少一部分或所述NMOS功函数层的至少一部分; 并沉积填充层。 沉积高k电介质盖层，沉积PMOS功函数层或沉积NMOS工作功能覆盖层可包括TiN，TiSiN或TiAlN的原子层沉积。 可以首先沉积PMOS或NMOS。

公开(公告)号：US09683287B2

公开(公告)日：2017-06-20

申请号：US14058406

申请日：2013-10-21

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Srinivas Gandikota ,  Xinliang Lu ,  Wei Tang ,  Jing Zhou ,  Seshadri Ganguli ,  Jeffrey W. Anthis ,  Atif Noori ,  Faruk Gungor ,  Dien-Yeh Wu ,  Mei Chang ,  Shih Chung Chen

IPC: C23C16/12 ,  C23C16/30 ,  C23C16/455

CPC classification number: C23C16/30 ,  C23C16/45531 ,  C23C16/45534

Abstract: Films comprising Aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and the film has less than about 50% carbon. Methods of forming the films comprise exposing a substrate to a metal halide precursor, purging the metal halide precursor from the processing chamber and then exposing the substrate to an alkyl aluminum precursor and an alane precursor, either sequentially or simultaneously. The alane precrursor comprises an amine-alane and a stabilizing amine selected from one or more of diemthylcyclohexylamine or dicyclomethylhexylamine.