公开(公告)号：USRE48994E1

公开(公告)日：2022-03-29

申请号：US16432928

申请日：2019-06-06

申请人： Applied Materials, Inc.

发明人： Joseph Yudovsky ,  Mei Chang ,  Faruk Gungor ,  Paul F. Ma ,  David Chu ,  Chien-Teh Kao ,  Hyman W. H. Lam ,  Dien-Yeh Wu

IPC分类号： C23C16/455 ,  C23C16/44 ,  F17D3/00

摘要： Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

公开(公告)号：USRE47440E1

公开(公告)日：2019-06-18

申请号：US15678883

申请日：2017-08-16

申请人： Applied Materials, Inc.

发明人： Joseph Yudovsky ,  Mei Chang ,  Faruk Gungor ,  Paul F. Ma ,  David Chu ,  Chien-Teh Kao ,  Hyman Lam ,  Dien-Yeh Wu

IPC分类号： F17D3/00 ,  F16K11/20

摘要： Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

公开(公告)号：US11598003B2

公开(公告)日：2023-03-07

申请号：US15702234

申请日：2017-09-12

申请人： APPLIED MATERIALS, INC.

发明人： Faruk Gungor ,  Dien-Yeh Wu ,  Joel M. Huston ,  Mei Chang ,  Xiaoxiong Yuan ,  Kazuya Daito ,  Avgerinos V. Gelatos ,  Takashi Kuratomi ,  Yu Chang ,  Bin Cao

IPC分类号： C23C16/455 ,  C23C16/505 ,  C23C16/46 ,  C23C16/458

摘要： Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.

公开(公告)号：US10175093B2

公开(公告)日：2019-01-08

申请号：US15179864

申请日：2016-06-10

申请人： APPLIED MATERIALS, INC.

发明人： Faruk Gungor

IPC分类号： C23C16/448 ,  G01H13/00 ,  G01P15/09 ,  G01H9/00 ,  G01F23/28

摘要： Embodiments of apparatus for sensing a level of a processing medium in a chemical delivery apparatus are provided herein. In some embodiments, a chemical delivery apparatus includes: a support structure; a container coupled to the support structure to hold a chemical precursor within an interior of the container; an excitation source configured to cause vibrations in an exterior surface of the container; and a measurement device configured to measure a frequency of the vibrations.

公开(公告)号：US20180122647A1

公开(公告)日：2018-05-03

申请号：US15802040

申请日：2017-11-02

申请人： Applied Materials, Inc.

发明人： Takashi Kuratomi ,  Avgerinos V. Gelatos ,  I-Cheng Chen ,  Faruk Gungor

IPC分类号： H01L21/285 ,  C23C16/06 ,  C23C16/50 ,  C23C16/455

CPC分类号： H01L21/28568 ,  C23C16/04 ,  C23C16/06 ,  C23C16/14 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/67167

摘要： Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.

公开(公告)号：US09683287B2

公开(公告)日：2017-06-20

申请号：US14058406

申请日：2013-10-21

申请人： Applied Materials, Inc.

发明人： David Thompson ,  Srinivas Gandikota ,  Xinliang Lu ,  Wei Tang ,  Jing Zhou ,  Seshadri Ganguli ,  Jeffrey W. Anthis ,  Atif Noori ,  Faruk Gungor ,  Dien-Yeh Wu ,  Mei Chang ,  Shih Chung Chen

IPC分类号： C23C16/12 ,  C23C16/30 ,  C23C16/455

CPC分类号： C23C16/30 ,  C23C16/45531 ,  C23C16/45534

摘要： Films comprising Aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and the film has less than about 50% carbon. Methods of forming the films comprise exposing a substrate to a metal halide precursor, purging the metal halide precursor from the processing chamber and then exposing the substrate to an alkyl aluminum precursor and an alane precursor, either sequentially or simultaneously. The alane precrursor comprises an amine-alane and a stabilizing amine selected from one or more of diemthylcyclohexylamine or dicyclomethylhexylamine.

公开(公告)号：US11380557B2

公开(公告)日：2022-07-05

申请号：US15613855

申请日：2017-06-05

申请人： APPLIED MATERIALS, INC.

发明人： Vincent Kirchhoff ,  Faruk Gungor ,  Felix Rabinovich ,  Gary Keppers

IPC分类号： H01L21/48 ,  H01L21/67 ,  C23C16/455 ,  H01J37/32 ,  H01L23/367

摘要： Embodiments of an apparatus for gas delivery in a semiconductor processing system use a gas distribution plate that has a plurality of gas passageways where the passageways have surfaces with an average roughness of less than or equal to approximately 10 Ra. In some embodiments, the gas distribution plate has one or more internal fluid passageways that are capable of being fluidly coupled to one or more fluid sources to provide temperature control of the gas distribution plate. In some embodiments, the gas distribution plate has at least one internal cavity with at least one heatsink that may surround at least one of the plurality of gas passageways to provide, at least partial, temperature control of the gas distribution plate.

公开(公告)号：US10418246B2

公开(公告)日：2019-09-17

申请号：US15802040

申请日：2017-11-02

申请人： Applied Materials, Inc.

发明人： Takashi Kuratomi ,  Avgerinos V. Gelatos ,  I-Cheng Chen ,  Faruk Gungor

IPC分类号： H01L21/285 ,  C23C16/06 ,  C23C16/455 ,  C23C16/50 ,  C23C16/04 ,  C23C16/14 ,  C23C16/452 ,  H01J37/00 ,  H01L21/3205 ,  H01L21/67

摘要： Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.

公开(公告)号：US20180350627A1

公开(公告)日：2018-12-06

申请号：US15613855

申请日：2017-06-05

申请人： APPLIED MATERIALS, INC.

发明人： Vincent Kirchhoff ,  Faruk Gungor ,  Felix Rabinovich ,  Gary Keppers

IPC分类号： H01L21/48 ,  H01L21/67 ,  C23C16/455 ,  H01L21/311 ,  F16K37/00

摘要： Embodiments of an apparatus for gas delivery in a semiconductor processing system use a gas distribution plate that has a plurality of gas passageways where the passageways have surfaces with an average roughness of less than or equal to approximately 10 Ra. In some embodiments, the gas distribution plate has one or more internal fluid passageways that are capable of being fluidly coupled to one or more fluid sources to provide temperature control of the gas distribution plate. In some embodiments, the gas distribution plate has at least one internal cavity with at least one heatsink that may surround at least one of the plurality of gas passageways to provide, at least partial, temperature control of the gas distribution plate.

公开(公告)号：US09109754B2

公开(公告)日：2015-08-18

申请号：US13653952

申请日：2012-10-17

申请人： Applied Materials, Inc.

发明人： Joseph Yudovsky ,  Mei Chang ,  Faruk Gungor ,  Paul F. Ma ,  David Chu ,  Chien-Teh Kao ,  Hyman Lam ,  Dien-Yeh Wu

IPC分类号： F16K11/20 ,  F17D3/00

CPC分类号： F17D3/00 ,  Y10T137/7833

摘要： Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

摘要翻译： 提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源，出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备，缠绕在一起的螺旋输送通道，分流输送通道，合并输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。