公开(公告)号：US20200243341A1

公开(公告)日：2020-07-30

申请号：US16835279

申请日：2020-03-30

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Wei V. Tang ,  Jianqiu Guo ,  Wenyi Liu ,  Yixiong Yang ,  Jacqueline S. Wrench ,  Mandyam Sriram ,  Srinivas Gandikota ,  Yumin He

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3205

Abstract: In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.

公开(公告)号：US11646226B2

公开(公告)日：2023-05-09

申请号：US16871400

申请日：2020-05-11

Applicant: Applied Materials, Inc.

Inventor： Wenyi Liu ,  Wei Tang ,  Srinivas Gandikota ,  Yixiong Yang ,  Yong Wu ,  Jianqiu Guo ,  Arkaprava Dan ,  Mandyam Sriram

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76843 ,  H01L21/28556 ,  H01L21/28568

Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.

公开(公告)号：US11018009B2

公开(公告)日：2021-05-25

申请号：US16381776

申请日：2019-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Guoqiang Jian ,  Wei Tang ,  Chi-Chou Lin ,  Paul Ma ,  Yixiong Yang ,  Mei Chang ,  Wenyi Liu

IPC: H01L21/28 ,  H01L21/285 ,  H01L29/49 ,  H01L21/02 ,  H01L21/324 ,  H01L29/78 ,  H01L21/67 ,  H01L29/66

Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.

公开(公告)号：US20210134593A1

公开(公告)日：2021-05-06

申请号：US17147097

申请日：2021-01-12

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Wenyi Liu

IPC: H01L21/02 ,  C23C16/04 ,  H01L21/321

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a carboxylic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, a hydrazide is exposed to a substrate to selectively form a blocking layer. In some embodiments, an alkyl phosphonic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, the alkyl phosphonic acid is formed in-situ and exposed to the substrate. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed.

公开(公告)号：US10991586B2

公开(公告)日：2021-04-27

申请号：US16835279

申请日：2020-03-30

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Wei V. Tang ,  Jianqiu Guo ,  Wenyi Liu ,  Yixiong Yang ,  Jacqueline S. Wrench ,  Mandyam Sriram ,  Srinivas Gandikota ,  Yumin He

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/3205 ,  H01L21/02

Abstract: In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.

公开(公告)号：US11515156B2

公开(公告)日：2022-11-29

申请号：US17147097

申请日：2021-01-12

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Wenyi Liu

IPC: H01L21/02 ,  C23C16/04 ,  H01L21/321 ,  H01L21/32

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a carboxylic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, a hydrazide is exposed to a substrate to selectively form a blocking layer. In some embodiments, an alkyl phosphonic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, the alkyl phosphonic acid is formed in-situ and exposed to the substrate. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed.

公开(公告)号：US10892157B2

公开(公告)日：2021-01-12

申请号：US16229659

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Wenyi Liu

IPC: H01L21/02 ,  H01L21/321 ,  H01L21/32 ,  C23C16/04

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a carboxylic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, a hydrazide is exposed to a substrate to selectively form a blocking layer. In some embodiments, an alkyl phosphonic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, the alkyl phosphonic acid is formed in-situ and exposed to the substrate. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed.

公开(公告)号：US20190198318A1

公开(公告)日：2019-06-27

申请号：US16229659

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Wenyi Liu

IPC: H01L21/02 ,  C23C16/04

CPC classification number: H01L21/02312 ,  C23C16/04 ,  H01L21/0217 ,  H01L21/02271

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a carboxylic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, a hydrazide is exposed to a substrate to selectively form a blocking layer. In some embodiments, an alkyl phosphonic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, the alkyl phosphonic acid is formed in-situ and exposed to the substrate. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed.