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    Adaptive control of wafer-to-wafer variability in device performance in advanced semiconductor processes
    1.
    发明授权
    Adaptive control of wafer-to-wafer variability in device performance in advanced semiconductor processes 有权

    公开(公告)号：US10930531B2

    公开(公告)日：2021-02-23

    申请号：US16155779

    申请日：2018-10-09

    Applicant: Applied Materials, Inc.

    Inventor： Samer Banna ,  Lior Engel ,  Dermot Cantwell

    IPC: H01L21/67 ,  H01J37/32 ,  H01L21/66 ,  G05B13/02 ,  G05B13/04

    Abstract: Systems and methods for controlling device performance variability during manufacturing of a device on wafers are disclosed. The system includes a process platform, on-board metrology (OBM) tools, and a first server that stores a machine-learning based process control model. The first server combines virtual metrology (VM) data and OBM data to predict a spatial distribution of one or more dimensions of interest on a wafer. The system further comprises an in-line metrology tool, such as SEM, to measure the one or more dimensions of interest on a subset of wafers sampled from each lot. A second server having a machine-learning engine receives from the first server the predicted spatial distribution of the one or more dimensions of interest based on VM and OBM, and also receives SEM metrology data, and updates the process control model periodically (e.g., wafer-to-wafer, lot-to-lot, chamber-to-chamber etc.) using machine learning techniques.

    Metrology systems with multiple derivative modules for substrate stress and deformation measurement
    2.
    发明授权
    Metrology systems with multiple derivative modules for substrate stress and deformation measurement 有权

    公开(公告)号：US10510624B2

    公开(公告)日：2019-12-17

    申请号：US16080102

    申请日：2017-03-09

    Applicant: Applied Materials, Inc.

    Inventor： Mehdi Vaez-Iravani ,  Todd Egan ,  Samer Banna ,  Kyle Tantiwong

    IPC: G01B11/24 ,  H01L21/66 ,  G02B27/12

    Abstract: Embodiments of the disclosure provide a metrology system. In one example, a metrology system includes a laser source adapted to transmit a light beam, a lens adapted to receive at least a portion of the light beam from the laser source, a first beam splitter positioned to receive at least the portion of the light beam passing through the lens, a first beam displacing device adapted to cause a portion of the light beam received from the beam splitter to be split into two or more sub-light beams a first recording device having a detection surface, and a first polarizer that is positioned between the first displacing device and the first recording device, wherein the first polarizer is configured to cause the two or more sub-light beams provided from the first displacing device to form an interference pattern on the detection surface of the first recording device.

    Embedded test structure for trimming process control
    3.
    发明授权
    Embedded test structure for trimming process control 有权
    用于修整过程控制的嵌入式测试结构

    公开(公告)号：US08956886B2

    公开(公告)日：2015-02-17

    申请号：US14204668

    申请日：2014-03-11

    Applicant: Applied Materials, Inc.

    Inventor： Samer Banna ,  Olivier Joubert ,  Lei Lian ,  Maxime Darnon ,  Nicolas Posseme ,  Laurent Vallier

    IPC: H01L21/00 ,  H01L21/66 ,  H01L21/311 ,  H01L21/027 ,  H01L21/67 ,  H01L21/308 ,  H01L21/3213 ,  G03F7/20

    CPC classification number: H01L22/26 ,  G03F7/70625 ,  H01L21/0273 ,  H01L21/3086 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/20

    Abstract: In some embodiments, a method of controlling a photoresist trimming process in a semiconductor manufacturing process may include forming a photoresist layer atop a first surface of a substrate, wherein the photoresist layer comprises a lower layer having a first pattern to be etched into the first surface of the substrate, and an upper layer having a second pattern that is not etched into the first surface of the substrate; trimming the photoresist layer in a direction parallel to the first surface of the substrate; measuring a trim rate of the second pattern using an optical measuring tool during the trimming process; and correlating the trim rate of the second pattern to a trim rate of the first pattern to control the trim rate of the first pattern during the trimming process.

    Abstract translation: 在一些实施例中，在半导体制造工艺中控制光致抗蚀剂修剪工艺的方法可以包括在衬底的第一表面之上形成光致抗蚀剂层，其中光致抗蚀剂层包括具有要蚀刻到第一表面中的第一图案的下层 以及具有未蚀刻到所述基板的第一表面中的第二图案的上层; 在平行于基板的第一表面的方向上修整光致抗蚀剂层; 在修整过程中使用光学测量工具测量第二图案的修剪率; 以及将所述第二图案的修整率与所述第一图案的修剪率相关联，以在所述修整处理期间控制所述第一图案的修整率。

    Methods for reducing etch nonuniformity in the presence of a weak magnetic field in an inductively coupled plasma reactor
    7.
    发明授权
    Methods for reducing etch nonuniformity in the presence of a weak magnetic field in an inductively coupled plasma reactor 有权
    在电感耦合等离子体反应器中存在弱磁场的情况下减少蚀刻不均匀的方法

    公开(公告)号：US09257265B2

    公开(公告)日：2016-02-09

    申请号：US14206723

    申请日：2014-03-12

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Alvaro Garcia De Gorordo ,  Waheb Bishara ,  Samer Banna

    IPC: H01L21/66 ,  H01J37/32

    CPC classification number: H01J37/3266 ,  H01J37/321 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, a method is provided for processing a substrate in a process chamber having a plurality of electromagnets disposed about the process chamber to form a magnetic field within the process chamber at least at a substrate level. In some embodiments, the method includes determining a first direction of an external magnetic field present within the process chamber while providing no current to the plurality of electromagnets; providing a range of currents to the plurality of electromagnets to create a magnetic field within the process chamber having a second direction opposing the first direction; determining a desired magnitude in the second direction of the magnetic field over the range of currents; and processing a substrate in the process chamber using a plasma while statically providing the magnetic field at the desired magnitude.

    Abstract translation: 本文提供了等离子体增强基板处理的方法和装置。 在一些实施例中，提供了一种用于处理处理室中的基板的方法，该处理室具有设置在处理室周围的多个电磁体，以至少在基板层处在处理室内形成磁场。 在一些实施例中，该方法包括确定处理室内存在的外部磁场的第一方向，同时不向多个电磁体提供电流; 向所述多个电磁体提供一定范围的电流以在所述处理室内产生具有与所述第一方向相反的第二方向的磁场; 在电流范围内确定磁场的第二方向上的期望幅度; 以及使用等离子体处理处理室中的衬底，同时静态地将所述磁场提供到期望的大小。

    MULTI-ZONE GAS INJECTION ASSEMBLY WITH AZIMUTHAL AND RADIAL DISTRIBUTION CONTROL
    8.
    发明申请
    MULTI-ZONE GAS INJECTION ASSEMBLY WITH AZIMUTHAL AND RADIAL DISTRIBUTION CONTROL 有权
    多区域气体注入装置与三角形和径向分布控制

    公开(公告)号：US20150371831A1

    公开(公告)日：2015-12-24

    申请号：US14762219

    申请日：2014-02-03

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Yan Rozenzon ,  Kyle Tantiwong ,  Imad Yousif ,  Vladimir Knyazik ,  Bojenna Keating ,  Samer Banna

    IPC: H01J37/32

    CPC classification number: H01J37/32449 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45578 ,  H01J37/3244

    Abstract: A gas injection system includes (a) a side gas plenum, (b) a plurality of N gas inlets coupled to said side gas plenum, (c) plural side gas outlets extending radially inwardly from said plenum, (d) an N-way gas flow ratio controller having N outputs coupled to said N gas inlets respectively, and (e) an M-way gas flow ratio controller having M outputs, respective ones of said M outputs coupled to said tunable gas nozzle and a gas input of said N-way gas flow ratio controller.

    Abstract translation: 气体注入系统包括（a）侧气室，（b）多个与所述侧气室连通的N个气体入口，（c）从所述气室径向向内延伸的多个侧气体出口，（d）N路 具有分别与所述N个气体入口相连的N个输出的气体流量比控制器，以及（e）具有M个输出的M路气体流量比控制器，耦合到所述可调气体喷嘴的所述M个输出中的相应的M个输出端和所述N个气体入口 - 天然气流量比控制器。

    All-in-one bioreactor for therapeutic cells manufacturing
    10.
    发明授权
    All-in-one bioreactor for therapeutic cells manufacturing 有权

    公开(公告)号：US11781100B2

    公开(公告)日：2023-10-10

    申请号：US17111359

    申请日：2020-12-03

    Applicant: Applied Materials, Inc.

    Inventor： Samer Banna ,  Mukhles Sowwan ,  Gary E. Dickerson

    IPC: C12M3/00 ,  C12M1/00

    CPC classification number: C12M23/44 ,  C12M23/26 ,  C12M23/58 ,  C12M29/18

    Abstract: Methods and apparatus of bioreactors for therapeutic cells manufacturing are provided herein. In some embodiments, a bioreactor includes: an upper bioreactor reservoir configured to perform multiple cell therapy manufacturing process steps including genetic modification and expansion to a plurality of cells disposed therein, wherein the upper bioreactor reservoir includes a plurality of ports for delivering fluids into and out of the upper bioreactor reservoir; a lower bioreactor compartment configured to hold a suspension comprising a molecular species; and a membrane disposed between the lower bioreactor compartment and the upper bioreactor reservoir, wherein the membrane includes a plurality of micro-straws extending through the membrane and into the upper bioreactor reservoir to transfect the plurality of cells with the molecular species.

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