公开(公告)号：US11646183B2

公开(公告)日：2023-05-09

申请号：US16825466

申请日：2020-03-20

Applicant: Applied Materials, Inc.

Inventor： Stephen Donald Prouty ,  Alvaro Garcia De Gorordo ,  Andreas Schmid ,  Andrew Antoine Noujaim

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32798 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67069 ,  H01L21/6833 ,  H01J2237/002 ,  H01J2237/2007 ,  H01J2237/334

Abstract: Semiconductor chamber components are described herein that includes one or more conduits for carrying a fluid between powered and grounded portions of the chamber component, the conduit configure to be less prone to arcing as compared to conventional components. In one example, a semiconductor chamber component is provided that includes a powered region, a grounded region, and a fluid conduit. The fluid conduit is disposed within the semiconductor chamber component and passes through the powered and grounded regions. The fluid conduit has an end to end electrical resistance of between 0.1 to 100 MΩ.

公开(公告)号：US11996294B2

公开(公告)日：2024-05-28

申请号：US17983560

申请日：2022-11-09

Applicant: Applied Materials, Inc.

Inventor： Alvaro Garcia De Gorordo ,  Zhonghua Yao ,  Sunil Srinivasan ,  Sang Wook Park

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01L21/02112 ,  H01L21/02263 ,  H01L21/0234 ,  H01L21/02348 ,  B81C2201/0138 ,  H01L21/0228 ,  H01L21/30655 ,  H01L21/31116

Abstract: The present disclosure generally relates to substrate processing methods, such as etching methods with noble gases at low temperatures. In an aspect, the method includes exposing a substrate, a first layer comprising a gas, and a fluorine-containing layer to energy to form a passivation layer while maintaining the substrate at conditions encompassing a triple point temperature of the gas, the substrate positioned in a processing region of a processing chamber. The method further includes etching the substrate with ions.

公开(公告)号：US11373893B2

公开(公告)日：2022-06-28

申请号：US16997300

申请日：2020-08-19

Applicant: Applied Materials, Inc.

Inventor： Yogananda Sarode Vishwanath ,  Steven E. Babayan ,  Stephen Donald Prouty ,  Alvaro Garcia De Gorordo ,  Andreas Schmid ,  Andrew Antoine Noujaim

IPC: H01L21/683 ,  H01J37/32

Abstract: Embodiments described herein relate to a substrate support assembly which enables a cryogenic temperature operation of an electrostatic chuck (ESC) so that a substrate disposed thereon is maintained at a cryogenic processing temperature suitable for processing while other surfaces of a processing chamber are maintained at a different temperature. The substrate support assembly includes an electrostatic chuck (ESC), an ESC base assembly coupled to the ESC having a base channel disposed therein, and a facility plate having a facility channel disposed therein. The facility plate includes a plate portion and a wall portion. The plate portion is coupled to the ESC base assembly and the wall portion coupled to the ESC with a seal assembly. A vacuum region is defined by the ESC, the ESC base assembly, the plate portion of the facility plate, the wall portion of the facility plate, and the seal assembly.

公开(公告)号：US11764041B2

公开(公告)日：2023-09-19

申请号：US16901797

申请日：2020-06-15

Applicant: Applied Materials, Inc.

Inventor： Alvaro Garcia De Gorordo ,  Daniel Sang Byun ,  Andreas Schmid ,  Stephen Donald Prouty ,  Andrew Antoine Noujaim

IPC: H01J37/32 ,  H01L21/683 ,  C23C16/46 ,  C23C16/458

CPC classification number: H01J37/32724 ,  C23C16/4581 ,  C23C16/466 ,  H01J37/321 ,  H01L21/6833 ,  H01J2237/002 ,  H01J2237/3341

Abstract: Embodiments described herein relate to a substrate support assembly which enables adjustment of the thermal conductivity therein. The substrate support assembly has heater and cooling channel. An adjustable thermal break disposed between the heater and the cooling channel. The adjustable thermal break has one or more fluid conduits coupled thereto and configured to flow a fluid into and out of the adjustable thermal break for variant the thermal conductivity between the heater and the cooling channel.

公开(公告)号：US11087989B1

公开(公告)日：2021-08-10

申请号：US16905246

申请日：2020-06-18

Applicant: Applied Materials, Inc.

Inventor： Alvaro Garcia De Gorordo ,  Zhonghua Yao ,  Sunil Srinivasan ,  Sang Wook Park

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/311

Abstract: A method for etching silicon at cryogenic temperatures is provided. The method includes forming an inert layer from condensation of a noble gas at cryogenic temperatures on exposed surfaces such as the sidewalls of a feature to passivate the sidewalls prior to the etching process. The method further includes flowing a fluorine-containing precursor gas into the chamber to form a fluorine-containing layer on the inert layer. The method further includes exposing the fluorine-containing layer and the inert layer to an energy source to form a passivation layer on the exposed portions of the substrate and exposing the substrate to ions to etch the substrate.

公开(公告)号：US11515166B2

公开(公告)日：2022-11-29

申请号：US17371176

申请日：2021-07-09

Applicant: Applied Materials, Inc.

Inventor： Alvaro Garcia De Gorordo ,  Zhonghua Yao ,  Sunil Srinivasan ,  Sang Wook Park

IPC: H01L21/306 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/311

Abstract: A method for etching silicon at cryogenic temperatures is provided. The method includes forming an inert layer from condensation of a noble gas at cryogenic temperatures on exposed surfaces such as the sidewalls of a feature to passivate the sidewalls prior to the etching process. The method further includes flowing a fluorine-containing precursor gas into the chamber to form a fluorine-containing layer on the inert layer. The method further includes exposing the fluorine-containing layer and the inert layer to an energy source to form a passivation layer on the exposed portions of the substrate and exposing the substrate to ions to etch the substrate.

公开(公告)号：US09257265B2

公开(公告)日：2016-02-09

申请号：US14206723

申请日：2014-03-12

Applicant: APPLIED MATERIALS, INC.

Inventor： Alvaro Garcia De Gorordo ,  Waheb Bishara ,  Samer Banna

IPC: H01L21/66 ,  H01J37/32

CPC classification number: H01J37/3266 ,  H01J37/321 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, a method is provided for processing a substrate in a process chamber having a plurality of electromagnets disposed about the process chamber to form a magnetic field within the process chamber at least at a substrate level. In some embodiments, the method includes determining a first direction of an external magnetic field present within the process chamber while providing no current to the plurality of electromagnets; providing a range of currents to the plurality of electromagnets to create a magnetic field within the process chamber having a second direction opposing the first direction; determining a desired magnitude in the second direction of the magnetic field over the range of currents; and processing a substrate in the process chamber using a plasma while statically providing the magnetic field at the desired magnitude.

Abstract translation: 本文提供了等离子体增强基板处理的方法和装置。 在一些实施例中，提供了一种用于处理处理室中的基板的方法，该处理室具有设置在处理室周围的多个电磁体，以至少在基板层处在处理室内形成磁场。 在一些实施例中，该方法包括确定处理室内存在的外部磁场的第一方向，同时不向多个电磁体提供电流; 向所述多个电磁体提供一定范围的电流以在所述处理室内产生具有与所述第一方向相反的第二方向的磁场; 在电流范围内确定磁场的第二方向上的期望幅度; 以及使用等离子体处理处理室中的衬底，同时静态地将所述磁场提供到期望的大小。