Metrology systems with multiple derivative modules for substrate stress and deformation measurement

    公开(公告)号:US10510624B2

    公开(公告)日:2019-12-17

    申请号:US16080102

    申请日:2017-03-09

    IPC分类号: G01B11/24 H01L21/66 G02B27/12

    摘要: Embodiments of the disclosure provide a metrology system. In one example, a metrology system includes a laser source adapted to transmit a light beam, a lens adapted to receive at least a portion of the light beam from the laser source, a first beam splitter positioned to receive at least the portion of the light beam passing through the lens, a first beam displacing device adapted to cause a portion of the light beam received from the beam splitter to be split into two or more sub-light beams a first recording device having a detection surface, and a first polarizer that is positioned between the first displacing device and the first recording device, wherein the first polarizer is configured to cause the two or more sub-light beams provided from the first displacing device to form an interference pattern on the detection surface of the first recording device.

    MULTI-ZONE GAS INJECTION ASSEMBLY WITH AZIMUTHAL AND RADIAL DISTRIBUTION CONTROL
    3.
    发明申请
    MULTI-ZONE GAS INJECTION ASSEMBLY WITH AZIMUTHAL AND RADIAL DISTRIBUTION CONTROL 有权
    多区域气体注入装置与三角形和径向分布控制

    公开(公告)号:US20150371831A1

    公开(公告)日:2015-12-24

    申请号:US14762219

    申请日:2014-02-03

    IPC分类号: H01J37/32

    摘要: A gas injection system includes (a) a side gas plenum, (b) a plurality of N gas inlets coupled to said side gas plenum, (c) plural side gas outlets extending radially inwardly from said plenum, (d) an N-way gas flow ratio controller having N outputs coupled to said N gas inlets respectively, and (e) an M-way gas flow ratio controller having M outputs, respective ones of said M outputs coupled to said tunable gas nozzle and a gas input of said N-way gas flow ratio controller.

    摘要翻译: 气体注入系统包括(a)侧气室,(b)多个与所述侧气室连通的N个气体入口,(c)从所述气室径向向内延伸的多个侧气体出口,(d)N路 具有分别与所述N个气体入口相连的N个输出的气体流量比控制器,以及(e)具有M个输出的M路气体流量比控制器,耦合到所述可调气体喷嘴的所述M个输出中的相应的M个输出端和所述N个气体入口 - 天然气流量比控制器。

    GAS HUB FOR PLASMA REACTOR
    4.
    发明申请

    公开(公告)号:US20220157562A1

    公开(公告)日:2022-05-19

    申请号:US17590681

    申请日:2022-02-01

    IPC分类号: H01J37/32 C23C16/455

    摘要: A gas distribution hub for a plasma chamber. The hub has a nozzle including a plurality of inner gas injection passage and a plurality of outer gas injection passages. The first plurality of gas injection passages are angularly spaced-apart arcuate channels at a first radial distance from a center of the hub, and the second plurality of gas injection passages are angularly spaced apart arcuate channels at a different second radial distance from the center of the hub

    Particle detection for substrate processing

    公开(公告)号:US11119051B2

    公开(公告)日:2021-09-14

    申请号:US17062231

    申请日:2020-10-02

    摘要: A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.

    Multi-zone heated ESC with independent edge zones

    公开(公告)号:US10332772B2

    公开(公告)日:2019-06-25

    申请号:US14762796

    申请日:2014-03-10

    摘要: An electrostatic chuck (ESC) with a cooling base for plasma processing chambers, such as a plasma etch chamber. In embodiments, a plasma processing chuck includes a plurality of independent edge zones. In embodiments, the edge zones are segments spanning different azimuth angles of the chuck to permit independent edge temperature tuning, which may be used to compensate for other chamber related non-uniformities or incoming wafer non-uniformities. In embodiments, the chuck includes a center zone having a first heat transfer fluid supply and control loop, and a plurality of edge zones, together covering the remainder of the chuck area, and each having separate heat transfer fluid supply and control loops. In embodiments, the base includes a diffuser, which may have hundreds of small holes over the chuck area to provide a uniform distribution of heat transfer fluid.