公开(公告)号：US10115566B2

公开(公告)日：2018-10-30

申请号：US15437757

申请日：2017-02-21

申请人： APPLIED MATERIALS, INC.

发明人： Steven Lane ,  Tza-Jing Gung ,  Kartik Ramaswamy ,  Travis Koh ,  Joseph F. Aubuchon ,  Yang Yang

IPC分类号： H01J37/32

摘要： Methods and apparatus for controlling a magnetic field in a plasma chamber are provided herein. In some embodiments, a process chamber liner may include a cylindrical body, an inner electromagnetic cosine-theta (cos θ) coil ring including a first plurality of inner coils embedded in the body and configured to generate a magnetic field in a first direction, and an outer electromagnetic cosine-theta (cos θ) coil ring including a second plurality of outer coils embedded in the body and configured to generate a magnetic field in a second direction orthogonal to the first direction, wherein the outer electromagnetic cos θ coil ring is disposed concentrically about the inner electromagnetic cos θ coil ring.

公开(公告)号：US09659751B2

公开(公告)日：2017-05-23

申请号：US14341492

申请日：2014-07-25

申请人： APPLIED MATERIALS, INC.

发明人： Kartik Ramaswamy ,  Yang Yang ,  Steven Lane ,  Lawrence Wong ,  Joseph F. Aubuchon ,  Travis Koh

IPC分类号： H01J7/24 ,  H01J37/32

CPC分类号： H01J37/32165 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174

摘要： Spatial distribution of RF power delivered to plasma in a processing chamber is controlled using an arrangement of primary and secondary inductors, wherein the current through the secondary inductors affects the spatial distribution of the plasma. The secondary inductors are configured to resonate at respectively different frequencies. A first secondary inductor is selectively excited to resonance, during a first time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the first secondary inductor. A second secondary inductor is selectively excited to resonance, during a second time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the second secondary inductor. The secondary inductors are isolated from one another and terminated such that substantially all current that passes through them and into the plasma results from mutual inductance with a primary inductor.

公开(公告)号：US11791136B2

公开(公告)日：2023-10-17

申请号：US17240695

申请日：2021-04-26

申请人： Applied Materials, Inc.

发明人： Sanjeev Baluja ,  Yi Yang ,  Truong Nguyen ,  Nattaworn Boss Nunta ,  Joseph F. Aubuchon ,  Tuan Anh Nguyen ,  Karthik Janakiraman

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/40 ,  C23C16/50 ,  C23C16/52 ,  C23C16/44 ,  C23C16/509

CPC分类号： H01J37/32449 ,  C23C16/401 ,  C23C16/4401 ,  C23C16/4557 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32522 ,  C23C16/45574 ,  H01J2237/3321 ,  H01J2237/3323

摘要： In one embodiment, at least a processing chamber includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate comprising an inner and outer trenches surrounding the central gas channel, a first and second gas channels formed in the gas manifold, the first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench, a second gas distribution plate, a third gas distribution plate disposed below the second gas distribution plate, and a plurality of pass-through channels disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution plate, a central opening in fluid communication with the central gas channel, and a recess region formed in a top surface of the second gas distribution plate, and the recess region surrounds the central opening.

公开(公告)号：US10249479B2

公开(公告)日：2019-04-02

申请号：US14985688

申请日：2015-12-31

申请人： Applied Materials, Inc.

发明人： Joseph F. Aubuchon ,  Tza-Jing Gung ,  Travis Lee Koh ,  Nattaworn Boss Nunta ,  Sheng-Chin Kung ,  Steven Lane ,  Kartik Ramaswamy ,  Yang Yang

IPC分类号： H01J37/32

摘要： Embodiments described herein generally relate to plasma process apparatus. In one embodiment, the plasma process apparatus includes a plasma source assembly. The plasma source assembly may include a first coil, a second coil surrounding the first coil, and a magnetic device disposed outside the first and inside the second coil. The magnet enables additional tuning which improves uniformity control of the processes on the substrate.

公开(公告)号：US09779953B2

公开(公告)日：2017-10-03

申请号：US14491729

申请日：2014-09-19

申请人： APPLIED MATERIALS, INC.

发明人： Joseph F. Aubuchon ,  Tza-Jing Gung ,  Samer Banna

IPC分类号： H01L21/306 ,  H01L21/3065 ,  H01J37/32

CPC分类号： H01L21/3065 ,  H01J37/3211 ,  H01J37/32669

摘要： Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, an apparatus for processing a substrate includes: a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber; two or more concentric inductive coils disposed above the dielectric lid to inductively couple RF energy into the processing volume above the substrate support; and an electromagnetic dipole disposed proximate a top surface of the dielectric lid between two adjacent concentric inductive coils of the two or more concentric inductive coils.

公开(公告)号：US09613783B2

公开(公告)日：2017-04-04

申请号：US14339990

申请日：2014-07-24

申请人： APPLIED MATERIALS, INC.

发明人： Steven Lane ,  Tza-Jing Gung ,  Kartik Ramaswamy ,  Travis Koh ,  Joseph F. Aubuchon ,  Yang Yang

IPC分类号： H01J37/32

CPC分类号： H01J37/3211 ,  H01J37/32669

摘要： Methods and apparatus for controlling a magnetic field in a plasma chamber are provided herein. In some embodiments, a process chamber liner may include a cylindrical body, an inner electromagnetic cosine-theta (cos θ) coil ring including a first plurality of inner coils embedded in the body and configured to generate a magnetic field in a first direction, and an outer electromagnetic cosine-theta (cos θ) coil ring including a second plurality of outer coils embedded in the body and configured to generate a magnetic field in a second direction orthogonal to the first direction, wherein the outer electromagnetic cos θ coil ring is disposed concentrically about the inner electromagnetic cos θ coil ring.

公开(公告)号：US09209074B2

公开(公告)日：2015-12-08

申请号：US14717375

申请日：2015-05-20

申请人： Applied Materials, Inc.

发明人： Jiang Lu ,  Hyoung-Chan Ha ,  Paul F. Ma ,  Seshadri Ganguli ,  Joseph F. Aubuchon ,  Sang-ho Yu ,  Murali K. Narasimhan

IPC分类号： B05D5/12 ,  H01L21/768 ,  H01L21/285

CPC分类号： H01L21/76871 ,  C23C16/16 ,  C23C16/18 ,  C23C16/42 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873

摘要： Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.

公开(公告)号：US11017986B2

公开(公告)日：2021-05-25

申请号：US16001264

申请日：2018-06-06

申请人： Applied Materials, Inc.

发明人： Sanjeev Baluja ,  Yi Yang ,  Truong Nguyen ,  Nattaworn Boss Nunta ,  Joseph F. Aubuchon ,  Tuan Anh Nguyen ,  Karthik Janakiraman

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/40 ,  C23C16/50 ,  C23C16/52 ,  C23C16/44 ,  C23C16/509

摘要： Disclosed embodiments generally relate to a processing chamber that includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate that includes inner and outer trenches surrounding the central gas channel, and a first and second gas channels formed in the gas manifold. The first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench and a second gas distribution plate The first gas channel is in further fluid communication with a third gas distribution plate that is disposed below the second gas distribution plate, and a plurality of pass-through channels that are disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution plate as well as a central opening in fluid communication with the central gas channel The second gas distribution plate further includes a recess region formed in a top surface of the second gas distribution plate, and the recess region surrounds the central opening.

公开(公告)号：US20160225590A1

公开(公告)日：2016-08-04

申请号：US14985688

申请日：2015-12-31

申请人： Applied Materials, Inc.

发明人： Joseph F. Aubuchon ,  Tza-Jing Gung ,  Travis Lee Koh ,  Nattaworn Nuntaworanuch ,  Sheng-Chin Kung ,  Steven Lane ,  Kartik Ramaswamy ,  Yang Yang

IPC分类号： H01J37/32

CPC分类号： H01J37/32669 ,  H01J37/3211

摘要： Embodiments described herein generally relate to plasma process apparatus. In one embodiment, the plasma process apparatus includes a plasma source assembly. The plasma source assembly may include a first coil, a second coil surrounding the first coil, and a magnetic device disposed outside the first and inside the second coil. The magnet enables additional tuning which improves uniformity control of the processes on the substrate.

摘要翻译： 本文描述的实施例一般涉及等离子体处理装置。 在一个实施例中，等离子体处理装置包括等离子体源组件。 等离子体源组件可以包括第一线圈，围绕第一线圈的第二线圈和设置在第二线圈的第一和内侧的磁性装置。 该磁体可实现额外的调谐，从而提高基板上工艺的均匀性控制。