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公开(公告)号：US20230228828A1
公开(公告)日：2023-07-20
申请号：US17648151
申请日：2022-01-17
发明人： Maxim Klebanov , Yen Ting Liu , Paolo Campiglio , Sundar Chetlur , Harianto Wong
CPC分类号： G01R33/093 , G01R3/00 , G01R33/098
摘要： In one aspect, a method includes forming a coil in a coil layer, performing planarization on the coil layer, and depositing a magnetoresistance (MR) element on the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element. In another aspect, a magnetic field sensor includes a substrate, a planarized coil layer comprising a coil on the substrate, a magnetoresistance (MR) element in contact with the planarized coil layer, and a capping layer deposited over the MR element and the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element.
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公开(公告)号：US11630169B1
公开(公告)日：2023-04-18
申请号：US17648154
申请日：2022-01-17
发明人： Yen Ting Liu , Maxim Klebanov , Paolo Campiglio , Sundar Chetlur , Harianto Wong
摘要： In one aspect, a method includes forming a metal layer on a substrate, wherein the metal layer comprises a first coil, forming a planarized insulator layer on the metal layer, forming at least one via in the planarized insulator layer, depositing a magnetoresistance (MR) element on the planarized insulator layer, and forming a second coil extending above the MR element. The at least one via electrically connects to the metal layer on one end and to MR element on the other end.
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公开(公告)号：US20210057642A1
公开(公告)日：2021-02-25
申请号：US17089798
申请日：2020-11-05
发明人： Yen Ting Liu , Maxim Klebanov , Bryan Cadugan , Sundar Chetlur , Harianto Wong
IPC分类号： H01L43/12
摘要： An apparatus including a magnetoresistance element having conductive contacts disposed between the magnetoresistance element and a semiconductor substrate.
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公开(公告)号：US10593869B2
公开(公告)日：2020-03-17
申请号：US15219694
申请日：2016-07-26
发明人： Harianto Wong , William P. Taylor
摘要： The present disclosure is directed towards a method for patterning a magnetic sensing layer. The method includes disposing a protective layer on a first of a substrate, disposing a first insulating layer on a first surface of protective layer. An opening is formed in the first insulating layer to expose the first surface of the protective layer. A magnetic sensing layer is disposed over the first insulating layer and a predetermined portion of the first surface of the protective layer within the opening. A second insulating layer can be disposed over the magnetic sensing layer. The second insulation layer and the magnetic sensing layer can be removed from the first insulation layer. Thus, the opening includes the magnetic sensing layer and the second insulation layer after the removal of the second insulation layer and magnetic sensing layer from the first insulation layer.
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公开(公告)号：US20190285667A1
公开(公告)日：2019-09-19
申请号：US16421982
申请日：2019-05-24
发明人： Shaun D. Milano , Bryan Cadugan , Michael C. Doogue , Alexander Latham , William P. Taylor , Harianto Wong , Sundar Chetlur
摘要： Systems and methods described herein are directed towards integrating a shield layer into a current sensor to shield a magnetic field sensing element and associated circuitry in the current sensor from electrical, voltage, or electrical transient noise. In an embodiment, a shield layer may be disposed along at least one surface of a die supporting a magnetic field sensing element. The shield layer may be disposed in various arrangements to shunt noise caused by a parasitic coupling between the magnetic field sensing element and the current carrying conductor away from the magnetic field sensing element.
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公开(公告)号：US20190067562A1
公开(公告)日：2019-02-28
申请号：US15689185
申请日：2017-08-29
IPC分类号： H01L43/06 , H01L43/04 , H01L43/08 , H01L43/14 , H01L25/065
摘要： Methods and apparatus for a signal isolator having a dielectric interposer supporting first and second die each having a magnetic field sensing element. A first signal path extends from the first die to the second die and a second signal path extends from the second die to the first die. In embodiments, the first signal path is located in the interposer and includes a first coil to generate a magnetic field and the second signal path is located in the interposer and includes a second coil to generate a magnetic filed. The first coil is located in relation to the second magnetic field sensing element of the second die and the second coil is located in relation to the first magnetic field sensing element of the first die.
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公开(公告)号：US09857437B2
公开(公告)日：2018-01-02
申请号：US15088493
申请日：2016-04-01
发明人： William P. Taylor , Harianto Wong
IPC分类号： H01L43/04 , H01L43/06 , H01L43/14 , G01R33/07 , H01L43/10 , G01R33/00 , H01L23/48 , H01L27/22
CPC分类号： G01R33/07 , G01R33/0052 , H01L23/481 , H01L27/22 , H01L43/04 , H01L43/06 , H01L43/065 , H01L43/10 , H01L43/14 , H01L2224/48091 , H01L2224/4826 , H01L2924/00014
摘要： In one aspect, a Hall Effect sensing element includes a Hall plate having a thickness less than about 100 nanometers an adhesion layer directly in contact with the Hall plate and having a thickness in a range about 0.1 nanometers to 5 nanometers. In another aspect, a sensor includes a Hall Effect sensing element. The Hall Effect sensing element includes a substrate that includes one of a semiconductor material or an insulator material, an insulation layer in direct contact with the substrate, an adhesion layer having a thickness in a range of about 0.1 nanometers to 5 nanometers and in direct contact with the insulation layer and a Hall plate in direct contact with the adhesion layer and having a thickness less than about 100 nanometers.
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公开(公告)号：US11296247B2
公开(公告)日：2022-04-05
申请号：US16272005
申请日：2019-02-11
发明人： Bryan Cadugan , Harianto Wong , William P. Taylor
IPC分类号： H01L31/0352 , H01L31/18 , H01L31/105
摘要： An electronics module assembly for detecting photons is provided to include: a substrate layer; a buried layer deposited upon a first surface area of the substrate layer; an intrinsic layer deposited upon a first portion of a first surface area of the buried layer; a plug layer deposited upon a second portion of the first surface area of the buried layer; a p-plus layer deposited upon a first surface area of the intrinsic layer; an n-plus layer deposited upon a first surface area of the plug layer; a pre-metal dielectric (PMD) layer deposited upon the p-plus layer and n-plus layer; a first node coupled, through the PMD layer, to the p-plus layer; and a second node coupled, through the PMD layer, to the n-plus layer.
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公开(公告)号：US11170858B2
公开(公告)日：2021-11-09
申请号：US16822119
申请日：2020-03-18
IPC分类号： G11C16/04 , G11C16/34 , G11C16/14 , G11C16/26 , G01R33/09 , G11C11/406 , G11C11/4074 , G11C5/05 , G11C16/08
摘要： A method for use in a memory device including a first memory matrix is provided, the method comprising: receiving a write request that is associated with a first memory cell, the first memory cell being part of the first memory matrix; copying a content of a second memory cell into a register, the second memory cell being part of the first memory matrix; overwriting the second memory cell with the content of the register when the content of the second memory cell is different from the content of the register; and writing, to the first memory cell, at least a portion of data that is associated with the write request.
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公开(公告)号：US20200259033A1
公开(公告)日：2020-08-13
申请号：US16740816
申请日：2020-01-13
发明人： Bryan Cadugan , Harianto Wong , William P. Taylor
IPC分类号： H01L31/102 , H01L31/0224 , H01L31/18
摘要： According to an embodiment of the present disclosure, a photodetector device can include a substrate layer; a bottom contacting layer disposed over a surface of the substrate layer and having a first contacting region and a second contacting region, the bottom contacting layer providing a low resistance path between the first and second contacting regions; an insulating layer disposed over a surface of the bottom contacting layer; an intrinsic region disposed within the insulating layer, the intrinsic region in electrical contact with the first contacting region of the bottom contacting layer, the intrinsic region comprising a low band-gap material; a metal contact disposed within the insulating layer and in electrical contact with the second contacting region of the bottom contacting layer; an anode in electrical contact with the intrinsic region; and a cathode in electrical contact with the metal contact.
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