公开(公告)号：US20200233311A1

公开(公告)日：2020-07-23

申请号：US16076231

申请日：2017-02-16

Applicant: ASML NETHERLANDS B.V. ,  Lam Research Corporation

Inventor： Michael KUBIS ,  Marinus JOCHEMSEN ,  Richard Stephen WISE ,  Nader SHAMMA ,  Girish Anant DIXIT ,  Liesbeth REIJNEN ,  Ekaterina Mikhailovna VIATKINA ,  Melisa LUCA ,  Johannes Catharinus Hubertus MULKENS

IPC: G03F7/20 ,  G01N21/47

Abstract: A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.

公开(公告)号：US20180067900A1

公开(公告)日：2018-03-08

申请号：US15558186

申请日：2016-03-25

Applicant: ASML Netherlands B.V.

Inventor： Everhardus Cornelis MOS ,  Velislava IGNATOVA ,  Erik JENSEN ,  Michael KUBIS ,  Hubertus Johannes Gertrudus SIMONS ,  Peter TEN BERGE ,  Erik Johannes Maria WALLERBOS ,  Jochem Sebastiaan WILDENBERG

IPC: G06F17/18 ,  G06F17/50 ,  G03F7/20

CPC classification number: G06F17/18 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7003 ,  G06F17/5009 ,  H01L22/12 ,  H01L22/20

Abstract: A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.

公开(公告)号：US20220027437A1

公开(公告)日：2022-01-27

申请号：US17496555

申请日：2021-10-07

Applicant: ASML Netherlands B.V.

Inventor： Everhardus Cornelis MOS ,  Velislava IGNATOVA ,  Erik JENSEN ,  Michael KUBIS ,  Hubertus Johannes Gertrudus SIMONS ,  Peter TEN BERGE ,  Erik Johannes Maria WALLERBOS ,  Jochem Sebastiaan WILDENBERG

IPC: G06F17/18 ,  G03F7/20 ,  G06F30/20

Abstract: A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.

公开(公告)号：US20140139814A1

公开(公告)日：2014-05-22

申请号：US14149723

申请日：2014-01-07

Applicant: ASML Netherlands B.V.

Inventor： Hugo Augustinus Joseph CRAMER ,  Arie Jeffrey DEN BOEF ,  Henricus Johanne Lambertus MEGENS ,  Hendrik Jan Hidde SMILDE ,  Adrianus Johanne Hendrikus SCHELLEKENS ,  Michael KUBIS

IPC: G03F7/20 ,  G01N21/88

CPC classification number: G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

Abstract: In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.

Abstract translation: 在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在基板上形成结构，该结构具有至少一个特征，该特征在印刷图案中具有不对称性 作为光刻设备在基板上的焦点的函数。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像。 第一图像使用非零阶衍射辐射的第一部分形成。 在用第二辐射束照射结构的同时形成和检测周期性结构的第二图像。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。 在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。 可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。

公开(公告)号：US20220057192A1

公开(公告)日：2022-02-24

申请号：US17519641

申请日：2021-11-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve BHATTACHARYYA ,  Henricus Wilhelmus Maria VAN BUEL ,  Christophe David FOUQUET ,  Hendrik Jan Hidde SMILDE ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF ,  Richard Johannes Franciscus VAN HAREN ,  Xing Lan LIU ,  Johannes Marcus Maria BELTMAN ,  Andreas FUCHS ,  Omer Abubaker Omer ADAM ,  Michael KUBIS ,  Martin Jacobus Johan JAK

IPC: G01B11/14 ,  G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

公开(公告)号：US20180307135A1

公开(公告)日：2018-10-25

申请号：US15769338

申请日：2016-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter TEN BERGE ,  Everhardus Cornelis MOS ,  Richard Johannes Franciscus VAN HAREN ,  Peter Hanzen WARDENIER ,  Erik JENSEN ,  Bernardo KASTRUP ,  Michael KUBIS ,  Johannes Catharinus Hubertus MULKENS ,  Davis Frans Simon DECKERS ,  Wolfgang Helmut HENKE ,  Joungchel LEE

IPC: G03F1/72 ,  G03F7/20

CPC classification number: G03F1/72 ,  G03B27/68 ,  G03F7/70425 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633

Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

公开(公告)号：US20160179019A1

公开(公告)日：2016-06-23

申请号：US15057651

申请日：2016-03-01

Applicant: ASML Netherlands B.V.

Inventor： Maurits VAN DER SCHAAR ,  Patrick WARNAAR ,  Kaustuve BHATTACHARYYA ,  Hendrik Jan Hidde SMILDE ,  Michael KUBIS

IPC: G03F9/00

CPC classification number: G03F9/7042 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683 ,  H01L23/544 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

公开(公告)号：US20210255553A1

公开(公告)日：2021-08-19

申请号：US17306670

申请日：2021-05-03

Applicant: ASML Netherlands B.V.

Inventor： Zili ZHOU ,  Nitesh PANDEY ,  Olger Victor ZWIER ,  Patrick WARNAAR ,  Maurits VAN DER SCHAAR ,  Elliott Gerard MC NAMARA ,  Arie Jeffrey DEN BOEF ,  Paul Christiaan HINNEN ,  Murat BOZKURT ,  Joost Jeroen OTTENS ,  Kaustuve BHATTACHARYYA ,  Michael KUBIS

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F9/00

Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shifht (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

公开(公告)号：US20150153656A1

公开(公告)日：2015-06-04

申请号：US14613687

申请日：2015-02-04

Applicant: ASML Netherlands B.V.

Inventor： Stefan Cornelis Theodorus VAN DER SANDEN ,  Richard Johanne Franciscus VAN HAREN ,  Hubertus Johannes Gertrudus SIMONS ,  Remi Daniel Marie EDART ,  Xiuhong WEI ,  Irina LYULINA ,  Michael KUBIS

IPC: G03F7/20

CPC classification number: G03F7/70616 ,  G03F7/70141 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7088

Abstract: A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.

Abstract translation: 衬底被加载到光刻设备的衬底支撑件上，之后设备测量衬底对准标记的位置。 这些测量定义了第一校正信息，允许设备在衬底上的一个或多个所需位置上施加图案。 附加的第二校正信息用于增强图案定位的精度，特别是校正标称对准格栅的较高阶失真。 第二校正信息可以基于当对同一衬底施加先前图案时制作的对准标记的位置的测量。 第二校正信息可以替代地或另外基于在当前衬底之前已被图案化的类似衬底上进行的测量。

公开(公告)号：US20130148121A1

公开(公告)日：2013-06-13

申请号：US13687569

申请日：2012-11-28

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey DEN BOEF ,  Kaustuve BHATTACHARYYA ,  Martin Jacobus Johan JAK ,  Michael KUBIS

IPC: G01B11/00

CPC classification number: G01B11/24 ,  G01B11/14 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7049 ,  G03F9/7088 ,  G03F9/7092

Abstract: Disclosed is a device manufacturing method, and accompanying inspection and lithographic apparatuses. The method comprises measuring on the substrate a property such as asymmetry of a first overlay marker and measuring on the substrate a property such as asymmetry of an alignment marker. In both cases the asymmetry is determined. The position of the alignment marker on the substrate is then determined using an alignment system and the asymmetry information of the alignment marker and the substrate aligned using this measured position. A second overlay marker is then printed on the substrate; and a lateral overlay measured on the substrate of the second overlay marker with respect to the first overlay marker using the determined asymmetry information of the first overlay marker.

Abstract translation: 公开了一种器件制造方法，以及伴随的检查和光刻设备。 该方法包括在衬底上测量诸如第一覆盖标记的不对称性和在衬底上测量诸如对准标记的不对称性的特性。 在这两种情况下，确定不对称性。 然后使用对准系统确定对准标记在衬底上的位置，并使用该测量位置对准对准标记和衬底的不对称信息。 然后将第二覆盖标记印刷在基底上; 以及使用所确定的所述第一覆盖标记的不对称信息相对于所述第一覆盖标记在所述第二覆盖标记的基板上测量的横向覆盖。