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公开(公告)号：US20240186107A1
公开(公告)日：2024-06-06
申请号：US18411525
申请日：2024-01-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Bernardo KASTRUP , Johannes Catharinus Hubertus Mulkens , Marinus Aart Van Den Brink , Jozef Petrus Henricus Benschop , Erwin Paul Smakman , Tamara Druzhinina , Coen Adrianus Verschuren
CPC classification number: H01J37/263 , H01J37/023 , H01J37/15 , H01J37/22 , H01J37/244 , H01J37/28 , H01J2237/0245 , H01J2237/2817
Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.
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公开(公告)号：US20240403537A1
公开(公告)日：2024-12-05
申请号：US18806274
申请日：2024-08-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Christophe David FOUQUET , Bernardo KASTRUP , Arie Jeffrey DEN BOEF , Johannes Catharinus Hubertus MULKENS , James Benedict KAVANAGH , James Patrick KOONMEN , Neal Patrick CALLAN
IPC: G06F30/398 , G03F7/00 , G06F30/20 , G06N7/01 , H01L21/66
Abstract: A defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.
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公开(公告)号：US20150356233A1
公开(公告)日：2015-12-10
申请号：US14730993
申请日：2015-06-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Christophe David FOUQUET , Bernardo KASTRUP , Arie Jeffrey DEN BOEF , Johannes Catharinus Hubertus MULKENS , James Benedict KAVANAGH , James Patrick KOONMEN , Neal Patrick CALLAN
CPC classification number: G06F17/5081 , G03F7/705 , G03F7/70525 , G03F7/7065 , G06F17/5009 , G06N7/005 , H01L22/20
Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.
Abstract translation: 这里公开了一种用于设备制造过程的计算机实现的缺陷预测方法，该方法涉及将设计布局的一部分处理到衬底上，所述方法包括：从所述设计布局的所述部分中识别热点; 确定所述热点的装置制造过程的处理参数的值的范围，其中当所述处理参数具有超出所述范围的值时，通过所述装置制造过程从所述热点产生缺陷; 确定处理参数的实际值; 使用设备制造过程从热点产生的缺陷确定或预测使用实际值存在，存在概率，特性或其组合。
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公开(公告)号：US20190006147A1
公开(公告)日：2019-01-03
申请号：US16064193
申请日：2016-12-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Bernardo KASTRUP , Johannes Catharinus Hubertus MULKENS , Marinus Aart VAN DEN BRINK , Jozef Petrus Henricus BENSCHOP , Erwin Paul SMAKMAN , Tamara DRUZHININA , Coen Adrianus VERSCHUREN
IPC: H01J37/26 , H01J37/28 , H01J37/15 , H01J37/244
Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns. The actuator system may include a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.
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公开(公告)号：US20170046473A1
公开(公告)日：2017-02-16
申请号：US15339669
申请日：2016-10-31
Applicant: ASML NETHERLANDS B.V.
Inventor： Christophe David FOUQUET , Bernardo KASTRUP , Arie Jeffrey DEN BOEF , Johannes Catharinus Hubertus MULKENS , James Benedict KAVANAGH , James Patrick KOONMEN , Neal Patrick CALLAN
CPC classification number: G06F17/5081 , G03F7/705 , G03F7/70525 , G03F7/7065 , G06F17/5009 , G06N7/005 , H01L22/20
Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.
Abstract translation: 这里公开了一种用于设备制造过程的计算机实现的缺陷预测方法，该方法涉及将设计布局的一部分处理到衬底上，所述方法包括：从所述设计布局的所述部分中识别热点; 确定所述热点的装置制造过程的处理参数的值的范围，其中当所述处理参数具有超出所述范围的值时，通过所述装置制造过程从所述热点产生缺陷; 确定处理参数的实际值; 使用设备制造过程从热点产生的缺陷确定或预测使用实际值存在，存在概率，特性或其组合。
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Patent Agency Ranking
公开(公告)号：US20210375581A1
公开(公告)日：2021-12-02
申请号：US17403006
申请日：2021-08-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Bernardo KASTRUP , Johannes Catharinus Hubertus MULKENS , Marinus Aart VAN DEN BRINK , Jozef Petrus Henricus BENSCHOP , Erwin Paul SMAKMAN , Tamara DRUZHININA , Coen Adrianus VERSCHUREN
Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.
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公开(公告)号：US20210357570A1
公开(公告)日：2021-11-18
申请号：US17389682
申请日：2021-07-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Christophe David FOUQUET , Bernardo KASTRUP , Arie Jeffrey DEN BOEF , Johannes Catharinus Hubertus MULKENS , James Benedict KAVANAGH , James Patrick KOONMEN , Neal Patrick CALLAN
IPC: G06F30/398 , H01L21/66 , G03F7/20 , G06F30/20 , G06N7/00
Abstract: A defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.
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公开(公告)号：US20180365369A1
公开(公告)日：2018-12-20
申请号：US15996992
申请日：2018-06-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Christophe David FOUQUET , Bernardo KASTRUP , Arie Jeffrey Den Boef , Johannes Catharinus Hubertus Mulkens , James Benedict Kavanagh , James Patrick Koonmen , Neal Patrick Callan
CPC classification number: G06F17/5081 , G03F7/705 , G03F7/70525 , G03F7/7065 , G06F17/5009 , G06N7/005 , H01L22/20
Abstract: A computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.
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公开(公告)号：US20210079519A1
公开(公告)日：2021-03-18
申请号：US16971012
申请日：2019-02-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter Willem Herman DE JAGER , Sander Frederik WUISTER , Marie-Claire VAN LARE , Ruben Cornelis MAAS , Alexey Olegovich POLYAKOV , Tamara DRUZHININA , Victoria VORONINA , Evgenia KURGANOVA , Jim Vincent OVERKAMP , Bernardo KASTRUP , Maarten VAN KAMPEN , Alexandr DOLGOV
IPC: C23C16/04 , C23C16/455 , C23C16/48
Abstract: Methods and apparatuses for forming a patterned layer of material are disclosed. In one arrangement, a selected portion of a surface of a substrate is irradiated with electromagnetic radiation having a wavelength of less than 100 nm during a deposition process. Furthermore, an electric field controller is configured to apply an electric field that is oriented so as to force secondary electrons away from the substrate. The irradiation locally drives the deposition process in the selected portion and thereby causes the deposition process to, for example, form a layer of material in a pattern defined by the selected portion.
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公开(公告)号：US20180307135A1
公开(公告)日：2018-10-25
申请号：US15769338
申请日：2016-09-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Peter TEN BERGE , Everhardus Cornelis MOS , Richard Johannes Franciscus VAN HAREN , Peter Hanzen WARDENIER , Erik JENSEN , Bernardo KASTRUP , Michael KUBIS , Johannes Catharinus Hubertus MULKENS , Davis Frans Simon DECKERS , Wolfgang Helmut HENKE , Joungchel LEE
CPC classification number: G03F1/72 , G03B27/68 , G03F7/70425 , G03F7/705 , G03F7/70625 , G03F7/70633
Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.
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