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1.发明申请Method of Measuring a Property of a Target Structure, Inspection Apparatus, Lithographic System and Device Manufacturing Method 有权测量目标结构属性的方法，检测装置，平版印刷系统和装置制造方法公开(公告)号：US20160086324A1
公开(公告)日：2016-03-24
申请号：US14839325
申请日：2015-08-28
Applicant: ASML Netherlands B.V.
CPC classification number: G06T7/0004 , G03F7/705 , G03F7/70591 , G03F7/70633 , G06T7/11 , G06T2207/10061 , G06T2207/20224 , G06T2207/30148
Abstract: A property of a target structure is measured based on intensity of an image of the target. The method includes (a) obtaining an image of the target structure; (b) defining (1204) a plurality of candidate regions of interest, each candidate region of interest comprising a plurality of pixels in the image; (c) defining (1208, 1216) an optimization metric value for the candidate regions of interest based at least partly on signal values of pixels within the region of interest; (d) defining (1208, 1216) a target signal function which defines a contribution of each pixel in the image to a target signal value. The contribution of each pixel depends on (i) which candidate regions of interest contain that pixel and (ii) optimization metric values of those candidate regions of interest.
Abstract translation: 基于目标的图像的强度来测量目标结构的属性。 该方法包括（a）获得目标结构的图像; （b）定义（1204）多个候选兴趣区域，每个候选区域包括图像中的多个像素; （c）至少部分地基于所述感兴趣区域内的像素的信号值来定义（1208,1216）所述候选区域的优化度量值; （d）定义（1208,1216）目标信号功能，其将图像中的每个像素的贡献定义为目标信号值。 每个像素的贡献取决于（i）感兴趣的哪个候选区域包含该像素，以及（ii）感兴趣的候选区域的优化度量值。
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公开(公告)号：US20220057192A1
公开(公告)日：2022-02-24
申请号：US17519641
申请日：2021-11-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Kaustuve BHATTACHARYYA , Henricus Wilhelmus Maria VAN BUEL , Christophe David FOUQUET , Hendrik Jan Hidde SMILDE , Maurits VAN DER SCHAAR , Arie Jeffrey DEN BOEF , Richard Johannes Franciscus VAN HAREN , Xing Lan LIU , Johannes Marcus Maria BELTMAN , Andreas FUCHS , Omer Abubaker Omer ADAM , Michael KUBIS , Martin Jacobus Johan JAK
Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
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公开(公告)号：US20190079413A1
公开(公告)日：2019-03-14
申请号：US16106322
申请日：2018-08-21
Applicant: ASML Netherlands B.V.
Abstract: An apparatus and method for estimating a parameter of a lithographic process and an apparatus and method for determining a relationship between a measure of quality of an estimate of a parameter of a lithographic process are provided. In the apparatus for estimating the parameter a processor is configured to determine a quality of the estimate of the parameter relating to the tested substrate based on a measure of feature asymmetry in the at least first features of the tested substrate and further based on a relationship determined for a plurality of corresponding at least first features of at least one further substrate representative of the tested substrate, the relationship being between a measure of quality of an estimate of the parameter relating to the at least one further substrate and a measure of feature asymmetry in the corresponding first features.
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公开(公告)号：US20190072859A1
公开(公告)日：2019-03-07
申请号：US16117614
申请日：2018-08-30
Applicant: ASML Netherlands B.V.
Inventor： Martin Jacobus Johan JAK , Martin EBERT , Arie Jeffrey DEN BOEF , Nitesh PANDEY
IPC: G03F7/20
Abstract: A method comprising: evaluating a plurality of polarization characteristics associated with measurement of a metrology target of a substrate processed using a patterning process, against one or more measurement quality parameters; and selecting one or more polarization characteristics from the plurality of polarization characteristics based on one or more of the measurement quality parameters
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5.发明申请公开(公告)号：US20190285993A1
公开(公告)日：2019-09-19
申请号：US16428215
申请日：2019-05-31
Applicant: ASML NETHERLANDS B.V.
Inventor： Nitesh PANDEY , Jin LIAN , Samee Ur REHMAN , Martin Jacobus Johan JAK
Abstract: Methods and apparatuses for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method includes obtaining data from a first measurement process. The first measurement process including individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process includes illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.
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Patent Agency Ranking
公开(公告)号：US20180088470A1
公开(公告)日：2018-03-29
申请号：US15706625
申请日：2017-09-15
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G03F7/70633 , G01B11/24 , G01B11/30 , G01N21/47 , G01N21/88 , G02F2202/023 , G03F7/705 , G03F7/70641
Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.
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公开(公告)号：US20170176328A1
公开(公告)日：2017-06-22
申请号：US15378962
申请日：2016-12-14
Applicant: ASML Netherlands B.V.
Inventor： Martin Jacobus Johan JAK , Armand Eugene Albert KOOLEN , Gerbrand VAN DER ZOUW , Dirk Karel Margaretha BRODDIN
Abstract: An inspection apparatus includes an optical system, which has a radiation beam delivery system for delivering radiation to a target, and a radiation beam collection system for collecting radiation after scattering from the target. Both the delivery system and the collection system comprise optical components that control the characteristics of the radiation and the collected radiation. By controlling the characteristics of one or both of the radiation and collected radiation, the depth of focus of the optical system may be increased.
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8.发明申请METROLOGY METHOD AND APPARATUS, SUBSTRATES FOR USE IN SUCH METHODS, LITHOGRAPHIC SYSTEM AND DEVICE MANUFACTURING METHOD 审中-公开计量方法和装置，用于这些方法的基板，光刻系统和器件制造方法公开(公告)号：US20170052454A1
公开(公告)日：2017-02-23
申请号：US15240781
申请日：2016-08-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Martin Jacobus Johan JAK , Hendrik Jan Hidde SMILDE , Te-Chih HUANG , Victor Emanuel CALADO , Henricus Wilhelmus Maria VAN BUEL , Richard Johannes Franciscus VAN HAREN
IPC: G03F7/20
CPC classification number: G03F7/7065 , G03F7/70633 , G03F7/70683
Abstract: A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.
Abstract translation: 衬底具有通过光刻工艺在其上形成的多个覆盖光栅。 每个覆盖光栅具有已知的叠加偏置。 叠加偏置的值包括例如在以P为中心的区域中的零点和两个值的区域中的两个值，其中P是光栅的间距。 使用不同覆盖偏差值的知识，对光栅的不对称测量计算叠加，每个整体不对称测量由相应的权重因子加权。 每个权重因子表示相应覆盖光栅内的特征不对称的度量。 该计算用于提高测量过程和/或光刻过程的后续性能。 另外可以通过第二加权因子来加权一些不对称测量值，以消除或减少相位不对称对叠加层的贡献。
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公开(公告)号：US20160291481A1
公开(公告)日：2016-10-06
申请号：US15038535
申请日：2014-11-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Hendrik Jan Hidde SMILDE , Arie Jeffrey DEN BOEF , Omer Abubaker Omer ADAM , Martin Jacobus Johan JAK
IPC: G03F7/20
CPC classification number: G03F7/70633
Abstract: A substrate has three or more overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values and an assumed non-linear relationship between overlay and target asymmetry, thereby to correct for feature asymmetry. The periodic relationship in the region of zero bias and P/2 has gradients of opposite sign. The calculation allows said gradients to have different magnitudes as well as opposite sign. The calculation also provides information on feature asymmetry and other processing effects. This information is used to improve subsequent performance of the measurement process, and/or the lithographic process.
Abstract translation: 衬底具有通过光刻工艺在其上形成的三个或更多个覆盖光栅。 每个覆盖光栅具有已知的叠加偏置。 叠加偏置的值包括例如在以P为中心的区域中的零点和两个值的区域中的两个值，其中P是光栅的间距。 使用不同覆盖偏差值的知识以及覆盖和目标不对称之间的假设非线性关系，对光栅的不对称测量计算叠加，从而校正特征不对称性。 零偏置区域和P / 2区域的周期关系具有相反符号梯度。 该计算允许所述梯度具有不同的幅度以及相反的符号。 该计算还提供了有关特征不对称性和其他处理效果的信息。 该信息用于改进随后的测量过程和/或光刻过程的性能。
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10.发明申请公开(公告)号：US20180299794A1
公开(公告)日：2018-10-18
申请号：US15942423
申请日：2018-03-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Nitesh PANDEY , Jin LIAN , SAMEE UR-REHMAN , Martin Jacobus Johan JAK
CPC classification number: G03F7/70633 , G01B11/02 , G03F7/70566 , G03F7/70575 , G03F7/70583 , G03F7/70616
Abstract: Methods and apparatuses for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method includes obtaining data from a first measurement process. The first measurement process including individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process includes illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.
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