公开(公告)号：US20200233311A1

公开(公告)日：2020-07-23

申请号：US16076231

申请日：2017-02-16

Applicant: ASML NETHERLANDS B.V. ,  Lam Research Corporation

Inventor： Michael KUBIS ,  Marinus JOCHEMSEN ,  Richard Stephen WISE ,  Nader SHAMMA ,  Girish Anant DIXIT ,  Liesbeth REIJNEN ,  Ekaterina Mikhailovna VIATKINA ,  Melisa LUCA ,  Johannes Catharinus Hubertus MULKENS

IPC: G03F7/20 ,  G01N21/47

Abstract: A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.

公开(公告)号：US20190214318A1

公开(公告)日：2019-07-11

申请号：US16328319

申请日：2017-08-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Mark John MASLOW ,  Johannes Catharinus Hubertus MULKENS ,  Peter TEN BERGE ,  Franciscus VAN DE MAST ,  Jan-Willem GEMMINK ,  Liesbeth REIJNEN

IPC: H01L21/66 ,  G03F7/36 ,  G03F7/20 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L22/20 ,  G03F7/36 ,  G03F7/70616 ,  G03F7/70683 ,  H01L21/31105 ,  H01L21/31144 ,  H01L21/67253

Abstract: A substrate, including a substrate layer; and an etchable layer on the substrate layer, the etchable layer including a patterned region thereon or therein and including a blank region of sufficient size to enable a bulk etch rate of an etch tool for etching the blank region to be determined.