公开(公告)号：US10394139B2

公开(公告)日：2019-08-27

申请号：US16090713

申请日：2017-03-08

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Güneş Nak{dot over (i)}bo{hacek over (g)}lu ,  Lowell Lane Baker ,  Ruud Hendrikus Martinus Johannes Bloks ,  Hakki Ergün Cekli ,  Geoffrey Alan Schultz ,  Laurentius Johannes Adrianus Van Bokhoven ,  Frank Johannes Jacobus Van Boxtel ,  Jean-Philippe Xavier Van Damme ,  Christopher Charles Ward

IPC: G03F7/20

Abstract: A patterning apparatus for a lithographic apparatus, the patterning apparatus including a patterning device support structure configured to support a patterning device having a planar surface; a patterning device conditioning system including a first gas outlet configured to provide a first gas flow over the planar surface in use and a second gas outlet configured to provide a second gas flow over the planar surface in use, wherein the first gas outlet and the second gas outlet are arranged at different distances perpendicular to the planar surface; and a control system configured to independently control a first momentum of gas exiting the first gas outlet and a second momentum of gas exiting the second gas outlet or to independently vary the first gas flow and/or the second gas flow over the planar surface of the patterning device.

公开(公告)号：US12078935B2

公开(公告)日：2024-09-03

申请号：US17941378

申请日：2022-09-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Rizvi Rahman ,  Hakki Ergün Cekli ,  Cédric Désiré Grouwstra

IPC: G03F7/00 ,  G05B19/418 ,  H01L21/66

CPC classification number: G03F7/70191 ,  G05B19/41875 ,  H01L22/20 ,  G05B2219/45028

Abstract: A device manufacturing method, the method comprising: obtaining a measurement data time series of a plurality of substrates on which an exposure step and a process step have been performed; obtaining a status data time series relating to conditions prevailing when the process step was performed on at least some of the plurality of substrates; applying a filter to the measurement data time series and the status data time series to obtain filtered data; and determining, using the filtered data, a correction to be applied in an exposure step performed on a subsequent substrate.

公开(公告)号：US11592753B2

公开(公告)日：2023-02-28

申请号：US17715112

申请日：2022-04-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian Kou ,  Alexander Ypma ,  Marc Hauptmann ,  Michiel Kupers ,  Lydia Marianna Vergaij-Huizer ,  Erik Johannes Maria Wallerbos ,  Erik Henri Adriaan Delvigne ,  Willem Seine Christian Roelofs ,  Hakki Ergün Cekli ,  Stefan Cornelis Theodorus Van Der Sanden ,  Cédric Désiré Grouwstra ,  David Frans Simon Deckers ,  Manuel Giollo ,  Iryna Dovbush

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US11036146B2

公开(公告)日：2021-06-15

申请号：US15769339

申请日：2016-09-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus Van Haren ,  Everhardus Cornelis Mos ,  Peter Ten Berge ,  Peter Hanzen Wardenier ,  Erik Jensen ,  Hakki Ergün Cekli

IPC: G06F30/33 ,  G03F7/20

Abstract: A method including: obtaining information regarding a patterning error in a patterning process involving a patterning device; determining a nonlinearity over a period of time introduced by modifying the patterning error by a modification apparatus according to the patterning error information; and determining a patterning error offset for use with the modification apparatus based on the determined nonlinearity.

公开(公告)号：US10474045B2

公开(公告)日：2019-11-12

申请号：US15737990

申请日：2016-06-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Franciscus Godefridus Casper Bijnen ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Patricius Aloysius Jacobus Tinnemans ,  Alexander Ypma ,  Irina Anatolievna Lyulina ,  Edo Maria Hulsebos ,  Hakki Ergün Cekli ,  Xing Lan Liu ,  Loek Johannes Petrus Verhees ,  Victor Emanuel Calado ,  Leon Paul Van Dijk

IPC: G03F9/00 ,  G03F7/20

Abstract: A method of characterizing a deformation of a plurality of substrates is described. The method includes: measuring, for a plurality of n different alignment measurement parameters λ and for a plurality of substrates, a position of the alignment marks; determining a positional deviation as the difference between the n alignment mark position measurements and a nominal alignment mark position; grouping the positional deviations into data sets; determining an average data set; subtracting the average data set from the data sets to obtain a plurality of variable data sets; performing a blind source separation method on the variable data sets, thereby decomposing the variable data sets into a set of eigenwafers representing principal components of the variable data sets; and subdividing the set of eigenwafers into a set of mark deformation eigenwafers and a set of substrate deformation eigenwafers.

公开(公告)号：US11803127B2

公开(公告)日：2023-10-31

申请号：US17295193

申请日：2019-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Chenxi Lin ,  Cyrus Emil Tabery ,  Hakki Ergün Cekli ,  Simon Philip Spencer Hastings ,  Boris Menchtchikov ,  Yi Zou ,  Yana Cheng ,  Maxime Philippe Frederic Genin ,  Tzu-Chao Chen ,  Davit Harutyunyan ,  Youping Zhang

IPC: G03F7/00 ,  G05B13/02 ,  G05B19/418 ,  H01L21/66

CPC classification number: G03F7/705 ,  G05B13/027 ,  G05B19/41875 ,  H01L22/20 ,  G05B2219/32193 ,  G05B2219/32368 ,  G05B2219/45031

Abstract: A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.

公开(公告)号：US11181829B2

公开(公告)日：2021-11-23

申请号：US16640088

申请日：2018-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Cyrus Emil Tabery ,  Hakki Ergün Cekli ,  Simon Hendrik Celine Van Gorp ,  Chenxi Lin

IPC: H01L21/66 ,  G03F7/20

Abstract: A method for determining a control parameter for an apparatus used in a semiconductor manufacturing process, the method including: obtaining performance data associated with a substrate subject to the semiconductor manufacturing process; obtaining die specification data including values of an expected yield of one or more dies on the substrate based on the performance data and/or a specification for the performance data; and determining the control parameter in dependence on the performance data and the die specification data. Advantageously, the efficiency and/or accuracy of processes is improved by determining how to perform the processes in dependence on dies within specification.

公开(公告)号：US11086229B2

公开(公告)日：2021-08-10

申请号：US16497826

申请日：2018-03-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexander Ypma ,  Cyrus Emil Tabery ,  Simon Hendrik Celine Van Gorp ,  Chenxi Lin ,  Dag Sonntag ,  Hakki Ergün Cekli ,  Ruben Alvarez Sanchez ,  Shih-Chin Liu ,  Simon Philip Spencer Hastings ,  Boris Menchtchikov ,  Christiaan Theodoor De Ruiter ,  Peter Ten Berge ,  Michael James Lercel ,  Wei Duan ,  Pierre-Yves Jerome Yvan Guittet

IPC: G03F7/20

Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

公开(公告)号：US10578980B2

公开(公告)日：2020-03-03

申请号：US16465161

申请日：2017-11-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Ralph Timotheus Huijgen ,  Marc Jurian Kea ,  Marcel Theodorus Maria Van Kessel ,  Masashi Ishibashi ,  Chi-Hsiang Fan ,  Hakki Ergün Cekli ,  Youping Zhang ,  Maurits Van Der Schaar ,  Liping Ren

IPC: G03B27/32 ,  G03F7/20 ,  G01N21/956 ,  G03F9/00

Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.

公开(公告)号：US10527958B2

公开(公告)日：2020-01-07

申请号：US16132520

申请日：2018-09-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Patricius Aloysius Jacobus Tinnemans ,  Edo Maria Hulsebos ,  Henricus Johannes Lambertus Megens ,  Sudharshanan Raghunathan ,  Boris Menchtchikov ,  Ahmet Koray Erdamar ,  Loek Johannes Petrus Verhees ,  Willem Seine Christian Roelofs ,  Wendy Johanna Martina Van De Ven ,  Hadi Yagubizade ,  Hakki Ergün Cekli ,  Ralph Brinkhof ,  Tran Thanh Thuy Vu ,  Maikel Robert Goosen ,  Maaike Van't Westeinde ,  Weitian Kou ,  Manouk Rijpstra ,  Matthijs Cox ,  Franciscus Godefridus Casper Bijnen

IPC: G03F7/20 ,  G03F9/00

Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.