摘要:
A measurement apparatus, which measures a wavefront aberration of an optical system to be measured, comprises: a calculation unit configured to calculate the wavefront aberration based on an interference fringe generated by light which passed through the optical system to be measured; and a determination unit configured to calculate an evaluation value indicating a wavefront state based on the wavefront aberration calculated by the calculation unit, and determine the calculated wavefront aberration as the wavefront aberration of the optical system if the evaluation value falls within an allowable range.
摘要:
The present invention provides an exposure apparatus comprising a projection optical system configured to project a pattern of a reticle onto a substrate, a stage configured to move the substrate; and a sensor unit which is arranged on the stage and configured to receive light having passed through the projection optical system, the sensor unit including an aperture plate which is configured to be used in measuring different optical performances, and on which a plurality of aperture patterns with different shapes or different sizes are formed, and a photoelectric conversion device configured to photoelectrically convert the light beams from the plurality of aperture patterns.
摘要:
An exposure apparatus includes a projection optical system for projecting a pattern on a reticle onto an object to be exposed, a reference mark that serves as a reference for an alignment between the reticle and the object, a first fluid that has a refractive index of 1 or greater, and fills a space between at least part of the projection optical system and the object and a space between at least part of the projection optical system and the reference mark, and an alignment mechanism for aligning the object by using the projection optical system and the first fluid.
摘要:
An exposure apparatus includes a projection optical system for projecting an exposure pattern, onto an object to be exposed, and a measuring apparatus for measuring, as an interference fringe, optical performance of the projection optical system, wherein the measuring apparatus includes an optical element having opposing first and second surfaces, wherein the first surface has a first measurement pattern, and the second surface has a second measurement pattern and is closer to the projection optical system than the first measurement pattern, and wherein the measuring apparatus introduces light into the projection optical system via first and second measurement patterns.
摘要:
A scanning exposure apparatus for exposing a substrate (8) to a pattern with an original (1) through a projection optical system (5), while scanning the original and the substrate, includes a first detection system (14c) which detects a first substrate reference mark (18c1, 18c3) corresponding to the substrate through the projection optical system on/at at least one of an optical axis of the projection optical and an off-axis position shifted from the optical axis in a scanning direction, and an alignment system (2, 9) which aligns the original and the substrate on the basis of a detection result of the first detection system.
摘要:
A scanning exposure apparatus for exposing a substrate (8) to a pattern with an original (1) through a projection optical system (5), while scanning the original and the substrate, includes a first detection system (14c) which detects a first substrate reference mark (18c1, 18c3) corresponding to the substrate through the projection optical system on/at at least one of an optical axis of the projection optical and an off-axis position shifted from the optical axis in a scanning direction, and an alignment system (2, 9) which aligns the original and the substrate on the basis of a detection result of the first detection system.
摘要:
In an optical anisotropy measurement apparatus for emitting a light flux from a He-Ne laser to be incident to an object to be examined, such as a liquid crystal in a liquid crystal cell, and detecting a light flux totally reflected from the object to be examined to measure an optical anisotropy of the object, a portion of the incident light flux is designed to be incident at an angle smaller than a critical angle of total reflection to and transmitted through the object to be examined. As a result, a light flux-incident region causing total reflection at the boundary is allowed to have a shape closer to a circle and have a smaller size, thus allowing detection of a local alignment change in optical anisotropy as caused by, e.g., a minute alignment defect in a liquid crystal device. Further by detecting the transmitted portion of the incident light flux, an optical anisotropy of the object to be examined at a position other than a boundary thereof can be measured simultaneously.
摘要:
An exposure apparatus, which equipped with a projection optical system that is configured to project a pattern of an original onto a substrate, includes an interferometer configured to measure a wavefront in a first direction and a wavefront in a second direction of light passed through the projection optical system; a focus detecting unit configured to detect focus positions in the first and second directions of the projection optical system; and a calculating unit configured to calculate wavefront aberration of the projection optical system on the basis of the measurement result of the interferometer and the detection result of the focus detecting unit.
摘要:
A projection exposure apparatus 100 projects the pattern of an original 6 onto a substrate 7 via a projection optical system PL. The projection exposure apparatus 100 includes an original stage 5 which holds the original 6, a substrate stage 8 which holds the substrate 7, and a measurement unit. The measurement unit includes a Fizeau interferometer IF including an optical unit 17 and mirror 22. The optical unit 17 includes a Fizeau surface which splits a light beam into a reference light beam and a test light beam. The mirror 22 reflects the test light beam having passed through the projection optical system PL. The optical unit 17 is mounted on the original stage 5. The mirror 22 is mounted on the substrate stage 8.
摘要:
An exposure apparatus includes a projection optical system for projecting an exposure pattern, onto an object to be exposed, and a measuring apparatus for measuring, as an interference fringe, optical performance of the projection optical system, wherein the measuring apparatus includes an optical element having opposing first and second surfaces, wherein the first surface has a first measurement pattern, and the second surface has a second measurement pattern and is closer to the projection optical system than the first measurement pattern, and wherein the measuring apparatus introduces light into the projection optical system via first and second measurement patterns.