摘要:
An exposure apparatus, which equipped with a projection optical system that is configured to project a pattern of an original onto a substrate, includes an interferometer configured to measure a wavefront in a first direction and a wavefront in a second direction of light passed through the projection optical system; a focus detecting unit configured to detect focus positions in the first and second directions of the projection optical system; and a calculating unit configured to calculate wavefront aberration of the projection optical system on the basis of the measurement result of the interferometer and the detection result of the focus detecting unit.
摘要:
An exposure apparatus, which equipped with a projection optical system that is configured to project a pattern of an original onto a substrate, includes an interferometer configured to measure a wavefront in a first direction and a wavefront in a second direction of light passed through the projection optical system; a focus detecting unit configured to detect focus positions in the first and second directions of the projection optical system; and a calculating unit configured to calculate wavefront aberration of the projection optical system on the basis of the measurement result of the interferometer and the detection result of the focus detecting unit.
摘要:
Provided is an exposure apparatus including a projection optical system for projecting an exposure pattern onto an object to be exposed, a measurement device for measuring an optical performance of the projection optical system by guiding light to the projection optical system through a measurement pattern to detect interference fringes formed by the light emitted from the projection optical system, and an adjustment portion for adjusting a numerical aperture of the light that illuminates the measurement pattern, in which the adjustment portion adjusts the numerical aperture so that the visibility of the interference fringes V, which is defined as V=(Imax−Imin)/(Imax+Imin), is equal to or more than 0.3, where Imax represents the maximum amount of light of the interference fringes, and Imin represents the minimum amount of light of the interference fringes, when the measurement device measures an optical performance of the projection optical system.
摘要翻译:本发明提供一种曝光装置,包括用于将曝光图案投影到被曝光物体上的投影光学系统,用于通过测量图案将光引导到投影光学系统以检测干涉来测量投影光学系统的光学性能的测量装置 由投影光学系统发射的光形成的条纹以及用于调节照亮测量图案的光的数值孔径的调节部分,其中调节部分调节数值孔径,使得干涉条纹V的可见度,其中 被定义为V =(I max max -I min min)/(I max max + I min min),是 等于或大于0.3,其中I 最大 SUB>表示干涉条纹的最大光量,I min表示干涉条纹的最小光量,当 测量装置测量光的性能 e投影光学系统。
摘要:
Provided is an exposure apparatus including a projection optical system for projecting an exposure pattern onto an object to be exposed, a measurement device for measuring an optical performance of the projection optical system by guiding light to the projection optical system through a measurement pattern to detect interference fringes formed by the light emitted from the projection optical system, and an adjustment portion for adjusting a numerical aperture of the light that illuminates the measurement pattern, in which the adjustment portion adjusts the numerical aperture so that the visibility of the interference fringes V, which is defined as V=(Imax−Imin)/(Imax+Imin), is equal to or more than 0.3, where Imax represents the maximum amount of light of the interference fringes, and Imin represents the minimum amount of light of the interference fringes, when the measurement device measures an optical performance of the projection optical system.
摘要翻译:本发明提供一种曝光装置,包括用于将曝光图案投影到被曝光物体上的投影光学系统,用于通过测量图案将光引导到投影光学系统以检测干涉来测量投影光学系统的光学性能的测量装置 由投影光学系统发射的光形成的条纹以及用于调节照亮测量图案的光的数值孔径的调节部分,其中调节部分调节数值孔径,使得干涉条纹V的可见度,其中 被定义为V =(I max max -I min min)/(I max max + I min min),是 等于或大于0.3,其中I 最大 SUB>表示干涉条纹的最大光量,I min表示干涉条纹的最小光量,当 测量装置测量光的性能 e投影光学系统。
摘要:
A measurement apparatus, which measures a wavefront aberration of an optical system to be measured, comprises: a calculation unit configured to calculate the wavefront aberration based on an interference fringe generated by light which passed through the optical system to be measured; and a determination unit configured to calculate an evaluation value indicating a wavefront state based on the wavefront aberration calculated by the calculation unit, and determine the calculated wavefront aberration as the wavefront aberration of the optical system if the evaluation value falls within an allowable range.
摘要:
The present invention provides an exposure apparatus comprising a projection optical system configured to project a pattern of a reticle onto a substrate, a stage configured to move the substrate; and a sensor unit which is arranged on the stage and configured to receive light having passed through the projection optical system, the sensor unit including an aperture plate which is configured to be used in measuring different optical performances, and on which a plurality of aperture patterns with different shapes or different sizes are formed, and a photoelectric conversion device configured to photoelectrically convert the light beams from the plurality of aperture patterns.
摘要:
An exposure apparatus includes a projection optical system for projecting a pattern on a reticle onto an object to be exposed, a reference mark that serves as a reference for an alignment between the reticle and the object, a first fluid that has a refractive index of 1 or greater, and fills a space between at least part of the projection optical system and the object and a space between at least part of the projection optical system and the reference mark, and an alignment mechanism for aligning the object by using the projection optical system and the first fluid.
摘要:
A scanning exposure apparatus for exposing a substrate (8) to a pattern with an original (1) through a projection optical system (5), while scanning the original and the substrate, includes a first detection system (14c) which detects a first substrate reference mark (18c1, 18c3) corresponding to the substrate through the projection optical system on/at at least one of an optical axis of the projection optical and an off-axis position shifted from the optical axis in a scanning direction, and an alignment system (2, 9) which aligns the original and the substrate on the basis of a detection result of the first detection system.
摘要:
A scanning exposure apparatus for exposing a substrate (8) to a pattern with an original (1) through a projection optical system (5), while scanning the original and the substrate, includes a first detection system (14c) which detects a first substrate reference mark (18c1, 18c3) corresponding to the substrate through the projection optical system on/at at least one of an optical axis of the projection optical and an off-axis position shifted from the optical axis in a scanning direction, and an alignment system (2, 9) which aligns the original and the substrate on the basis of a detection result of the first detection system.
摘要:
In an optical anisotropy measurement apparatus for emitting a light flux from a He-Ne laser to be incident to an object to be examined, such as a liquid crystal in a liquid crystal cell, and detecting a light flux totally reflected from the object to be examined to measure an optical anisotropy of the object, a portion of the incident light flux is designed to be incident at an angle smaller than a critical angle of total reflection to and transmitted through the object to be examined. As a result, a light flux-incident region causing total reflection at the boundary is allowed to have a shape closer to a circle and have a smaller size, thus allowing detection of a local alignment change in optical anisotropy as caused by, e.g., a minute alignment defect in a liquid crystal device. Further by detecting the transmitted portion of the incident light flux, an optical anisotropy of the object to be examined at a position other than a boundary thereof can be measured simultaneously.