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    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20140346592A1

    公开(公告)日：2014-11-27

    申请号：US14363523

    申请日：2012-12-06

    申请人： Akitaka Soeno ,  Toshimasa Yamamoto ,  Yukihiko Watanabe

    发明人： Akitaka Soeno ,  Toshimasa Yamamoto ,  Yukihiko Watanabe

    IPC分类号： H01L29/78 ,  H01L29/423 ,  H01L29/10 ,  H01L29/51

    CPC分类号： H01L29/7813 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/512 ,  H01L29/513

    摘要： A vertical MOSFET includes: a semiconductor substrate comprising a drain layer, a drift layer, a body layer, and a source layer; and a trench gate penetrating through the source layer and the body layer from an upper surface of the semiconductor substrate and reaching the drift layer. The trench gate includes a gate electrode; a first insulating film disposed on a bottom surface of a trench formed in the semiconductor substrate; a second insulating film disposed at least on a side surface of the trench, and in contact with the body layer; and a third insulating film disposed between the gate electrode and the second insulating film, and formed of a material of which dielectric constant is higher than a dielectric constant of the second insulating film.

    摘要翻译： 垂直MOSFET包括：包括漏极层，漂移层，主体层和源极层的半导体衬底; 以及沟槽栅极，从半导体衬底的上表面穿过源极层和主体层，并到达漂移层。 沟槽栅极包括栅电极; 第一绝缘膜，设置在形成在所述半导体衬底中的沟槽的底表面上; 第二绝缘膜，其至少设置在所述沟槽的侧表面上，并与所述主体层接触; 以及第三绝缘膜，其设置在所述栅电极和所述第二绝缘膜之间，并且由介电常数高于所述第二绝缘膜的介电常数的材料形成。

    SWITCHING ELEMENT AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    SWITCHING ELEMENT AND MANUFACTURING METHOD THEREOF 有权
    开关元件及其制造方法

    公开(公告)号：US20130146969A1

    公开(公告)日：2013-06-13

    申请号：US13712343

    申请日：2012-12-12

    申请人： Hirokazu FUJIWARA ,  Yukihiko WATANABE ,  Narumasa SOEJIMA ,  Toshimasa YAMAMOTO ,  Yuichi TAKEUCHI

    发明人： Hirokazu FUJIWARA ,  Yukihiko WATANABE ,  Narumasa SOEJIMA ,  Toshimasa YAMAMOTO ,  Yuichi TAKEUCHI

    IPC分类号： H01L29/66 ,  H01L29/78

    CPC分类号： H01L29/66666 ,  H01L21/26506 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/7827

    摘要： A switching element is provided having a semiconductor substrate. A trench gate electrode is formed in the upper surface of the semiconductor substrate. An n-type first semiconductor region, a p-type second semiconductor region, and an n-type third semiconductor region are formed in a region in contact with a gate insulating film in the semiconductor substrate. At a position below the second semiconductor region, there is formed a p-type fourth semiconductor region connected to the second semiconductor region and opposing the gate insulating film via the third semiconductor region and containing boron. A high-concentration-carbon containing region having a carbon concentration higher than that of a semiconductor region exposed on the lower surface of the semiconductor substrate is formed in at least a part of the portion of the third semiconductor region, positioned between the fourth semiconductor region and the gate insulating film, that is in contact with the fourth semiconductor region.

    摘要翻译： 提供了具有半导体衬底的开关元件。 沟槽栅电极形成在半导体衬底的上表面中。 在与半导体衬底中的栅极绝缘膜接触的区域中形成n型第一半导体区域，p型第二半导体区域和n型第三半导体区域。 在第二半导体区域下方的位置处，形成连接到第二半导体区域的p型第四半导体区域，并且经由第三半导体区域与栅极绝缘膜相对并且含有硼。 在第三半导体区域的至少一部分中，形成具有比在半导体衬底的下表面露出的半导体区域的碳浓度高的高浓度碳含有区域，位于第四半导体区域 以及与第四半导体区域接触的栅极绝缘膜。

    Flow sensor
    6.
    发明授权
    Flow sensor 失效
    流量传感器

    公开(公告)号：US06705160B2

    公开(公告)日：2004-03-16

    申请号：US10197474

    申请日：2002-07-18

    申请人： Takao Iwaki ,  Toshimasa Yamamoto ,  Hiroyuki Wado

    发明人： Takao Iwaki ,  Toshimasa Yamamoto ,  Hiroyuki Wado

    IPC分类号： G01F168

    CPC分类号： G01F1/692

    摘要： A thin-film type flow sensor having a thin-film part in which a plurality of patterned resistor films are sandwiched between a pair of insulator films. The resistance ratios among the resistor films are minimized from one sensor to another made from the same wafer. The flow sensor has a lower insulator film, the resistor films, and an upper film laminated in succession on a substrate. The resistor films include a patterned fluid thermometer, a temperature detector, and a heater. The heater has a wiring configuration in which resistor elements are connected in a parallel manner. The wiring widths of the heater and the thermometer can thus be made identical, so that the resistance ratios become invariant over the wafer surface, irrespective of a disparity in etching variations.

    摘要翻译： 一种薄膜型流量传感器，其具有多个图案化的电阻膜夹在一对绝缘膜之间的薄膜部分。 电阻膜之间的电阻比从一个传感器到另一个由相同晶片制成的电阻比最小化。 流量传感器具有下层绝缘膜，电阻膜和在基片上连续层压的上层膜。 电阻膜包括图案化流体温度计，温度检测器和加热器。 加热器具有其中电阻元件以并联方式连接的布线配置。 因此，加热器和温度计的布线宽度可以相同，使得电阻比在晶片表面上变得不变，而不管蚀刻变化的不同。

    Semiconductor yaw rate sensor
    9.
    发明授权
    Semiconductor yaw rate sensor 失效
    半导体偏航率传感器

    公开(公告)号：US5500549A

    公开(公告)日：1996-03-19

    申请号：US357258

    申请日：1994-12-13

    申请人： Yukihiro Takeuchi ,  Kozo Shibata ,  Yoshinori Ohtsuka ,  Kazuhiko Kano ,  Toshimasa Yamamoto

    发明人： Yukihiro Takeuchi ,  Kozo Shibata ,  Yoshinori Ohtsuka ,  Kazuhiko Kano ,  Toshimasa Yamamoto

    IPC分类号： G01P15/08 ,  B81B3/00 ,  B81C1/00 ,  G01C19/56 ,  G01C19/5755 ,  G01C19/5769 ,  G01P15/14 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01C19/5719 ,  G01P2015/0814 ,  Y10S73/01

    摘要： A semiconductor yaw rate sensor, which can be structured easily by means of an IC fabrication process, such that a yaw rate detection signal due to a current value is obtained by means of a transistor structure and a method of producing the same is disclosed. A weight supported by beams is disposed at a specified interval from a surface of a semiconductor substrate, and movable electrodes and excitation electrodes are formed integrally with the weight. Fixed electrodes for excitation use are fixed to the substrate in correspondence to the excitation electrodes. Along with this, source electrodes as well as drain electrodes are formed by means of a diffusion layer on a surface of the substrate at positions opposing the movable electrodes, such that drain current changes in correspondence with displacement of the movable electrodes by means of Corioli's force due to yaw rate, and the yaw rate is detected by this current.

    摘要翻译： 半导体偏航率传感器，其可以通过IC制造工艺容易地构造，使得通过晶体管结构获得由于电流值引起的横摆率检测信号，并且公开了其制造方法。 由光束支撑的重量从半导体衬底的表面以规定的间隔设置，并且可动电极和激励电极与该重量一体地形成。 用于激发使用的固定电极对应于激发电极固定到基板。 与此同时，源电极和漏电极通过在与可动电极相对的位置的基板的表面上的扩散层形成，使得漏极电流随着可可电极的位移而变化 由于偏航率，并且由该电流检测到横摆率。

    Acceleration sensor
    10.
    发明授权
    Acceleration sensor 失效
    加速度传感器

    公开(公告)号：US4898033A

    公开(公告)日：1990-02-06

    申请号：US236737

    申请日：1988-08-26

    申请人： Toshimasa Yamamoto

    发明人： Toshimasa Yamamoto

    IPC分类号： B60R22/40 ,  G01P15/03

    CPC分类号： G01P15/036 ,  B60R22/40

    摘要： An acceleration sensor has a lever which is swung by the movement of a mass body that is held in a holding member in such a manner as to be movable relative thereto when an acceleration of a predetermined magnitude or greater acts on the holding member in the horizontal direction. The sensor also has a transmission member which is swung by the movement of the mass body and of which the swinging causes the lever to swing, and a prevention member which prevents any upward movement of the transmission member. Therefore, even when the mass body is affected by an acceleration acting in the vertical direction, any affection of the acceleration is prevented from being transmitted to the lever via the transmission member.

    摘要翻译： 加速度传感器具有杠杆，该杠杆通过被保持在保持构件中的质量体的运动以相对于其移动的方式摆动，当预定幅度或更大的加速度作用在水平方向上的保持构件上时 方向。 传感器还具有通过质量体的运动摆动并且摆动导致杆摆动的传动构件，以及防止传动构件向上运动的防止构件。 因此，即使当质量体受到垂直方向作用的加速度的影响时，防止加速度的影响通过传动构件传递到杠杆。