-
公开(公告)号：US07540199B2
公开(公告)日：2009-06-02
申请号：US11808774
申请日：2007-06-12
申请人： Tetsuo Fujii , Eishi Kawasaki
发明人： Tetsuo Fujii , Eishi Kawasaki
IPC分类号： G01R27/26
CPC分类号： G01L9/0042 , B81B7/02 , B81B2201/0235 , B81B2201/0264 , B81B2207/07 , B81C2203/0118 , G01P1/023 , G01P15/0802 , G01P15/125 , H01L2224/05553 , H01L2224/05554 , H01L2224/48091 , H01L2224/48137 , H01L2224/49175 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A physical quantity sensor for detecting a physical quantity includes: a first substrate having a first physical quantity detection element; a second substrate having a second physical quantity detection element, wherein the second substrate contacts the first substrate; and an accommodation space disposed between the first substrate and the second substrate. The first physical quantity detection element is disposed in the accommodation space. The first physical quantity detection element is protected with the first substrate and the second substrate since the first physical quantity detection element is sealed in the accommodation space.
摘要翻译： 用于检测物理量的物理量传感器包括：具有第一物理量检测元件的第一基板; 具有第二物理量检测元件的第二基板，其中所述第二基板接触所述第一基板; 以及设置在第一基板和第二基板之间的容纳空间。 第一物理量检测元件设置在容纳空间中。 第一物理量检测元件被第一基板和第二基板保护，因为第一物理量检测元件被密封在容纳空间中。
-
公开(公告)号：US20080202249A1
公开(公告)日：2008-08-28
申请号：US12010758
申请日：2008-01-29
申请人： Hisanori Yokura , Yoshihiko Isobe , Eishi Kawasaki
发明人： Hisanori Yokura , Yoshihiko Isobe , Eishi Kawasaki
CPC分类号： G01L9/0055 , G01K5/52 , G01L1/2293 , H01L2224/02166 , Y10T29/49103
摘要： A semiconductor pressure sensing apparatus includes a metallic stem having a diaphragm and a semiconductor sensor bonded to the diaphragm. The semiconductor sensor includes a gauge section and first and second bonding pads. The gauge section is configured to be deformed according to a deformation of the diaphragm. The first and second bonding pads are respectively connected to different positions of the gauge section so that an electrical resistance between the first and second bonding pads can change with a change in the deformation of the diaphragm. The gauge section is formed to a semiconductor layer of an silicon-on-insulator substrate. The semiconductor sensor is directly bonded to the diaphragm by activating contact surfaces between the semiconductor sensor and the diaphragm.
摘要翻译： 一种半导体压力感测装置，包括具有隔膜的金属杆和结合到隔膜的半导体传感器。 半导体传感器包括测量部分和第一和第二接合焊盘。 仪表部分被配置为根据隔膜的变形而变形。 第一和第二接合焊盘分别连接到量规部分的不同位置，使得第一和第二接合焊盘之间的电阻随着隔膜变形的改变而改变。 测量部分形成为绝缘体上硅衬底的半导体层。 通过激活半导体传感器和隔膜之间的接触表面，半导体传感器直接接合到隔膜。
-
3.发明授权公开(公告)号：US07157781B2
公开(公告)日：2007-01-02
申请号：US10425663
申请日：2003-04-30
CPC分类号： B81C1/00047 , B81B2201/0264 , B81B2203/0127 , B81C2203/0145 , B81C2203/019 , G01L9/0042 , G01P15/0802 , G01P15/125
摘要： A semiconductor device having a membrane includes a semiconductor substrate, which has an active surface, and a membrane. A cavity is located between the active surface and the membrane and hermetically sealed. The membrane includes a first film, which has a through hole that extends through the first film, and a second film, which has been formed by reflowing a reflow layer made of a material that becomes viscous and reflows when heated. The through hole has been plugged by the second film.
摘要翻译： 具有膜的半导体器件包括具有活性表面的半导体衬底和膜。 空腔位于活性表面和膜之间并进行密封。 膜包括具有延伸穿过第一膜的通孔的第一膜和通过回流由加热时粘稠并回流的材料制成的回流层而形成的第二膜。 通孔已被第二个胶片堵住。
-
公开(公告)号：US07950288B2
公开(公告)日：2011-05-31
申请号：US12385225
申请日：2009-04-02
申请人： Tetsuo Fujii , Eishi Kawasaki
发明人： Tetsuo Fujii , Eishi Kawasaki
IPC分类号： G01R27/26
CPC分类号： G01L9/0042 , B81B7/02 , B81B2201/0235 , B81B2201/0264 , B81B2207/07 , B81C2203/0118 , G01P1/023 , G01P15/0802 , G01P15/125 , H01L2224/05553 , H01L2224/05554 , H01L2224/48091 , H01L2224/48137 , H01L2224/49175 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A physical quantity sensor for detecting a physical quantity includes: a first substrate having a first physical quantity detection element; a second substrate having a second physical quantity detection element, wherein the second substrate contacts the first substrate; and an accommodation space disposed between the first substrate and the second substrate. The first physical quantity detection element is disposed in the accommodation space. The first physical quantity detection element is protected with the first substrate and the second substrate since the first physical quantity detection element is sealed in the accommodation space.
摘要翻译： 用于检测物理量的物理量传感器包括：具有第一物理量检测元件的第一基板; 具有第二物理量检测元件的第二基板，其中所述第二基板接触所述第一基板; 以及设置在第一基板和第二基板之间的容纳空间。 第一物理量检测元件设置在容纳空间中。 第一物理量检测元件被第一基板和第二基板保护，因为第一物理量检测元件被密封在容纳空间中。
-
公开(公告)号：US20090229370A1
公开(公告)日：2009-09-17
申请号：US12385225
申请日：2009-04-02
申请人： Tetsuo Fujii , Eishi Kawasaki
发明人： Tetsuo Fujii , Eishi Kawasaki
IPC分类号： G01R27/26
CPC分类号： G01L9/0042 , B81B7/02 , B81B2201/0235 , B81B2201/0264 , B81B2207/07 , B81C2203/0118 , G01P1/023 , G01P15/0802 , G01P15/125 , H01L2224/05553 , H01L2224/05554 , H01L2224/48091 , H01L2224/48137 , H01L2224/49175 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A physical quantity sensor for detecting a physical quantity includes: a first substrate having a first physical quantity detection element; a second substrate having a second physical quantity detection element, wherein the second substrate contacts the first substrate; and an accommodation space disposed between the first substrate and the second substrate. The first physical quantity detection element is disposed in the accommodation space. The first physical quantity detection element is protected with the first substrate and the second substrate since the first physical quantity detection element is sealed in the accommodation space.
-
6.发明授权Semiconductor sensor for measuring a physical quantity and method of manufacturing the same 有权用于测量物理量的半导体传感器及其制造方法公开(公告)号：US07644623B2
公开(公告)日：2010-01-12
申请号：US12010758
申请日：2008-01-29
申请人： Hisanori Yokura , Yoshihiko Isobe , Eishi Kawasaki
发明人： Hisanori Yokura , Yoshihiko Isobe , Eishi Kawasaki
IPC分类号： G01L9/04
CPC分类号： G01L9/0055 , G01K5/52 , G01L1/2293 , H01L2224/02166 , Y10T29/49103
摘要： A semiconductor pressure sensing apparatus includes a metallic stem having a diaphragm and a semiconductor sensor bonded to the diaphragm. The semiconductor sensor includes a gauge section and first and second bonding pads. The gauge section is configured to be deformed according to a deformation of the diaphragm. The first and second bonding pads are respectively connected to different positions of the gauge section so that an electrical resistance between the first and second bonding pads can change with a change in the deformation of the diaphragm. The gauge section is formed to a semiconductor layer of an silicon-on-insulator substrate. The semiconductor sensor is directly bonded to the diaphragm by activating contact surfaces between the semiconductor sensor and the diaphragm.
摘要翻译： 一种半导体压力感测装置，包括具有隔膜的金属杆和结合到隔膜的半导体传感器。 半导体传感器包括测量部分和第一和第二接合焊盘。 仪表部分被配置为根据隔膜的变形而变形。 第一和第二接合焊盘分别连接到量规部分的不同位置，使得第一和第二接合焊盘之间的电阻随着隔膜变形的改变而改变。 测量部分形成为绝缘体上硅衬底的半导体层。 通过激活半导体传感器和隔膜之间的接触表面，半导体传感器直接接合到隔膜。
-
公开(公告)号：US20080030205A1
公开(公告)日：2008-02-07
申请号：US11808774
申请日：2007-06-12
申请人： Tetsuo Fujii , Eishi Kawasaki
发明人： Tetsuo Fujii , Eishi Kawasaki
CPC分类号： G01L9/0042 , B81B7/02 , B81B2201/0235 , B81B2201/0264 , B81B2207/07 , B81C2203/0118 , G01P1/023 , G01P15/0802 , G01P15/125 , H01L2224/05553 , H01L2224/05554 , H01L2224/48091 , H01L2224/48137 , H01L2224/49175 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A physical quantity sensor for detecting a physical quantity includes: a first substrate having a first physical quantity detection element; a second substrate having a second physical quantity detection element, wherein the second substrate contacts the first substrate; and an accommodation space disposed between the first substrate and the second substrate. The first physical quantity detection element is disposed in the accommodation space. The first physical quantity detection element is protected with the first substrate and the second substrate since the first physical quantity detection element is sealed in the accommodation space.
摘要翻译： 用于检测物理量的物理量传感器包括：具有第一物理量检测元件的第一基板; 具有第二物理量检测元件的第二基板，其中所述第二基板接触所述第一基板; 以及设置在第一基板和第二基板之间的容纳空间。 第一物理量检测元件设置在容纳空间中。 由于第一物理量检测元件被密封在容纳空间中，所以第一物理量检测元件被第一基板和第二基板保护。
-
公开(公告)号：US06933582B2
公开(公告)日：2005-08-23
申请号：US10461336
申请日：2003-06-16
申请人： Seiichiro Ishio , Eishi Kawasaki
发明人： Seiichiro Ishio , Eishi Kawasaki
IPC分类号： G01L9/00 , H01L29/84 , H01L29/8605 , H01L29/82
CPC分类号： G01L9/0054 , H01L29/8605
摘要： A semiconductor sensor includes a P-type semiconductor substrate having a N-type semiconductor layer disposed on one surface of the substrate and a P-type diffused resistor disposed in the N-type semiconductor layer. A first electric voltage is applied to the N-type semiconductor layer, a second electric voltage is applied to the substrate, a third electric voltage is applied to the P-type diffused resistor. The first electric voltage is higher than the second and third electric voltages. The sensor ensures stable operation against electric leakage and high noise protection because two depletion layers are formed.
摘要翻译： 半导体传感器包括具有设置在基板的一个表面上的N型半导体层的P型半导体基板和设置在N型半导体层中的P型扩散电阻器。 向N型半导体层施加第一电压，向基板施加第二电压，向P型扩散电阻施加第三电压。 第一电压高于第二和第三电压。 该传感器确保了稳定的操作，防止漏电和高噪声保护，因为形成了两个耗尽层。
-
9.发明授权Semiconductor physical quantity sensor having movable portion and fixed portion confronted each other and method of manufacturing the same 有权具有可动部分和固定部分的半导体物理量传感器彼此面对并且其制造方法公开(公告)号：US06276207B1
公开(公告)日：2001-08-21
申请号：US09438293
申请日：1999-11-12
申请人： Minekazu Sakai , Yukihiro Takeuchi , Inao Toyoda , Seiichiro Ishio , Toshimasa Yamamoto , Eishi Kawasaki , Minoru Murata , Hiroshi Muto
发明人： Minekazu Sakai , Yukihiro Takeuchi , Inao Toyoda , Seiichiro Ishio , Toshimasa Yamamoto , Eishi Kawasaki , Minoru Murata , Hiroshi Muto
IPC分类号： G01P1500
CPC分类号： B81C1/00928 , B81B3/0008 , B81B3/001 , B81B2201/0235 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A semiconductor acceleration sensor, which prevents an adhesion of a movable portion to a fixed portion due to an electrostatic force generated during being handled. The acceleration sensor has a sensor portion and a handling portion. The sensor portion has a first semiconductor layer; a movable portion including a weight portion supported to the first semiconductor layer for moving in accordance with an acceleration externally applied thereto and movable electrodes integrally formed with the weight portion; and fixed electrodes having a detection surface confronted to a detection surface of the movable electrodes and supported to the first semiconductor layer. The handling portion is to be contacted during being handled, and is provided at surrounding portion of the sensor portion with a trench interposed therebetween. The sensor portion is electrically insulated from the handling portion by the trench.
摘要翻译： 一种半导体加速度传感器，其防止由于在处理期间产生的静电力而将可动部分粘附到固定部分。 加速度传感器具有传感器部分和处理部分。 传感器部分具有第一半导体层; 可移动部分，包括支撑到第一半导体层的重量部分，用于根据向外施加的加速度以及与重物部分整体形成的可动电极; 以及固定电极，其具有与可动电极的检测面相对的支撑于第一半导体层的检测面。 处理部分在处理时被接触，并且在传感器部分的周围部分处设置有介于其间的沟槽。 传感器部分通过沟槽与处理部分电绝缘。
-
公开(公告)号：US4881056A
公开(公告)日：1989-11-14
申请号：US180134
申请日：1988-04-11
CPC分类号： G01L19/0061 , G01L19/147 , G01L9/0042 , G01L9/0054
摘要： A facedown-type semiconductor pressure sensor has a Si sensing element including a diaphragm, a spacer, and a piezoresistive device embedded in the diaphragm, and a pedestal. The spacer, which is positioned between the semiconductor substrate and the pedestal, has a photolitho-graphically etched hole such that the sensing element, the hole and the pedestal define a sealed chamber. The sealed pressure chamber is substantially aligned with the diaphragm.
摘要翻译： 面向下的半导体压力传感器具有Si感测元件，其包括隔膜，间隔件和嵌入隔膜中的压阻器件和基座。 位于半导体基板和基座之间的间隔件具有光刻蚀刻的孔，使得感测元件，孔和基座限定了密封室。 密封的压力室基本上与隔膜对准。
-
-
-
-
-
-
-
-
-
搜索结果
14 条记录 (耗时 0.133 秒)
