知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

233 条记录 (耗时 0.021 秒)

    Single crystal silicon sensor with high aspect ratio and curvilinear structures and associated method
    1.
    发明申请
    Single crystal silicon sensor with high aspect ratio and curvilinear structures and associated method 审中-公开
    具有高纵横比和曲线结构的单晶硅传感器及相关方法

    公开(公告)号：US20030205739A1

    公开(公告)日：2003-11-06

    申请号：US09928194

    申请日：2001-08-11

    发明人： Kurt E. Petersen ,  Nadim Maluf ,  Wendell McCulley ,  John Logan ,  Erno Klaasen ,  Jan Mark Noworolski

    IPC分类号： H01L029/768 ,  H01L027/148

    CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P2015/0814 ,  Y10S73/01

    摘要： In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.

    摘要翻译： 一方面，本发明提供了包括第一单晶硅晶片层的半导体传感器。 在第一晶片层中形成单晶硅结构。 该结构包括两个相对布置的基本垂直的主表面和两个相对布置的大体水平的小的表面。 主表面与次表面的纵横比至少为5：1。 包括凹陷区域的载体被固定到第一晶片层，使得所述结构与凹陷区域相对地悬挂。

    Single crystal silicon sensor with high aspect ratio and curvilinear structures and associated method
    2.
    发明申请
    Single crystal silicon sensor with high aspect ratio and curvilinear structures and associated method 审中-公开
    具有高纵横比和曲线结构的单晶硅传感器及相关方法

    公开(公告)号：US20010020726A1

    公开(公告)日：2001-09-13

    申请号：US09816303

    申请日：2001-03-21

    发明人： Kurt Peterson ,  Nadim Maluf ,  Wendell McCulley ,  John Logan ,  Erno Klaasen ,  Jan Noworolski

    IPC分类号： H01L021/00 ,  H01L029/82

    CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P2015/0814 ,  Y10S73/01

    摘要： In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.

    摘要翻译： 一方面，本发明提供了包括第一单晶硅晶片层的半导体传感器。 在第一晶片层中形成单晶硅结构。 该结构包括两个相对布置的基本垂直的主表面和两个相对布置的大体水平的小的表面。 主表面与次表面的纵横比至少为5：1。 包括凹陷区域的载体被固定到第一晶片层，使得所述结构与凹陷区域相对地悬挂。

    Method and apparatus for measuring the damping characteristics of a friction member
    3.
    发明授权
    Method and apparatus for measuring the damping characteristics of a friction member 失效
    用于测量摩擦构件的阻尼特性的方法和装置

    公开(公告)号：US06145382A

    公开(公告)日：2000-11-14

    申请号：US137696

    申请日：1998-08-21

    申请人： Yuji Nagasawa ,  Masataka Osawa ,  Noriyasu Yamada ,  Fumio Ueda

    发明人： Yuji Nagasawa ,  Masataka Osawa ,  Noriyasu Yamada ,  Fumio Ueda

    IPC分类号： G01M99/00 ,  G01M17/007 ,  G01N19/02 ,  G01N29/12

    CPC分类号： G01N19/02 ,  Y10S73/01

    摘要： A method for measuring damping characteristics of a friction member include: relatively pressing a first member as a friction member to be measured against a second member, for relatively sliding with respect to a second member and vibrating, measuring vibration states of the pressed first and second members, and measuring variations in the vibration states of the pressed first and second members and measuring damping characteristics of the friction member to be measured against vibrations by comparing damped amounts based on the variations in the vibration states of the first and second members. The above method and an apparatus therefor enable detailed evaluations of friction member having high performance.

    摘要翻译： 一种用于测量摩擦构件的阻尼特性的方法包括：相对于相对于第二构件相对地相对于第二构件相对滑动地相对地按压作为待测摩擦构件的第一构件相对于第二构件，并且振动，测量被按压的第一和第二构件的振动状态 并且测量被压制的第一和第二构件的振动状态的变化，并且通过基于第一和第二构件的振动状态的变化比较阻尼量来测量待测量的摩擦构件的抗振动的阻尼特性。 上述方法及其装置使得能够对具有高性能的摩擦构件进行详细评估。

    Transducer and interface circuit
    6.
    发明授权
    Transducer and interface circuit 失效
    传感器和接口电路

    公开(公告)号：US6043524A

    公开(公告)日：2000-03-28

    申请号：US792843

    申请日：1997-02-03

    申请人： Eric D. Joseph ,  Barun K. Kar

    发明人： Eric D. Joseph ,  Barun K. Kar

    IPC分类号： G01P15/12 ,  H01L29/82

    CPC分类号： G01P15/124 ,  Y10S73/01

    摘要： A sensor (100) includes a fixed gate field-effect transistor (138) that produces a quiescent signal (V.sub.QUIESC1) in a channel (336) when a control signal (V.sub.CONTROL) is applied to a source (332) of the FGFET. A movable gate field-effect transistor (MGFET) (108) produces a sense signal (V.sub.ACCEL) in a channel (316) in response to a physical condition of the sensor when the control signal is applied to a source (312) of the MGFET such that the sense signal is proportional to the quiescent signal. The difference between the currents in the FGFET and MGFET is amplified by a differential amplifier (230) to produce the output signal (V.sub.OUT) of the sensor. The difference between a reference signal (V.sub.RATIO) and the quiescent signal is amplified in an amplifier (206) to produce the control signal that adjusts the output signal to be proportional to the reference signal.

    摘要翻译： 当控制信号（VCONTROL）被施加到FGFET的源（332）时，传感器（100）包括固定栅极场效应晶体管（138），其在通道（336）中产生静态信号（VQUIESC1）。 当控制信号被施加到MGFET的源（312）时，可移动门场效应晶体管（MGFET）（108）响应于传感器的物理状态在通道（316）中产生感测信号（VACCEL） 使得感测信号与静态信号成比例。 FGFET和MGFET中的电流之间的差异由差分放大器（230）放大，以产生传感器的输出信号（VOUT）。 参考信号（VRATIO）和静态信号之间的差异在放大器（206）中被放大，以产生调节输出信号与参考信号成比例的控制信号。

    Scan assembly and method for calibrating the width of an input pulse to an ultrasonic transducer of the scan assembly
    7.
    发明授权
    Scan assembly and method for calibrating the width of an input pulse to an ultrasonic transducer of the scan assembly 失效
    用于将输入脉冲的宽度校准到扫描组件的超声换能器的扫描组件和方法

    公开(公告)号：US6035696A

    公开(公告)日：2000-03-14

    申请号：US833805

    申请日：1997-04-09

    申请人： Karl F. Kiefer ,  Donald L. Chaffee

    发明人： Karl F. Kiefer ,  Donald L. Chaffee

    IPC分类号： G01H13/00 ,  H04B17/00

    CPC分类号： G01H13/00 ,  Y10S73/01

    摘要： An ultrasonic scan assembly is adapted to efficiently and accurately scan a surface and cross-section of a wall of an underground gas pipe with ultrasonic energy transmitted and received by an ultrasonic transducer provided therein. The input pulse applied to the ultrasonic transducer is calibrated so that its width matches the natural mechanical resonant frequency of the ultrasonic transducer. As a result, the energy efficiency of the transducer is maximized and the accuracy of the scan is improved.

    摘要翻译： 超声波扫描组件适用于通过设置在其中的超声波换能器传输和接收的超声波能量来高效地和准确地扫描地下气管的壁的表面和横截面。 校准超声波换能器的输入脉冲，使其宽度与超声波换能器的天然机械共振频率相匹配。 结果，传感器的能量效率最大化并且扫描的精度得到改善。

    PZT microdevice
    9.
    发明授权
    PZT microdevice 失效
    PZT微型设备

    公开(公告)号：US5914507A

    公开(公告)日：1999-06-22

    申请号：US739808

    申请日：1996-10-30

    申请人： Dennis L. Polla ,  Joon Han Kim

    发明人： Dennis L. Polla ,  Joon Han Kim

    IPC分类号： H01L41/09 ,  H01L29/82

    CPC分类号： H01L41/094 ,  H01L41/0973 ,  Y10S73/01 ,  Y10S73/04

    摘要： A micromechanical device or microactuator based upon the piezoelectric, pyroelectric, and electrostrictive properties of ferroelectric thin film ceramic materials such as PZT. The microdevice has a device substrate and a deflectable component. The deflectable component is mounted for deflection on the device substrate and has a sensor/actuator. The sensor/actuator has first and second electrodes and a piezoelectric thin film disposed between the first and second electrodes. The thin film is preferably PZT. The sensor/actuator is disposed on a sensor/actuator substrate. The sensor/actuator substrate is formed of a material selected for being resistive to attack by hydrofluoric acid vapor. The invention also relates to a method for fabricating such micromechanical devices or microactuators.

    摘要翻译： 基于铁电薄膜陶瓷材料如PZT的压电，热释电和电致伸缩特性的微机械装置或微型致动器。 微型装置具有装置基板和可偏转部件。 可偏转部件被安装用于偏转在装置基板上并且具有传感器/致动器。 传感器/致动器具有设置在第一和第二电极之间的第一和第二电极和压电薄膜。 该薄膜优选为PZT。 传感器/致动器设置在传感器/致动器基板上。 传感器/致动器基板由选择用于耐受氢氟酸蒸气侵蚀的材料形成。 本发明还涉及一种用于制造这种微机械装置或微型致动器的方法。