摘要:
In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.
摘要:
In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.
摘要:
A method for measuring damping characteristics of a friction member include: relatively pressing a first member as a friction member to be measured against a second member, for relatively sliding with respect to a second member and vibrating, measuring vibration states of the pressed first and second members, and measuring variations in the vibration states of the pressed first and second members and measuring damping characteristics of the friction member to be measured against vibrations by comparing damped amounts based on the variations in the vibration states of the first and second members. The above method and an apparatus therefor enable detailed evaluations of friction member having high performance.
摘要:
In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.
摘要:
A symmetrical link device for linking first and second coplanar devices each movably mounted in a frame such that when one of the first and second coplanar devices is moved, a substantially equal and opposite motion is imparted to the other of the first and second coplanar devices.
摘要:
A sensor (100) includes a fixed gate field-effect transistor (138) that produces a quiescent signal (V.sub.QUIESC1) in a channel (336) when a control signal (V.sub.CONTROL) is applied to a source (332) of the FGFET. A movable gate field-effect transistor (MGFET) (108) produces a sense signal (V.sub.ACCEL) in a channel (316) in response to a physical condition of the sensor when the control signal is applied to a source (312) of the MGFET such that the sense signal is proportional to the quiescent signal. The difference between the currents in the FGFET and MGFET is amplified by a differential amplifier (230) to produce the output signal (V.sub.OUT) of the sensor. The difference between a reference signal (V.sub.RATIO) and the quiescent signal is amplified in an amplifier (206) to produce the control signal that adjusts the output signal to be proportional to the reference signal.
摘要:
An ultrasonic scan assembly is adapted to efficiently and accurately scan a surface and cross-section of a wall of an underground gas pipe with ultrasonic energy transmitted and received by an ultrasonic transducer provided therein. The input pulse applied to the ultrasonic transducer is calibrated so that its width matches the natural mechanical resonant frequency of the ultrasonic transducer. As a result, the energy efficiency of the transducer is maximized and the accuracy of the scan is improved.
摘要:
A sensor element provided with a silicon substrate having a semiconductor circuit, a sensing-element portion formed on the silicon substrate and connected to the semiconductor circuit, and a cavity portion formed by removing a silicon substrate portion below the sensing-element portion, in which a removal resistance region having resistance against substrate removal is provided in the silicon substrate between the semiconductor circuit and the cavity portion.
摘要:
A micromechanical device or microactuator based upon the piezoelectric, pyroelectric, and electrostrictive properties of ferroelectric thin film ceramic materials such as PZT. The microdevice has a device substrate and a deflectable component. The deflectable component is mounted for deflection on the device substrate and has a sensor/actuator. The sensor/actuator has first and second electrodes and a piezoelectric thin film disposed between the first and second electrodes. The thin film is preferably PZT. The sensor/actuator is disposed on a sensor/actuator substrate. The sensor/actuator substrate is formed of a material selected for being resistive to attack by hydrofluoric acid vapor. The invention also relates to a method for fabricating such micromechanical devices or microactuators.
摘要:
A single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independently of crystal orientation.