公开(公告)号：US20040266048A1

公开(公告)日：2004-12-30

申请号：US10899474

申请日：2004-07-26

申请人： Honeywell International Inc.

发明人： William P. Platt ,  Carol M. Ford

IPC分类号： H01L021/44 ,  H01L029/82

CPC分类号： B81C1/00269 ,  B81C2203/0109 ,  B81C2203/038 ,  H01L2224/48247

摘要： A method of bonding and packaging components of Micro-Electro-Mechanical Systems (MEMS) and MEMS based devices using a Solid-Liquid InterDiffusion (SLID) process is provided. A micro-machine is bonded to a micro-machine chip using bonding materials. A layer of chromium is first deposited onto surfaces of the micro-machine and the micro-machine chip followed by a layer of gold. Subsequently, a layer of indium is deposited between the layers of gold, and the surface of the micro-machine is pressed against the surface of the micro-machine chip forming a gold-indium alloy to serve as a bond between the micro-machine and the micro-machine chip. In addition, a cover is bonded to the micro-machine chip in the same manner providing a hermetic seal for the MEMS based device.

公开(公告)号：US20040232505A1

公开(公告)日：2004-11-25

申请号：US10877874

申请日：2004-06-26

发明人： Garret Moddel ,  Blake J. Eliasson

IPC分类号： H01L021/00 ,  H01L029/82

CPC分类号： H01L27/1446 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L29/7311 ,  H01L29/7606 ,  H01L29/82 ,  H01L31/08 ,  H01L31/101 ,  H01L33/0004 ,  H01L33/0037 ,  H01L39/22 ,  H01L45/00

摘要： A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it to a specific location within the detector. The detector also includes an arrangement serving as a transport of electrons, including tunneling, between and to the first and second non-insulating layers when electromagnetic radiation is received at the antenna. The arrangement includes a first insulating layer and a second layer configured such that using only the first insulating in the arrangement would result in a given value of nonlinearity in the transport of electrons while the inclusion of the second layer increases the nonlinearity above the given value. A portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal at an output.

摘要翻译： 检测器包括用于提供偏置电压的电压源和第一和第二非绝缘层，其间隔开，使得偏置电压可以在其间施加，并形成用于接收电磁辐射的天线，并将其引导到位于 探测器。 当在天线处接收到电磁辐射时，检测器还包括用作电子传输的装置，包括隧穿，并在第一和第二非绝缘层之间和之间。 该布置包括第一绝缘层和第二层，其被配置为使得仅使用布置中的第一绝缘体将导致电子传输中的非线性的给定值，而包含第二层的非线性增加了高于给定值的非线性。 入射在天线上的电磁辐射的一部分在输出端被转换成电信号。

公开(公告)号：US20040232504A1

公开(公告)日：2004-11-25

申请号：US10876140

申请日：2004-06-24

申请人： Wisconsin Alumni Research Foundation

发明人： Amit Lal ,  Max G. Lagally ,  Chung Hoon Lee ,  Paul Powell Rugheimer

IPC分类号： H01L029/82

CPC分类号： B81C1/00666 ,  B81C2201/0167 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/78603 ,  H01L29/78639 ,  Y10S438/962

摘要： A suspended semiconductor film is anchored to a substrate at at least two opposed anchor positions, and film segments are deposited on the semiconductor film adjacent to one or more of the anchor positions to apply either tensile or compressive stress to the semiconductor film between the film segments. A crystalline silicon film may be anchored to the substrate and have tensile stress applied thereto to reduce the lattice mismatch between the silicon and a silicon-germanium layer deposited onto the silicon film. By controlling the level of stress in the silicon film, the size, density and distribution of quantum dots formed in a high germanium content silicon-germanium film deposited on the silicon film can be controlled.

摘要翻译： 悬浮的半导体膜在至少两个相对的锚固位置处锚定到基底，并且膜部分沉积在与一个或多个锚定位置相邻的半导体膜上，以将拉伸或压缩应力施加到膜段之间的半导体膜 。 结晶硅膜可以锚定到基底并且施加拉伸应力以减小硅和沉积在硅膜上的硅 - 锗层之间的晶格失配。 通过控制硅膜中的应力水平，可以控制沉积在硅膜上的高锗含量硅 - 锗膜中形成的量子点的尺寸，密度和分布。

公开(公告)号：US20040222478A1

公开(公告)日：2004-11-11

申请号：US10814816

申请日：2004-03-31

申请人： Silicon Laboratories, Inc.

发明人： Ligang Zhang ,  Adam B. Eldredge ,  Axel Thomsen ,  Abhay Misra

IPC分类号： H01L029/82

CPC分类号： H01L23/552 ,  H01F2017/008 ,  H01L23/645 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/3025 ,  H01L2224/0401

摘要： In some embodiments of the present invention, an apparatus includes an electromagnetic shielding structure. The electromagnetic shielding structure is formed at least partially in one or more redistribution layers formed on an integrated circuit die. The electromagnetic shielding structure substantially surrounds a circuit element, such as an inductor structure. The circuit element may be formed at least partially in the one or more redistribution layers. An inductor structure may be constructed as a loop structure at least partially in one or more redistribution layers formed on the integrated circuit die. The shielding structure may be formed at least partially in one or more redistribution layers of the integrated circuit die to enclose the inductor in a Faraday cage-like enclosure. The redistribution layers may be formed above integrated circuit pads or above a passivation layer of the integrated circuit die.

摘要翻译： 在本发明的一些实施例中，一种装置包括电磁屏蔽结构。 电磁屏蔽结构至少部分地形成在集成电路管芯上形成的一个或多个再分配层中。 电磁屏蔽结构基本上围绕诸如电感器结构的电路元件。 电路元件可以至少部分地形成在一个或多个再分配层中。 电感器结构可以被构造为至少部分地在形成在集成电路管芯上的一个或多个再分配层中的环路结构。 屏蔽结构可以至少部分地形成在集成电路管芯的一个或多个再分布层中，以将电感器包围在法拉第笼状外壳中。 再分配层可以形成在集成电路焊盘上方或集成电路管芯的钝化层之上。

公开(公告)号：US20040207034A1

公开(公告)日：2004-10-21

申请号：US10616205

申请日：2003-07-10

发明人： Minekazu Sakai

IPC分类号： H01L029/82

CPC分类号： B81B3/0072 ,  B81B2201/0235 ,  B81B2203/0136 ,  G01P15/125 ,  G01P2015/0814

摘要： A capacitive dynamic quantity sensor includes a substrate, a weight, a movable electrode, an anchor, a fixed electrode, a spring, and a strain buffer. The weight is displaced by a dynamic quantity. The movable electrode is integrated with the weight. The anchor is fixed to the substrate to suspend the weight and the movable electrode above the substrate. The fixed electrode is arranged to face the movable electrode. The displacement of the movable electrode caused in response to the dynamic quantity is detected as a capacitance variation between the electrodes. The spring is located between the anchor and the weight and resiliently deforms in response to the dynamic quantity such that the movable electrode is displaced by a distance corresponding to the dynamic quantity. The strain buffer is located between the anchor and the spring to reduce the influence of a strain generated in the substrate on the spring.

摘要翻译： 电容动态量传感器包括基板，重物，可动电极，锚固件，固定电极，弹簧和应变缓冲器。 重量由动态数量所取代。 可动电极与重量一体。 锚固件固定到基板上，以将重物和可动电极悬挂在基板上方。 固定电极布置成面对可动电极。 检测到响应于动态量而引起的可移动电极的位移作为电极之间的电容变化。 弹簧位于锚固件和重物之间，并且响应于动态量而弹性变形，使得可移动电极移动与动态量相对应的距离。 应变缓冲器位于锚固件和弹簧之间，以减少在基板上产生的应变对弹簧的影响。

公开(公告)号：US20040188783A1

公开(公告)日：2004-09-30

申请号：US10806405

申请日：2004-03-23

发明人： Hideyuki Funaki

IPC分类号： H01L021/00 ,  H02N001/00 ,  H01H057/00 ,  H01L029/82

CPC分类号： H03H9/462 ,  B81B3/0021 ,  B81B2201/016 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81B2203/051 ,  H01H13/80 ,  H01H59/0009 ,  H01H2001/0078 ,  H01H2201/008 ,  H03H3/0072

摘要： A micromechanical switch comprises a substrate, at least one pair of support members fixed to the substrate, at least one pair of beam members placed in proximity and parallel to each other above the substrate, and connected to one of the support members, respectively, each of the beam members having a moving portion which is movable with a gap with respect to the substrate, and a contact portion provided on the moving portion, and a driving electrode placed on the substrate between the pair of beam members to attract the moving portions of the beam members in a direction parallel to the substrate with electrostatic force so that the contact portions of the beam members which are opposed to each other are short-circuited.

摘要翻译： 微机械开关包括基板，固定到基板的至少一对支撑构件，至少一对梁构件，其彼此靠近并平行放置在基板上方并分别连接到支撑构件之一 所述梁构件具有可相对于所述基板间隙移动的移动部分和设置在所述移动部分上的接触部分，以及设置在所述一对梁构件之间的所述基板上的驱动电极，以吸引所述移动部分的移动部分 梁构件在与静电力平行的方向上使得梁构件彼此相对的接触部分短路。

公开(公告)号：US20040183150A1

公开(公告)日：2004-09-23

申请号：US10390628

申请日：2003-03-19

申请人： Asia Pacific Microsystems, Inc.

发明人： Hung-Dar Wang ,  Shih-Chin Gong

IPC分类号： H01L029/82

CPC分类号： G01L9/0054

摘要： The present invention relates to a silicon pressure sensor that in need of three strips of piezoresistors on each side and the manufacturing method thereof; wherein, the impurity concentration of the piezoresistors are about 1019-1020 cmnull3 in order to reduce the influence of temperature; the lead between the piezoresistors (namely the internal connection lead) is a highly-doping interconnect (about 1021 cmnull3) fabricated along the direction with minimum piezoresistance coefficient; with regard to the connection circuit for connecting the piezoresistors with the external Wheatstone bridge circuit (namely the external connection circuit), of which one end near the inner side of the membrane is also fabricated along the direction with minimum piezoresistance coefficient, and another end of the lead near the edge of the membrane is a interconnect that is perpendicular to the diaphragm, and is connected out to the external circuit; with this structure, the four resistors of the Whetstone bridge are balanced and symmetrized, thus the zero offset caused by the variations in resistance of the bridge can be reduced in order to simplify the signal-processing circuit.

摘要翻译： 硅压力传感器及其制造方法技术领域本发明涉及一种硅压力传感器及其制造方法，所述硅压力传感器在每侧需要三条压敏电阻片; 其中为了降低温度的影响，压敏电阻的杂质浓度为约10〜10 20 cm -3 -3。 压敏电阻器之间的引线（即内部连接引线）是沿着具有最小压阻系数的方向制造的高度掺杂的互连（约10 21 cm -3）; 关于将压电电阻与外部惠斯通电桥电路（即外部连接电路）连接的连接电路，其膜的内侧附近的一端也沿着具有最小压阻系数的方向制造，另一端 膜边缘附近的引线是与隔膜垂直的互连线，并连接到外部电路; 通过这种结构，Whetstone桥的四个电阻器被平衡和对称化，因此可以减小由桥的电阻变化引起的零点偏移，以简化信号处理电路。

公开(公告)号：US20040166602A1

公开(公告)日：2004-08-26

申请号：US10758877

申请日：2004-01-16

发明人： Ye Wang ,  Norman C. Tien

IPC分类号： H01L021/00 ,  H01L029/82

CPC分类号： H01H61/04 ,  H01H2001/0078 ,  H01H2061/006

摘要： One embodiment of the present invention relates to a lateral-contact microrelay with an electro-thermal actuator. This microrelay includes a contact head configured to make an electrical connection between a first signal line and a second signal line. It also includes an electro-thermal actuator, which is coupled to the contact head and is configured to laterally displace the contact head so that the closing action of the contact head is parallel to the plane of the semiconductor wafer upon which the microrelay is fabricated. In a variation on this embodiment, the electro-thermal actuator comprises a substantially V-shaped beam, wherein thermal expansion caused by current flowing through the substantially V-shaped beam actuates the contact head to make the electrical connection between the first signal line and the second signal line.

摘要翻译： 本发明的一个实施例涉及一种具有电热致动器的侧向接触微型继电器。 该微型继电器包括被配置为在第一信号线和第二信号线之间进行电连接的接触头。 它还包括电热致动器，其耦合到接触头并且被配置为横向移位接触头，使得接触头的闭合动作平行于制造微续流器的半导体晶片的平面。 在该实施例的变型中，电热致动器包括基本上为V形的梁，其中由流过大致V形梁的电流引起的热膨胀致动接触头，以使第一信号线和第二信号线之间的电连接 第二信号线。

公开(公告)号：US20040140514A1

公开(公告)日：2004-07-22

申请号：US10682107

申请日：2003-10-09

发明人： Alan Elbanhawy

IPC分类号： H01L029/82

CPC分类号： H01L27/22

摘要： Semiconductor devices containing a MOSFET and an on-chip current sensor in the form of a magnetic resistive element are described. The magnetic resistive element (MRE) is proximate the MOSFET in the semiconductor device. The current flowing through the MOSFET generates a magnetic field that is detected by the MRE. The MRE comprises a metal film that is placed proximate the MOSFET during the normal fabrication processes, thereby adding little to the manufacturing complexity or cost. Using the MRE adds an accurate, effective, and cheap method to measure currents in MOSFET devices.

摘要翻译： 描述了包含MOSFET的片状电流传感器和磁阻元件形式的半导体器件。 磁阻元件（MRE）位于半导体器件中的MOSFET附近。 流过MOSFET的电流产生由MRE检测的磁场。 MRE包括在正常制造工艺期间放置在MOSFET附近的金属膜，从而增加了制造复杂性或成本。 使用MRE增加了一种准确，有效和便宜的方法来测量MOSFET器件中的电流。

公开(公告)号：US20040105194A1

公开(公告)日：2004-06-03

申请号：US10307062

申请日：2002-11-29

发明人： Robert E. Fontana JR. ,  Jeffrey S. Lille

IPC分类号： G11B005/39 ,  H01L029/82

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B2005/0008 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302 ,  H01F41/325 ,  H01L29/66984

摘要： A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, a first insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a second insulating layer adjacent the bias layer, and a ferromagnetic layer over the second insulating layer, wherein the first insulating layer and the second insulating layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the first insulating layer and the second insulating layer. The bias layer is magnetic and is at least three times the thickness of the base region.

摘要翻译： 自旋阀晶体管（SVT）的方法和结构包括磁场传感器，与磁场传感器相邻的第一绝缘层，邻近绝缘层的偏置层，与偏置层相邻的第二绝缘层，以及铁磁层 所述第二绝缘层，其中所述第一绝缘层和所述第二绝缘层包括反铁磁材料。 磁场传感器包括基极区域，邻近基极区域的集电极区域，邻近基极区域的发射极区域和位于基极区域和发射极区域之间的势垒区域。 偏置层位于第一绝缘层和第二绝缘层之间。 偏置层是磁性的，并且是基极区域的厚度的至少三倍。