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1.发明授权Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs 有权用于CMOS架构的隧道场效应晶体管（TFET）和制造N型和P型TFET的方法公开(公告)号：US09583602B2
公开(公告)日：2017-02-28
申请号：US15209552
申请日：2016-07-13
申请人： Roza Kotlyar , Stephen M. Cea , Gilbert Dewey , Benjamin Chu-Kung , Uygar E. Avci , Rafael Rios , Anurag Chaudhry , Thomas D. Linton, Jr. , Ian A. Young , Kelin J. Kuhn
发明人： Roza Kotlyar , Stephen M. Cea , Gilbert Dewey , Benjamin Chu-Kung , Uygar E. Avci , Rafael Rios , Anurag Chaudhry , Thomas D. Linton, Jr. , Ian A. Young , Kelin J. Kuhn
IPC分类号： H01L29/66 , H01L29/78 , H01L29/739 , H01L29/16 , H01L29/161 , H01L29/06 , H01L29/24 , H01L29/267 , H01L27/092 , H01L29/04 , H01L29/10 , H01L29/165 , H01L29/20 , H01L29/423 , H01L29/786
CPC分类号： H01L29/66977 , H01L27/092 , H01L29/045 , H01L29/0676 , H01L29/068 , H01L29/1054 , H01L29/16 , H01L29/161 , H01L29/165 , H01L29/20 , H01L29/24 , H01L29/267 , H01L29/42392 , H01L29/7391 , H01L29/7842 , H01L29/785 , H01L29/78603 , H01L29/78642 , H01L29/78684 , H01L29/78696
摘要： Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion.
摘要翻译： 描述了用于CMOS架构的隧道场效应晶体管（TFET）和制造N型和P型TFET的方法。 例如，隧道场效应晶体管（TFET）包括设置在衬底上方的均质有源区。 同质结有源区包括其中具有未掺杂沟道区的松弛Ge或GeSn体。 同质结有源区还包括设置在放大的Ge或GeSn体中，在沟道区两侧的掺杂源极和漏极区。 TFET还包括设置在沟道区域之间的源极和漏极区域之间的栅极堆叠。 栅极堆叠包括栅极电介质部分和栅极电极部分。
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2.发明申请公开(公告)号：US20160322480A1
公开(公告)日：2016-11-03
申请号：US15209552
申请日：2016-07-13
申请人： Roza Kotlyar , Stephen M. Cea , Gilbert Dewey , Benjamin Chu-Kung , Uygar E. Avci , Rafael Rios , Anurag Chaudhry , Thomas D. Linton, JR. , Ian A. Young , Kelin J. Kuhn
发明人： Roza Kotlyar , Stephen M. Cea , Gilbert Dewey , Benjamin Chu-Kung , Uygar E. Avci , Rafael Rios , Anurag Chaudhry , Thomas D. Linton, JR. , Ian A. Young , Kelin J. Kuhn
IPC分类号： H01L29/66 , H01L29/06 , H01L29/165 , H01L27/092 , H01L29/161 , H01L29/10 , H01L29/20 , H01L29/04 , H01L29/786 , H01L29/423
CPC分类号： H01L29/66977 , H01L27/092 , H01L29/045 , H01L29/0676 , H01L29/068 , H01L29/1054 , H01L29/16 , H01L29/161 , H01L29/165 , H01L29/20 , H01L29/24 , H01L29/267 , H01L29/42392 , H01L29/7391 , H01L29/7842 , H01L29/785 , H01L29/78603 , H01L29/78642 , H01L29/78684 , H01L29/78696
摘要： Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion.
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公开(公告)号：US20150025801A1
公开(公告)日：2015-01-22
申请号：US13752030
申请日：2013-01-28
申请人： Thomas D. Linton , Michael T. Fox , Bruce E. Exely
发明人： Thomas D. Linton , Michael T. Fox , Bruce E. Exely
IPC分类号： G01C19/04
CPC分类号： G01C19/04 , G01C19/00 , G01C25/005
摘要： Methods, devices, and systems are presented for compensating for gyroscopic drift in a stabilized gimbal system mounted on a vehicle. When the vehicle is parked and the gimbal is not being commanded to move by an operator, encoders or resolvers of the gimbal stabilized system are read and periodically read thereafter. When the vehicle begins to move or the gimbal is commanded to move, the last periodic reading of the resolvers is used to determine the amount that the gimbal has moved during the rest period. A gyroscopic drift rate is computed by dividing the amount of angular movement by the time period between the readings, and the gyroscopic drift rate is used for corrections while the vehicle is moving or gimbal is commanded to move. Each time the vehicle stops, the gyroscopic drift rate is re-computed and updated. The gyroscope can be heated until the drift rate is constant with respect to temperature, further helping the calibration.
摘要翻译： 提出了用于补偿安装在车辆上的稳定的万向节系统中的陀螺漂移的方法，装置和系统。 当车辆停放并且操作者未命令移动万向架时，读取万向节稳定系统的编码器或旋转变压器，并在此之后定期读取。 当车辆开始移动或者万向节被命令移动时，解析器的最后一次定期读数用于确定万向节在休息期间移动的量。 通过将角运动量除以读数之间的时间周期来计算陀螺仪漂移率，并且在车辆移动或者万向节命令移动时使用陀螺漂移速率进行校正。 每次停车时，重新计算和更新陀螺漂移率。 可以加热陀螺仪直到漂移速率相对于温度恒定，进一步有助于校准。
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4.发明申请TUNNELING FIELD EFFECT TRANSISTORS (TFETS) FOR CMOS ARCHITECTURES AND APPROACHES TO FABRICATING N-TYPE AND P-TYPE TFETS 审中-公开用于CMOS结构的隧道场效应晶体管（TFET）和制造N型和P型TFETS的方法公开(公告)号：US20150041847A1
公开(公告)日：2015-02-12
申请号：US14521200
申请日：2014-10-22
申请人： Roza Kotlyar , Stephen M. Cea , Gilbert Dewey , Benjamin Chu-Kung , Uygar E. Avci , Rafael Rios , Anurag Chaudhry , Thomas D. Linton, JR. , Ian A. Young , Kelin J. Kuhn
发明人： Roza Kotlyar , Stephen M. Cea , Gilbert Dewey , Benjamin Chu-Kung , Uygar E. Avci , Rafael Rios , Anurag Chaudhry , Thomas D. Linton, JR. , Ian A. Young , Kelin J. Kuhn
IPC分类号： H01L29/78 , H01L29/267 , H01L29/06 , H01L29/24 , H01L29/16
CPC分类号： H01L29/66977 , H01L27/092 , H01L29/045 , H01L29/0676 , H01L29/068 , H01L29/1054 , H01L29/16 , H01L29/161 , H01L29/165 , H01L29/20 , H01L29/24 , H01L29/267 , H01L29/42392 , H01L29/7391 , H01L29/7842 , H01L29/785 , H01L29/78603 , H01L29/78642 , H01L29/78684 , H01L29/78696
摘要： Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion.
摘要翻译： 描述了用于CMOS架构的隧道场效应晶体管（TFET）和制造N型和P型TFET的方法。 例如，隧道场效应晶体管（TFET）包括设置在衬底上方的均质有源区。 同质结有源区包括其中具有未掺杂沟道区的松弛Ge或GeSn体。 同质结有源区还包括设置在放大的Ge或GeSn体中，在沟道区两侧的掺杂源极和漏极区。 TFET还包括设置在沟道区域之间的源极和漏极区域之间的栅极堆叠。 栅极堆叠包括栅极电介质部分和栅极电极部分。
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5.发明授权公开(公告)号：US08833232B1
公开(公告)日：2014-09-16
申请号：US13691457
申请日：2012-11-30
CPC分类号： F41A27/28 , F41A23/24 , F41A27/18 , F41A27/20 , F41G3/06 , F41G3/10 , F41G3/165 , F41G3/22 , F41G5/20 , F41G5/24 , F41H5/266
摘要： Methods are disclosed for controlling a turret assembly with two or more gimbaled, swivel assembly sub-systems, such as a gimbaled gun and a gimbaled electro-optical sensor. The turret can be automatically slewed in response to one of the swivel assemblies rotating. A user can switch turret modes reflecting a priority between the gimbaled sub-systems system so that one takes priority over the other(s) during a mission.
摘要翻译： 公开了用于控制具有两个或更多个万向节，旋转组件子系统的转台组件的方法，例如万向炮和万向电光传感器。 响应于其中一个旋转组件旋转，转塔可以自动旋转。 用户可以在万用的子系统系统之间切换反映优先级的转塔模式，以便在任务期间优先于另一个子系统。
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6.发明申请TUNNELING FIELD EFFECT TRANSISTORS (TFETS) FOR CMOS ARCHITECTURES AND APPROACHES TO FABRICATING N-TYPE AND P-TYPE TFETS 有权用于CMOS结构的隧道场效应晶体管（TFET）和制造N型和P型TFETS的方法公开(公告)号：US20140138744A1
公开(公告)日：2014-05-22
申请号：US13678867
申请日：2012-11-16
申请人： Roza Kotlyar , Stephen M. Cea , Gilbert Dewey , Benjamin Chu-Kung , Uygar E. Avci , Rafael Rios , Anurag Chaudhry , Thomas D. Linton, JR. , Ian A. Young , Kelin J. Kuhn
发明人： Roza Kotlyar , Stephen M. Cea , Gilbert Dewey , Benjamin Chu-Kung , Uygar E. Avci , Rafael Rios , Anurag Chaudhry , Thomas D. Linton, JR. , Ian A. Young , Kelin J. Kuhn
IPC分类号： H01L29/78
CPC分类号： H01L29/66977 , H01L27/092 , H01L29/045 , H01L29/0676 , H01L29/068 , H01L29/1054 , H01L29/16 , H01L29/161 , H01L29/165 , H01L29/20 , H01L29/24 , H01L29/267 , H01L29/42392 , H01L29/7391 , H01L29/7842 , H01L29/785 , H01L29/78603 , H01L29/78642 , H01L29/78684 , H01L29/78696
摘要： Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion.
摘要翻译： 描述了用于CMOS架构的隧道场效应晶体管（TFET）和制造N型和P型TFET的方法。 例如，隧道场效应晶体管（TFET）包括设置在衬底上方的均质有源区。 同质结有源区包括其中具有未掺杂沟道区的松弛Ge或GeSn体。 同质结有源区还包括设置在放大的Ge或GeSn体中，在沟道区两侧的掺杂源极和漏极区。 TFET还包括设置在沟道区域之间的源极和漏极区域之间的栅极堆叠。 栅极堆叠包括栅极电介质部分和栅极电极部分。
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公开(公告)号：US06960517B2
公开(公告)日：2005-11-01
申请号：US10610835
申请日：2003-06-30
IPC分类号： H01L21/336 , H01L29/786 , H01L21/3205
CPC分类号： H01L29/7853 , H01L29/66795
摘要： A n-gate transistor, and method of forming such, including source/drain regions connected by a channel region and a gate electrode coupled to the channel region. The channel region has many angled edges protruding into the gate electrode. The many angled edges are to act as electrically conducting channel conduits between source/drain regions.
摘要翻译： 一种n型栅极晶体管及其形成方法，包括由沟道区域连接的源极/漏极区域和耦合到沟道区域的栅电极。 通道区域具有突出到栅电极中的许多成角度的边缘。 许多成角度的边缘用作在源极/漏极区域之间的导电沟道导管。
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公开(公告)号：US06396235B1
公开(公告)日：2002-05-28
申请号：US09755819
申请日：2001-01-05
申请人： Thomas W. Ellington , Bruce E. Exely , Jeffrey S. Folmer , William S. Lambros , Thomas D. Linton , John P. Buck, Jr. , Russell R. Moning , Peter M. Ellis , Kenneth A. Roseman , James R. Marshall
发明人： Thomas W. Ellington , Bruce E. Exely , Jeffrey S. Folmer , William S. Lambros , Thomas D. Linton , John P. Buck, Jr. , Russell R. Moning , Peter M. Ellis , Kenneth A. Roseman , James R. Marshall
IPC分类号： G01C1948
CPC分类号： F41G3/22 , Y10T74/1221
摘要： A two axis (azimuth and elevation) stabilized common gimbal (SGC) for use on a wide variety of commercial vehicles and military vehicles which are employed in combat situations capable of stabilizing a payload of primary sensors and of mounting a secondary sensor payload that is independent of the moving axes. The SCG employs three gyroscopes, inertial angular rate feedback for providing gimbal control of two axes during slewing and stabilization. In addition the third (roll) gyroscope is used for performing automatic calibration and decoupling procedures. In this regard, the SCG provides an interface for the primary suite of sensors comprising one or more sensors having a common line-of-sight (LOS) and which are stabilized by electronics, actuators, and inertial sensors against vehicle motion in both azimuth and elevation. Remote positioning of the LOS of sensors in the primary suite is also accomplished, with the SCG providing an inertial navigation system (INS) which provides navigation and which detects the LOS for the primary suite of sensors relative to the vehicle. The aforementioned stabilized gimbal employs unique features such as automotive gyro calibration and decoupling algorithm that increases the producibility of the system and the stabilized gimbal has the capability of being remotely controlled via its system serial link where commands may originate from devices such as radio links or target trackers.
摘要翻译： 用于多种商业车辆和军用车辆的双轴（方位和高程）稳定的通用万向架（SGC），用于能够稳定主传感器有效载荷并且安装独立的辅助传感器有效载荷的作战情况 的移动轴。 SCG采用三个陀螺仪，惯性角速率反馈，用于在回转和稳定期间提供两个轴的万向节控制。 此外，第三（滚动）陀螺仪用于执行自动校准和去耦程序。 在这方面，SCG为主要传感器套件提供了一个接口，该传感器包括一个或多个具有公共视距（LOS）的传感器，并且由电子，致动器和惯性传感器稳定，以便在方位角和 海拔。 传感器LOS在主套件中的远程定位也实现，SCG提供惯性导航系统（INS），其提供导航并且检测相对于车辆的主要传感器组的LOS。上述稳定的万向节应用 独特的功能，如汽车陀螺校准和解耦算法，提高系统的可靠性和稳定的万向节具有通过其系统串行链路进行远程控制的能力，其中命令可能来自诸如无线电链路或目标跟踪器的设备。
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公开(公告)号：US09074888B2
公开(公告)日：2015-07-07
申请号：US13752030
申请日：2013-01-28
申请人： Thomas D. Linton , Michael T. Fox , Bruce E. Exely
发明人： Thomas D. Linton , Michael T. Fox , Bruce E. Exely
CPC分类号： G01C19/04 , G01C19/00 , G01C25/005
摘要： Methods, devices, and systems are presented for compensating for gyroscopic drift in a stabilized gimbal system mounted on a vehicle. When the vehicle is parked and the gimbal is not being commanded to move by an operator, encoders or resolvers of the gimbal stabilized system are read and periodically read thereafter. When the vehicle begins to move or the gimbal is commanded to move, the last periodic reading of the resolvers is used to determine the amount that the gimbal has moved during the rest period. A gyroscopic drift rate is computed by dividing the amount of angular movement by the time period between the readings, and the gyroscopic drift rate is used for corrections while the vehicle is moving or gimbal is commanded to move. Each time the vehicle stops, the gyroscopic drift rate is re-computed and updated. The gyroscope can be heated until the drift rate is constant with respect to temperature, further helping the calibration.
摘要翻译： 提出了用于补偿安装在车辆上的稳定的万向节系统中的陀螺漂移的方法，装置和系统。 当车辆停放并且操作者未命令移动万向架时，读取万向节稳定系统的编码器或旋转变压器，并在此之后定期读取。 当车辆开始移动或者万向节被命令移动时，解析器的最后一次定期读数用于确定万向节在休息期间移动的量。 通过将角运动量除以读数之间的时间周期来计算陀螺仪漂移率，并且在车辆移动或者万向节命令移动时使用陀螺漂移速率进行校正。 每次停车时，重新计算和更新陀螺漂移率。 可以加热陀螺仪直到漂移速率相对于温度恒定，进一步有助于校准。
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10.发明授权Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs 有权用于CMOS方法的隧道场效应晶体管（TFET）用于制造N型和P型TFET公开(公告)号：US08890120B2
公开(公告)日：2014-11-18
申请号：US13678867
申请日：2012-11-16
申请人： Roza Kotlyar , Stephen M. Cea , Gilbert Dewey , Benjamin Chu-Kung , Uygar E. Avci , Rafael Rios , Anurag Chaudhry , Thomas D. Linton, Jr. , Ian A. Young , Kelin J. Kuhn
发明人： Roza Kotlyar , Stephen M. Cea , Gilbert Dewey , Benjamin Chu-Kung , Uygar E. Avci , Rafael Rios , Anurag Chaudhry , Thomas D. Linton, Jr. , Ian A. Young , Kelin J. Kuhn
CPC分类号： H01L29/66977 , H01L27/092 , H01L29/045 , H01L29/0676 , H01L29/068 , H01L29/1054 , H01L29/16 , H01L29/161 , H01L29/165 , H01L29/20 , H01L29/24 , H01L29/267 , H01L29/42392 , H01L29/7391 , H01L29/7842 , H01L29/785 , H01L29/78603 , H01L29/78642 , H01L29/78684 , H01L29/78696
摘要： Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion.
摘要翻译： 描述了用于CMOS架构的隧道场效应晶体管（TFET）和制造N型和P型TFET的方法。 例如，隧道场效应晶体管（TFET）包括设置在衬底上方的均质有源区。 同质结有源区包括其中具有未掺杂沟道区的松弛Ge或GeSn体。 同质结有源区还包括设置在放大的Ge或GeSn体中，在沟道区两侧的掺杂源极和漏极区。 TFET还包括设置在沟道区域之间的源极和漏极区域之间的栅极堆叠。 栅极堆叠包括栅极电介质部分和栅极电极部分。
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