公开(公告)号：US09583602B2

公开(公告)日：2017-02-28

申请号：US15209552

申请日：2016-07-13

申请人： Roza Kotlyar ,  Stephen M. Cea ,  Gilbert Dewey ,  Benjamin Chu-Kung ,  Uygar E. Avci ,  Rafael Rios ,  Anurag Chaudhry ,  Thomas D. Linton, Jr. ,  Ian A. Young ,  Kelin J. Kuhn

发明人： Roza Kotlyar ,  Stephen M. Cea ,  Gilbert Dewey ,  Benjamin Chu-Kung ,  Uygar E. Avci ,  Rafael Rios ,  Anurag Chaudhry ,  Thomas D. Linton, Jr. ,  Ian A. Young ,  Kelin J. Kuhn

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/739 ,  H01L29/16 ,  H01L29/161 ,  H01L29/06 ,  H01L29/24 ,  H01L29/267 ,  H01L27/092 ,  H01L29/04 ,  H01L29/10 ,  H01L29/165 ,  H01L29/20 ,  H01L29/423 ,  H01L29/786

CPC分类号： H01L29/66977 ,  H01L27/092 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267 ,  H01L29/42392 ,  H01L29/7391 ,  H01L29/7842 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78642 ,  H01L29/78684 ,  H01L29/78696

摘要： Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion.

摘要翻译： 描述了用于CMOS架构的隧道场效应晶体管（TFET）和制造N型和P型TFET的方法。 例如，隧道场效应晶体管（TFET）包括设置在衬底上方的均质有源区。 同质结有源区包括其中具有未掺杂沟道区的松弛Ge或GeSn体。 同质结有源区还包括设置在放大的Ge或GeSn体中，在沟道区两侧的掺杂源极和漏极区。 TFET还包括设置在沟道区域之间的源极和漏极区域之间的栅极堆叠。 栅极堆叠包括栅极电介质部分和栅极电极部分。

公开(公告)号：US20160322480A1

公开(公告)日：2016-11-03

申请号：US15209552

申请日：2016-07-13

申请人： Roza Kotlyar ,  Stephen M. Cea ,  Gilbert Dewey ,  Benjamin Chu-Kung ,  Uygar E. Avci ,  Rafael Rios ,  Anurag Chaudhry ,  Thomas D. Linton, JR. ,  Ian A. Young ,  Kelin J. Kuhn

发明人： Roza Kotlyar ,  Stephen M. Cea ,  Gilbert Dewey ,  Benjamin Chu-Kung ,  Uygar E. Avci ,  Rafael Rios ,  Anurag Chaudhry ,  Thomas D. Linton, JR. ,  Ian A. Young ,  Kelin J. Kuhn

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L29/165 ,  H01L27/092 ,  H01L29/161 ,  H01L29/10 ,  H01L29/20 ,  H01L29/04 ,  H01L29/786 ,  H01L29/423

CPC分类号： H01L29/66977 ,  H01L27/092 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267 ,  H01L29/42392 ,  H01L29/7391 ,  H01L29/7842 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78642 ,  H01L29/78684 ,  H01L29/78696

摘要： Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion.

公开(公告)号：US20150041847A1

公开(公告)日：2015-02-12

申请号：US14521200

申请日：2014-10-22

申请人： Roza Kotlyar ,  Stephen M. Cea ,  Gilbert Dewey ,  Benjamin Chu-Kung ,  Uygar E. Avci ,  Rafael Rios ,  Anurag Chaudhry ,  Thomas D. Linton, JR. ,  Ian A. Young ,  Kelin J. Kuhn

发明人： Roza Kotlyar ,  Stephen M. Cea ,  Gilbert Dewey ,  Benjamin Chu-Kung ,  Uygar E. Avci ,  Rafael Rios ,  Anurag Chaudhry ,  Thomas D. Linton, JR. ,  Ian A. Young ,  Kelin J. Kuhn

IPC分类号： H01L29/78 ,  H01L29/267 ,  H01L29/06 ,  H01L29/24 ,  H01L29/16

CPC分类号： H01L29/66977 ,  H01L27/092 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267 ,  H01L29/42392 ,  H01L29/7391 ,  H01L29/7842 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78642 ,  H01L29/78684 ,  H01L29/78696

摘要： Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion.

摘要翻译： 描述了用于CMOS架构的隧道场效应晶体管（TFET）和制造N型和P型TFET的方法。 例如，隧道场效应晶体管（TFET）包括设置在衬底上方的均质有源区。 同质结有源区包括其中具有未掺杂沟道区的松弛Ge或GeSn体。 同质结有源区还包括设置在放大的Ge或GeSn体中，在沟道区两侧的掺杂源极和漏极区。 TFET还包括设置在沟道区域之间的源极和漏极区域之间的栅极堆叠。 栅极堆叠包括栅极电介质部分和栅极电极部分。

公开(公告)号：US20140138744A1

公开(公告)日：2014-05-22

申请号：US13678867

申请日：2012-11-16

申请人： Roza Kotlyar ,  Stephen M. Cea ,  Gilbert Dewey ,  Benjamin Chu-Kung ,  Uygar E. Avci ,  Rafael Rios ,  Anurag Chaudhry ,  Thomas D. Linton, JR. ,  Ian A. Young ,  Kelin J. Kuhn

发明人： Roza Kotlyar ,  Stephen M. Cea ,  Gilbert Dewey ,  Benjamin Chu-Kung ,  Uygar E. Avci ,  Rafael Rios ,  Anurag Chaudhry ,  Thomas D. Linton, JR. ,  Ian A. Young ,  Kelin J. Kuhn

IPC分类号： H01L29/78

CPC分类号： H01L29/66977 ,  H01L27/092 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267 ,  H01L29/42392 ,  H01L29/7391 ,  H01L29/7842 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78642 ,  H01L29/78684 ,  H01L29/78696

摘要： Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion.

摘要翻译： 描述了用于CMOS架构的隧道场效应晶体管（TFET）和制造N型和P型TFET的方法。 例如，隧道场效应晶体管（TFET）包括设置在衬底上方的均质有源区。 同质结有源区包括其中具有未掺杂沟道区的松弛Ge或GeSn体。 同质结有源区还包括设置在放大的Ge或GeSn体中，在沟道区两侧的掺杂源极和漏极区。 TFET还包括设置在沟道区域之间的源极和漏极区域之间的栅极堆叠。 栅极堆叠包括栅极电介质部分和栅极电极部分。

公开(公告)号：US06960517B2

公开(公告)日：2005-11-01

申请号：US10610835

申请日：2003-06-30

申请人： Rafael Rios ,  Brian S. Doyle ,  Thomas D. Linton, Jr. ,  Jack Kavalieros

发明人： Rafael Rios ,  Brian S. Doyle ,  Thomas D. Linton, Jr. ,  Jack Kavalieros

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/3205

CPC分类号： H01L29/7853 ,  H01L29/66795

摘要： A n-gate transistor, and method of forming such, including source/drain regions connected by a channel region and a gate electrode coupled to the channel region. The channel region has many angled edges protruding into the gate electrode. The many angled edges are to act as electrically conducting channel conduits between source/drain regions.

摘要翻译： 一种n型栅极晶体管及其形成方法，包括由沟道区域连接的源极/漏极区域和耦合到沟道区域的栅电极。 通道区域具有突出到栅电极中的许多成角度的边缘。 许多成角度的边缘用作在源极/漏极区域之间的导电沟道导管。

公开(公告)号：US08890120B2

公开(公告)日：2014-11-18

申请号：US13678867

申请日：2012-11-16

申请人： Roza Kotlyar ,  Stephen M. Cea ,  Gilbert Dewey ,  Benjamin Chu-Kung ,  Uygar E. Avci ,  Rafael Rios ,  Anurag Chaudhry ,  Thomas D. Linton, Jr. ,  Ian A. Young ,  Kelin J. Kuhn

发明人： Roza Kotlyar ,  Stephen M. Cea ,  Gilbert Dewey ,  Benjamin Chu-Kung ,  Uygar E. Avci ,  Rafael Rios ,  Anurag Chaudhry ,  Thomas D. Linton, Jr. ,  Ian A. Young ,  Kelin J. Kuhn

IPC分类号： H01L29/06 ,  H01L29/78

CPC分类号： H01L29/66977 ,  H01L27/092 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267 ,  H01L29/42392 ,  H01L29/7391 ,  H01L29/7842 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78642 ,  H01L29/78684 ,  H01L29/78696

摘要： Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion.

摘要翻译： 描述了用于CMOS架构的隧道场效应晶体管（TFET）和制造N型和P型TFET的方法。 例如，隧道场效应晶体管（TFET）包括设置在衬底上方的均质有源区。 同质结有源区包括其中具有未掺杂沟道区的松弛Ge或GeSn体。 同质结有源区还包括设置在放大的Ge或GeSn体中，在沟道区两侧的掺杂源极和漏极区。 TFET还包括设置在沟道区域之间的源极和漏极区域之间的栅极堆叠。 栅极堆叠包括栅极电介质部分和栅极电极部分。