摘要:
A manufacturing method for a semiconductor device embedded substrate, includes: a first step of preparing a semiconductor device having a first insulating layer; a second step of preparing a support body, and arranging the semiconductor device on one surface of the support body; a third step of forming a second insulating layer on the one surface of the support body; a fourth step of removing the support body; a fifth step of forming a first wiring pattern on a surface of each of the first insulating layer and the second insulating layer; a sixth step of forming a via-hole from which the first wiring pattern is exposed on the second insulating layer; and a seventh step of forming a second wiring pattern electrically connected on a surface of the second insulating layer.
摘要:
A method of manufacturing a wiring board including an insulating layer where a semiconductor chip is embedded includes: forming, on a supporting board, the insulating layer where the semiconductor chip is embedded and a wiring connected to the semiconductor chip; removing the supporting board by etching; and simultaneously forming first and second reinforcing layers so as to sandwich the insulating layer after removing the supporting board.
摘要:
A semiconductor chip is characterized by a structure including a semiconductor chip on which electrode pads are formed, bumps which are formed on the respective electrode pads and which have projection sections, an insulating layer formed on the semiconductor chip, and a conductive pattern to be connected to the bumps, wherein extremities of the projection sections are inserted into the conductive pattern and the inserted extremities are flattened.
摘要:
A disclosed substrate is composed of a base member having a through-hole, a penetrating via provided in the through-hole, and a wiring connected to the penetrating via. The penetrating via includes a penetrating part having two ends on both sides of the base member, which is provided in the through-hole, a first protrusion protruding from the base member, which is formed on a first end of the penetrating part so as to be connected to the wiring, and a second protrusion protruding from the base member, which is formed on a second end of the penetrating part. The first protrusion and second protrusion are wider than a diameter of the through-hole.
摘要:
It is a semiconductor device that has a semiconductor chip on which an electrode pad is formed, an electric connection member formed on the electrode pad, an insulating layer formed on the semiconductor chip, and an electrically conductive pattern connected to the electric connection member. An opening portion corresponding to the electric connection member is formed in the conductive pattern. The conductive pattern is electrically connected to the electric connection member by an electrically conducting paste embedded in the opening portion.
摘要:
A wiring board includes an external connection terminal of a cylindrical shape, in which an electrode terminal of the electronic component to be mounted is fitted. In one configuration, a portion of the external connection terminal is electrically connected to a pad portion formed on an electronic component mounting surface side of the wiring board, and the external connection terminal is curvedly formed in such a shape that the outer periphery of the electrode terminal comes into close contact with the inner periphery of the middle portion of the external connection terminal when the electrode terminal is inserted into the external connection terminal.
摘要:
A method for manufacturing a semiconductor device has preparation step of preparing a semiconductor substrate having a plurality of semiconductor chip formation regions and a scribe region arranged between the plurality of the semiconductor chip formation regions and including a substrate cutting position, a semiconductor chip formation step of forming semiconductor chips having electrode pads on the plurality of semiconductor chip formation regions, a first insulation layer formation step of forming a first insulation layer on the semiconductor chips and the scribe region of the semiconductor substrate, a second insulation layer formation step of forming a second insulation layer on the first insulation layer except for a region corresponding to the substrate cutting position, and a cutting step of cutting the semiconductor substrate at the substrate cutting position.
摘要:
A manufacturing method of a chip integrated substrate is disclosed. The manufacturing method includes a first step that forms a wiring structure to be connected to a semiconductor chip on a first core substrate; a second step that disposes the semiconductor chip on a second core substrate; and a third step that bonds the first core substrate on which the wiring structure is formed to the second core substrate on which the semiconductor chip is disposed. In addition, the manufacturing method includes a step that removes the first core substrate after the third step and a step that removes the second core substrate after the third step.
摘要:
The present disclosure relates to a method of manufacturing an electronic device in which a plurality of first bumps serving as external connection terminals are formed on a conductive pattern. The method includes: (a) forming a second bump having a projection portion on an electrode pad formed on a substrate; (b) forming an insulating layer on the substrate; (c) exposing a portion of the projection portion from an upper surface of the insulating layer; (d) forming a flat stress absorbing layer in a bump providing area, in which the first bumps are provided, on the insulating layer; (e) forming a first conductive layer on the insulating layer and the stress absorbing layer and the exposed portion of the projection portion; (f) forming a second conductive layer by an electroplating using the first conductive layer as a power feeding layer; (g) forming the conductive pattern by patterning the second conductive layer; and (h) forming the first bumps on the conductive pattern formed on the stress absorbing layer.
摘要:
There are provided the steps of forming a bump 104 having a protruded portion 104B on an electrode pad 103 formed on a substrate 101A, forming an insulating layer 105 on the substrate 101A and exposing a part of the protruded portion 104B to an upper surface of the insulating layer 105, forming a first conductive pattern 107 by using a depositing process in the upper surface of the insulating layer 105 and an exposed part of the protruded portion 104B, carrying out electrolytic plating by using the first conductive pattern 107 as a feeding layer, thereby forming a second conductive pattern 108, and patterning the second conductive pattern 108 to form a conductive pattern 106 connected to the bump 104.