公开(公告)号：US20110072424A1

公开(公告)日：2011-03-24

申请号：US12673684

申请日：2008-08-13

申请人： Jong Uk Choi ,  Dongha Shin ,  Sung Wook Jung ,  Jiyeon Kim ,  Muhammad Ali Malik

发明人： Jong Uk Choi ,  Dongha Shin ,  Sung Wook Jung ,  Jiyeon Kim ,  Muhammad Ali Malik

IPC分类号： G06F9/445 ,  G06F9/455

CPC分类号： G06F9/45537 ,  G06F8/61

摘要： A virtual application creating system, a virtual application installing method, a native API calling method and a virtual application executing method are disclosed. The virtual application creating system comprises a virtual environment library block including a plurality of modules that process native application program interfaces (APIs) of an operating system such that the native application APIs are suited to a virtual environment, finding a module capable of processing a specific native API from the plurality of modules when the specific native API is called and operating the found module; a virtual application installation block receiving position information of an application to be virtualized and information on an installation place where the application will be virtualized and installed from a user and inserting the virtual environment library block into a memory to install a virtual application in the installation place; and a virtual application execution block executing the virtual application installed in the installation place. Accordingly, an application selected by a user can be virtualized and installed in a position designated by the user, for example, an external storage unit, and the installed virtual application can be executed in a virtual environment independent from a host.

摘要翻译： 公开了虚拟应用创建系统，虚拟应用安装方法，本地API调用方法和虚拟应用执行方法。 虚拟应用创建系统包括虚拟环境库块，其包括处理操作系统的本机应用程序接口（API）的多个模块，使得本机应用API适合于虚拟环境，找到能够处理特定 当调用特定本机API并操作找到的模块时，来自多个模块的本地API; 虚拟应用程序安装块，用于接收要虚拟化的应用程序的位置信息，以及关于应用程序将从用户虚拟化并安装的安装位置的信息，并将虚拟环境库块插入到存储器中以将虚拟应用程序安装在安装地点 ; 以及执行安装在安装地点的虚拟应用的虚拟应用执行块。 因此，可以将由用户选择的应用程序虚拟化并安装在由用户指定的位置，例如外部存储单元中，并且可以在独立于主机的虚拟环境中执行安装的虚拟应用程序。

公开(公告)号：US07550823B2

公开(公告)日：2009-06-23

申请号：US11777657

申请日：2007-07-13

申请人： Byoung Deog Choi ,  Jun Sin Yi ,  Sung Wook Jung ,  Sung Hyung Hwang

发明人： Byoung Deog Choi ,  Jun Sin Yi ,  Sung Wook Jung ,  Sung Hyung Hwang

IPC分类号： H01L23/58 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/04 ,  H01L29/06 ,  H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/28273 ,  B82Y10/00 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/12 ,  H01L29/04 ,  H01L29/1037 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/66825 ,  H01L29/7881 ,  Y10S977/72 ,  Y10S977/721 ,  Y10S977/723 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/784 ,  Y10S977/785

摘要： A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.

摘要翻译： 非易失性存储单元能够通过使用一氧化二氮等离子体形成包含氧氮化硅（SiO x N y）层的第一氧化物膜，并且通过形成多晶硅的粗糙表面而能够减少由于多晶硅的粗糙表面而导致的过大的电流泄漏，甚至在低温工艺 通过离子注入法在氮化物膜上注入硅纳米晶体的氮化物膜中的多个硅纳米晶体及其制造方法和包括非易失性存储单元的存储装置。

公开(公告)号：US07402037B2

公开(公告)日：2008-07-22

申请号：US11512373

申请日：2006-08-30

申请人： Sung-wook Jung ,  Sung-chul Shin ,  Young-ju Kang ,  Byeong-geun Jang ,  Jin-young Kim

发明人： Sung-wook Jung ,  Sung-chul Shin ,  Young-ju Kang ,  Byeong-geun Jang ,  Jin-young Kim

IPC分类号： B29C45/64

CPC分类号： B29C45/68

摘要： The mold clamping unit comprises a column mounted in a transfer means and moving in forward and backward direction; a mold clamping piston in which clamping operation and clamping-releasing operation are performed; plurality of column teeth disposed on a surface of the column along an axial direction of the column; center bore provided in a central of the mold clamping piston; clamping tooth seating groove with a plurality of clamping teeth inside the mold clamping piston contacting the center bore; rotating plate with plurality of clamping tooth guide grooves separated from the clamping teeth in the axial direction of the column; and a teeth rod positioned in each of the clamping tooth guide groove, wherein each teeth rod is connected to each clamping teeth during the rotation of the rotating plate, for moving each clamping tooth in a central or radial direction of the rotating plate and clamping of the clamping tooth and the column can proceed.

摘要翻译： 模具夹紧单元包括安装在传送装置中并沿前后方向移动的柱体; 夹持操作和夹紧释放操作的模具夹紧活塞; 沿列的轴向设置在柱的表面上的多个列齿; 中心孔设置在模具夹紧活塞的中心; 夹紧齿座槽与模具夹紧活塞内的多个夹紧齿接触中心孔; 旋转板，其具有沿着柱的轴向与夹持齿分离的多个夹紧齿导向槽; 以及定位在每个夹紧齿导向槽中的齿杆，其中每个齿杆在旋转板的旋转期间连接到每个夹紧齿，用于沿旋转板的中心或径向方向移动每个夹紧齿，并夹紧 夹紧齿和柱可以进行。

公开(公告)号：US20080121887A1

公开(公告)日：2008-05-29

申请号：US11777637

申请日：2007-07-13

申请人： Byoung Deog Choi ,  Jun Sin Yi ,  Sung Wook Jung ,  Sung Hyung Hwang

发明人： Byoung Deog Choi ,  Jun Sin Yi ,  Sung Wook Jung ,  Sung Hyung Hwang

IPC分类号： H01L29/06 ,  H01L21/3205

CPC分类号： H01L29/7881 ,  B82Y10/00 ,  H01L21/28273 ,  H01L27/12 ,  H01L29/04 ,  H01L29/1037 ,  H01L29/42332 ,  H01L29/513

摘要： A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.

摘要翻译： 非易失性存储器件能够减少由多晶硅的粗糙表面引起的过大的漏电流，并且通过形成包括氮氧化硅（SiO 2）的第一氧化物膜，实现改进的阻挡功能， 使用一氧化二氮（N 2 O 3）等离子体，并且通过形成富硅的氮化硅膜，以及其制造方法和包括非氧化氮（N 2 O 3） 易失存储器件。 此外，可以在不使用高温处理的情况下在玻璃基板上制造非易失性存储器件。

公开(公告)号：US07140384B2

公开(公告)日：2006-11-28

申请号：US10869968

申请日：2004-06-18

申请人： Sung-Ho Kang ,  Seog-Min Lee ,  Sung-Wook Jung ,  Yong-Suk Kim

发明人： Sung-Ho Kang ,  Seog-Min Lee ,  Sung-Wook Jung ,  Yong-Suk Kim

IPC分类号： G05D7/06

CPC分类号： G05D7/0652 ,  G01F1/6847 ,  G01F15/005 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/87314 ,  Y10T137/87362 ,  Y10T137/88062

摘要： A mass flow controller includes a base having a first passage, an inlet portion for introducing fluid into the first passage, an outlet portion for releasing the fluid from the first passage, and a second passage branched from a first upstream portion of the first passage and connected to a second downstream portion of the first passage A mass flow sensor is connected to the first passage between the inlet portion of the base and the first portion of the first passage; A first valve is disposed in-line with the first passage between the first and second portions. The first valve controls the mass flow of the fluid passing through the first passage;. A second valve is disposed in-line with the second passage to opens/close the second passage. A valve controller compares the mass flow measured by the mass flow sensor to a standard flow, and then positions the first valve such that the measured mass flow corresponds to the standard flow.

摘要翻译： 质量流量控制器包括具有第一通道的基座，用于将流体引入第一通道的入口部分，用于从第一通道释放流体的出口部分和从第一通道的第一上游部分分支的第二通道， 连接到第一通道A的第二下游部分质量流量传感器连接到基座的入口部分和第一通道的第一部分之间的第一通道; 第一阀与第一和第二部分之间的第一通道成一直线设置。 第一阀控制通过第一通道的流体的质量流量。 第二阀与第二通道成一直线设置以打开/关闭第二通道。 阀门控制器将由质量流量传感器测量的质量流量与标准流量进行比较，然后将第一阀门定位，使得测得的质量流量对应于标准流量。

公开(公告)号：US08872249B2

公开(公告)日：2014-10-28

申请号：US13604316

申请日：2012-09-05

申请人： Sung-Wook Jung

发明人： Sung-Wook Jung

IPC分类号： H01L23/532

CPC分类号： H01L27/11582

摘要： The technology of the present invention relates to a non-volatile memory device and a fabrication method thereof. The non-volatile memory device includes channel layers protruding vertically from a substrate, a plurality of hole-supply layers and a plurality of gate electrodes, which are alternately stacked along the channel layers, and a memory film interposed between the channel layers and the gate electrodes and between the hole-supply layers and the gate electrodes. According to this technology, the hole-supply layers are formed between the memory cells such that sufficient holes are supplied to the memory cells during the erase operation of the memory cells, whereby the erase operation of the memory cells is smoothly performed without using the GIDL current, and the properties of the device are protected from being deteriorated due to program/erase cycling.

摘要翻译： 本发明的技术涉及一种非易失性存储器件及其制造方法。 非易失性存储器件包括从衬底垂直突出的沟道层，沿着沟道层交替层叠的多个空穴供给层和多个栅电极，以及介于沟道层和栅极之间的存储膜 电极之间并且在空穴供给层和栅电极之间。 根据该技术，在存储单元的擦除操作期间，在存储单元之间形成空穴供给层，使得在存储单元的擦除操作期间向存储单元提供足够的空穴，从而在不使用GIDL的情况下平滑地执行存储单元的擦除操作 电流，并且由于编程/擦除循环，器件的特性被保护免于恶化。

公开(公告)号：US20100148155A1

公开(公告)日：2010-06-17

申请号：US12388829

申请日：2009-02-19

申请人： Byoung deog CHOI ,  Jun sin Yi ,  Sung wook Jung ,  Kyung soo Jang ,  Jae hyun Cho

发明人： Byoung deog CHOI ,  Jun sin Yi ,  Sung wook Jung ,  Kyung soo Jang ,  Jae hyun Cho

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L51/52

CPC分类号： H01L29/78606 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66757

摘要： A thin film transistor (TFT), a method of forming the same and a flat panel display device having the same are disclosed. The TFT includes a buffer layer and a semiconductor layer which are sequentially disposed on a substrate, a gate pattern including an insulating pattern and a gate electrode pattern which are sequentially disposed on the semiconductor layer, source and drain regions defining a portion of the semiconductor layer below the gate pattern as a channel area, formed by doping the semiconductor layer disposed at both sides of the gate pattern with impurities, and extending from both sides of the channel area, a passivation layer which covers the entire surface of the substrate having the gate pattern, a first metal electrode which penetrates a portion of the passivation layer disposed on the source area and a portion of the source region below the portion of the passivation layer to be electrically connected with the source region, and a second metal electrode which penetrates a portion of the passivation layer disposed on the drain area and a portion of the drain region below the portion of the passivation layer to be electrically connected with the drain region. According to the present invention, a metal is infiltrated into source and drain regions to disperse an electric current when a TFT operates, and thus charge mobility is improved, and damage of a drain region caused by the excessive current density is prevented, leading to the long lifespan and excellent performance.

摘要翻译： 公开了薄膜晶体管（TFT），其形成方法和具有该薄膜晶体管的平板显示装置。 TFT包括顺序地设置在基板上的缓冲层和半导体层，依次设置在半导体层上的绝缘图案和栅极电极图案的栅极图案，限定半导体层的一部分的源极和漏极区域 在作为沟道区域的栅极图案之下，通过用杂质掺杂设置在栅极图案的两侧的半导体层并从沟道区域的两侧延伸形成的钝化层，该钝化层覆盖具有栅极的基板的整个表面 图案，穿过设置在源极区上的钝化层的一部分的第一金属电极和钝化层的与源极区域电连接的部分下方的源极区的一部分，以及穿透源极区的第二金属电极 设置在漏极区域上的钝化层的一部分和位于t的部分下方的漏极区域的一部分 他的钝化层与漏极区电连接。 根据本发明，当TFT工作时，金属渗透到源区和漏区以分散电流，因此电荷迁移率得到改善，并且防止了由过大的电流密度引起的漏极区的损坏，从而导致 使用寿命长，性能优良。

公开(公告)号：US07719047B2

公开(公告)日：2010-05-18

申请号：US11777637

申请日：2007-07-13

申请人： Byoung Deog Choi ,  Jun Sin Yi ,  Sung Wook Jung ,  Sung Hyung Hwang

发明人： Byoung Deog Choi ,  Jun Sin Yi ,  Sung Wook Jung ,  Sung Hyung Hwang

IPC分类号： H01L29/06

CPC分类号： H01L29/7881 ,  B82Y10/00 ,  H01L21/28273 ,  H01L27/12 ,  H01L29/04 ,  H01L29/1037 ,  H01L29/42332 ,  H01L29/513

摘要： A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.

摘要翻译： 非易失性存储器件能够通过使用一氧化二氮（N 2 O）形成包括氮氧化硅（SiO x N y）层的第一氧化物膜，从而减少由于多晶硅的粗糙表面引起的过大的漏电流，并且实现改进的阻挡功能， 等离子体，并且通过形成富硅的氮化硅膜及其制造方法和包括非易失性存储器件的存储装置。 此外，可以在不使用高温处理的情况下在玻璃基板上制造非易失性存储器件。

公开(公告)号：US20050030468A1

公开(公告)日：2005-02-10

申请号：US10940088

申请日：2004-09-14

申请人： Sung-Wook Jung ,  Sang-Jun Lee ,  Woo-Shik Lee ,  Yong-Joon Kwon

发明人： Sung-Wook Jung ,  Sang-Jun Lee ,  Woo-Shik Lee ,  Yong-Joon Kwon

IPC分类号： G02F1/1339 ,  G02F1/1345 ,  G02F1/1362 ,  G09F9/30 ,  G09F9/35

CPC分类号： G02F1/13458 ,  G02F1/1339 ,  G02F1/1345

摘要： A liquid crystal device includes panels disposed opposite each other along a major surface, a liquid crystal layer interposed between the panels, a sealant disposed between the panels for confining the liquid crystal layer, a display area defined within the liquid crystal layer, a fan out area adjacent to the display area, and signal lines overlapped by the sealant in the fan out area where the distance between adjacent signal lines is one to ten times as large as the width of the signal lines; and a corresponding method for curing a liquid crystal device includes supporting the liquid crystal device, emitting light for curing the sealant, and redirecting the emitted light towards at least one surface of the liquid crystal device.

摘要翻译： 液晶装置包括沿主表面彼此相对布置的面板，插入在面板之间的液晶层，设置在面板之间用于限制液晶层的密封剂，限定在液晶层内的显示区域，扇出口 并且在相邻信号线之间的距离是信号线的宽度的一至十倍的风​​扇输出区域中与密封剂重叠的信号线; 并且相应的液晶装置的固化方法包括：支撑液晶装置，发出用于固化密封剂的光，并将发射的光重定向到液晶装置的至少一个表面。

公开(公告)号：US5884491A

公开(公告)日：1999-03-23

申请号：US970386

申请日：1997-11-14

申请人： Jie-kwan Kim ,  Sung-wook Jung ,  Jung-yong Lee

发明人： Jie-kwan Kim ,  Sung-wook Jung ,  Jung-yong Lee

IPC分类号： F25D17/08 ,  F24F11/00 ,  F24F13/075 ,  F25D11/02 ,  F25D17/04 ,  F25D17/06 ,  F25D29/00 ,  F24F7/00

CPC分类号： F24F11/0078 ,  F24F13/075 ,  F25D17/045 ,  F25D17/065 ,  F25D2317/0653 ,  F25D2317/0672 ,  F25D2400/04 ,  F25D2500/04 ,  F25D2700/06 ,  F25D2700/123 ,  F25D29/00

摘要： A temperature controlling apparatus adopting a fuzzy adaptation model and a method using the same are provided, in which temperatures of a plurality of positions of a refrigeration compartment are estimated in order to rapidly reach temperature equilibrium of the refrigeration compartment, by considering the operation states of a compressor and a cooling fan which directly affect the temperature of the refrigeration compartment. The temperature controlling apparatus adopting the fuzzy inference includes: a cool air discharge direction controller for controlling the rotation angle of a cool air discharge control blade; and a fuzzy inference unit for inferring peripheral temperatures of temperature sensors by taking the operational states of the cooling fan and the compressor as inputs, in order to provide the cool air discharge direction controller with information with respect to the static angle of the blades of the cool air discharge control blade.

摘要翻译： 提供一种采用模糊适应模型的温度控制装置及其使用方法，其中，为了快速达到冷藏室的温度平衡，估计冷藏室的多个位置的温度，考虑到冷冻室的运行状态 直接影响冷藏室温度的压缩机和冷却风扇。 采用模糊推理的温度控制装置包括：冷空气排放方向控制器，用于控制冷气排放控制叶片的旋转角度; 以及用于通过将冷却风扇和压缩机的操作状态作为输入来推断温度传感器的周围温度的模糊推理单元，以便为冷空气排出方向控制器提供关于叶片的静态角度的信息 冷排气控制叶片。