公开(公告)号：US10002875B2

公开(公告)日：2018-06-19

申请号：US15466111

申请日：2017-03-22

申请人： Phil Ouk Nam ,  Hyung Joon Kim ,  Sung Gil Kim ,  Ji Hoon Choi ,  Seulye Kim ,  Hong Suk Kim ,  Jae Young Ahn

发明人： Phil Ouk Nam ,  Hyung Joon Kim ,  Sung Gil Kim ,  Ji Hoon Choi ,  Seulye Kim ,  Hong Suk Kim ,  Jae Young Ahn

IPC分类号： H01L29/49 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/40 ,  H01L29/06

CPC分类号： H01L29/0653 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/402 ,  H01L29/408

摘要： A semiconductor device may include gate electrodes and interlayer insulating layers alternately stacked on a substrate, a channel layer penetrating the gate electrodes and the interlayer insulating layers, a gate dielectric layer between the gate electrodes and the channel layer, a filling insulation that fills at least a portion of an interior of the channel layer, a charge fixing layer between the channel layer and the filling insulation and including a high-k material and/or a metal, and a conductive pad connected to the channel layer and on the filling insulation. The conductive pad may be physically separated from the charge fixing layer.

公开(公告)号：US20180026046A1

公开(公告)日：2018-01-25

申请号：US15375944

申请日：2016-12-12

申请人： Phil Ouk NAM ,  Sung Gil KIM ,  Seulye KIM ,  Hong Suk KIM ,  Jae Young AHN ,  Ji Hoon CHOI

发明人： Phil Ouk NAM ,  Sung Gil KIM ,  Seulye KIM ,  Hong Suk KIM ,  Jae Young AHN ,  Ji Hoon CHOI

IPC分类号： H01L27/11582 ,  H01L29/423 ,  H01L27/11565 ,  H01L27/11519 ,  H01L27/11556

CPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L29/42324 ,  H01L29/4234

摘要： In one embodiment, the semiconductor device includes a stack of alternating first interlayer insulating layers and gate electrode layers on a substrate. At least one of the gate electrode layers has a first portion and a second portion. The second portion forms an end portion of the at least one gate electrode layer, and a bottom surface of the second portion is at a lower level than a bottom surface of the first portion. A contact plug extends from the second portion.

公开(公告)号：US20180122907A1

公开(公告)日：2018-05-03

申请号：US15646184

申请日：2017-07-11

申请人： Ji-hoon CHOI ,  Hong-suk KIM ,  Sung-gil KIM ,  Phil-ouk NAM ,  Seul-ye KIM ,  Han-jin LIM ,  Jae-young AHN

发明人： Ji-hoon CHOI ,  Hong-suk KIM ,  Sung-gil KIM ,  Phil-ouk NAM ,  Seul-ye KIM ,  Han-jin LIM ,  Jae-young AHN

IPC分类号： H01L29/10 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

CPC分类号： H01L29/1037 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： A semiconductor device includes a substrate, a plurality of gate electrodes extending in a first direction parallel to an upper surface of a substrate on the substrate, and alternately arranged with an interlayer insulating layer in a second direction perpendicular to the upper surface of the substrate, a vertical channel layer on a sidewall of a vertical channel hole extending in the second direction by penetrating through the plurality of gate electrodes and the interlayer insulating layer, and connected to the upper surface of the substrate, and a first gap-fill insulating layer formed in the vertical channel hole and including an outer wall contacting the vertical channel layer and an inner wall opposite the outer wall, wherein a part of the inner wall forms a striation extending in the second direction.

公开(公告)号：US09953999B2

公开(公告)日：2018-04-24

申请号：US15375944

申请日：2016-12-12

申请人： Phil Ouk Nam ,  Sung Gil Kim ,  Seulye Kim ,  Hong Suk Kim ,  Jae Young Ahn ,  Ji Hoon Choi

发明人： Phil Ouk Nam ,  Sung Gil Kim ,  Seulye Kim ,  Hong Suk Kim ,  Jae Young Ahn ,  Ji Hoon Choi

IPC分类号： H01L29/76 ,  H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L29/423

CPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L29/42324 ,  H01L29/4234

摘要： In one embodiment, the semiconductor device includes a stack of alternating first interlayer insulating layers and gate electrode layers on a substrate. At least one of the gate electrode layers has a first portion and a second portion. The second portion forms an end portion of the at least one gate electrode layer, and a bottom surface of the second portion is at a lower level than a bottom surface of the first portion. A contact plug extends from the second portion.

公开(公告)号：US20060090851A1

公开(公告)日：2006-05-04

申请号：US11253779

申请日：2005-10-18

申请人： Sung-Ho Kang ,  Sung-Gil Kim ,  Byung-Hyung Kim ,  Young-dong Seo ,  Sang-Cheol Ha

发明人： Sung-Ho Kang ,  Sung-Gil Kim ,  Byung-Hyung Kim ,  Young-dong Seo ,  Sang-Cheol Ha

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01L21/67109 ,  H01L21/67069

摘要： There is provided a diffuser for implementing a diffusing process in an equipment for manufacturing semiconductor devices to increase or maximize its productivity. The diffuser comprises a reaction pipe; a plate joined to the underside of the reaction pipe for sealing the reaction pipe and defining a work space therewithin. A plurality of wafers are disposed within the work space. A gas injection tube is provided for supplying a reactive gas to the work space. A plurality of plasma electrodes are disposed adjacent to the gas injection tube for applying high frequency power to a reactive gas to induce a plasma reaction. A protection member is adapted to cover a portion of the plasma electrodes inserted into the reaction tube located under the plurality of wafers, for preventing a substantial amount of polymer from being formed under the reactive tube due to a plasma reaction in the reactive gases

摘要翻译： 提供了用于在用于制造半导体器件的设备中实现漫射工艺以扩大或最大化其生产率的漫射器。 扩散器包括反应管; 连接到反应管的下侧的板，用于密封反应管并在其中限定工作空间。 多个晶片设置在工作空间内。 提供一种气体注入管，用于向工作空间提供反应气体。 多个等离子体电极邻近气体注入管设置，用于向反应气体施加高频功率以引起等离子体反应。 保护构件适于覆盖插入位于多个晶片下方的反应管中的等离子体电极的一部分，以防止由于反应气体中的等离子体反应而在反应管之下形成大量的聚合物

公开(公告)号：US10340284B2

公开(公告)日：2019-07-02

申请号：US15871059

申请日：2018-01-14

申请人： Sung Gil Kim ,  Seul Ye Kim ,  Hong Suk Kim ,  Jin Tae Noh ,  Ji Hoon Choi ,  Jae Young Ahn

发明人： Sung Gil Kim ,  Seul Ye Kim ,  Hong Suk Kim ,  Jin Tae Noh ,  Ji Hoon Choi ,  Jae Young Ahn

IPC分类号： H01L27/115 ,  H01L27/11582 ,  H01L23/532 ,  H01L27/108 ,  H01L23/00 ,  H01L29/06 ,  H01L25/065

摘要： A stack structure includes conductive layer patterns and interlayer insulating layer patterns alternately stacked on one another. A channel hole penetrates the stack structure. A dielectric layer is disposed on a sidewall of the channel hole. A channel layer is disposed on the dielectric layer and in the channel hole. A passivation layer is disposed on the channel layer and in the channel hole. The channel layer is interposed between the passivation layer and the dielectric layer. An air gap is surrounded by the passivation layer. A width of the air gap is larger than a width of the passivation layer.

公开(公告)号：US20180053775A1

公开(公告)日：2018-02-22

申请号：US15466111

申请日：2017-03-22

申请人： Phil Ouk Nam ,  Hyung Joon Kim ,  Sung Gil Kim ,  Ji Hoon Choi ,  Seulye Kim ,  Hong Suk Kim ,  Jae Young Ahn

发明人： Phil Ouk Nam ,  Hyung Joon Kim ,  Sung Gil Kim ,  Ji Hoon Choi ,  Seulye Kim ,  Hong Suk Kim ,  Jae Young Ahn

IPC分类号： H01L27/11556 ,  H01L27/11582 ,  H01L29/40 ,  H01L29/06

CPC分类号： H01L29/0653 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/402 ,  H01L29/408

摘要： A semiconductor device may include gate electrodes and interlayer insulating layers alternately stacked on a substrate, a channel layer penetrating the gate electrodes and the interlayer insulating layers, a gate dielectric layer between the gate electrodes and the channel layer, a filling insulation that fills at least a portion of an interior of the channel layer, a charge fixing layer between the channel layer and the filling insulation and including a high-k material and/or a metal, and a conductive pad connected to the channel layer and on the filling insulation. The conductive pad may be physically separated from the charge fixing layer.

公开(公告)号：US20110049596A1

公开(公告)日：2011-03-03

申请号：US12728396

申请日：2010-03-22

申请人： Dong-kak Lee ,  Sung-gil Kim ,  Soo-jin Hong ,  Sun-ghil Lee ,  Deok-hyung Lee

发明人： Dong-kak Lee ,  Sung-gil Kim ,  Soo-jin Hong ,  Sun-ghil Lee ,  Deok-hyung Lee

IPC分类号： H01L27/108 ,  H01L23/48 ,  H01L29/78

CPC分类号： H01L21/76843 ,  H01L21/28525 ,  H01L21/76847 ,  H01L21/76877 ,  H01L23/485 ,  H01L27/10855 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are semiconductor devices including a semiconductor substrate, an insulating layer including a contact hole through which the semiconductor substrate is exposed, and a polysilicon layer filling the contact hole. The polysilicon layer is doped with impurities and includes an impurity-diffusion prevention layer. In the semiconductor devices, the impurities included in the polysilicon layer do not diffuse into the insulating layer and the semiconductor substrate due to the impurity-diffusion prevention layers.

摘要翻译： 提供了包括半导体衬底，包括暴露半导体衬底的接触孔的绝缘层和填充接触孔的多晶硅层的半导体器件。 多晶硅层掺杂有杂质，并且包括杂质扩散防止层。 在半导体器件中，包含在多晶硅层中的杂质不会由于杂质扩散层而扩散到绝缘层和半导体衬底中。

公开(公告)号：US20190013328A1

公开(公告)日：2019-01-10

申请号：US15871059

申请日：2018-01-14

申请人： Sung Gil KIM ,  Seul Ye KIM ,  Hong Suk KIM ,  Jin Tae NOH ,  Ji Hoon CHOI ,  Jae Young AHN

发明人： Sung Gil KIM ,  Seul Ye KIM ,  Hong Suk KIM ,  Jin Tae NOH ,  Ji Hoon CHOI ,  Jae Young AHN

IPC分类号： H01L27/11582 ,  H01L23/532 ,  H01L27/108 ,  H01L29/06 ,  H01L25/065 ,  H01L23/00

CPC分类号： H01L27/11582 ,  H01L23/53295 ,  H01L24/29 ,  H01L25/065 ,  H01L27/10885 ,  H01L27/10888 ,  H01L27/11565 ,  H01L29/0649

摘要： A stack structure includes conductive layer patterns and interlayer insulating layer patterns alternately stacked on one another. A channel hole penetrates the stack structure. A dielectric layer is disposed on a sidewall of the channel hole. A channel layer is disposed on the dielectric layer and in the channel hole. A passivation layer is disposed on the channel layer and in the channel hole. The channel layer is interposed between the passivation layer and the dielectric layer. An air gap is surrounded by the passivation layer. A width of the air gap is larger than a width of the passivation layer.

公开(公告)号：US20180108672A1

公开(公告)日：2018-04-19

申请号：US15484339

申请日：2017-04-11

申请人： Ji Hoon CHOI ,  Sung Gil KIM ,  Seulye KIM ,  Jung Ho KIM ,  Hong Suk KIM ,  Phil Ouk NAM ,  Jae Young AHN ,  Han Jin LIM

发明人： Ji Hoon CHOI ,  Sung Gil KIM ,  Seulye KIM ,  Jung Ho KIM ,  Hong Suk KIM ,  Phil Ouk NAM ,  Jae Young AHN ,  Han Jin LIM

IPC分类号： H01L27/11582 ,  H01L23/528 ,  H01L27/11565

CPC分类号： H01L27/11582 ,  H01L23/5283 ,  H01L27/11565

摘要： A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.