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    Non-volatile memory devices with multiple layers having band gap relationships among the layers
    2.
    发明授权
    Non-volatile memory devices with multiple layers having band gap relationships among the layers 有权
    具有层之间具有带隙关系的多层的非易失性存储器件

    公开(公告)号：US08460999B2

    公开(公告)日：2013-06-11

    申请号：US13067405

    申请日：2011-05-31

    申请人： Seung-Jae Baik ,  Hong-Suk Kim ,  Si-Young Choi ,  Ki-Hyun Hwang ,  Sang-Jin Hyun

    发明人： Seung-Jae Baik ,  Hong-Suk Kim ,  Si-Young Choi ,  Ki-Hyun Hwang ,  Sang-Jin Hyun

    IPC分类号： H01L21/336

    CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/66833

    摘要： A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.

    摘要翻译： 非易失性存储器件可以包括：半导体衬底上的隧道绝缘层; 隧道绝缘层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅电极。 隧道绝缘层可以包括第一隧道绝缘层和第二隧道绝缘层。 第一隧道绝缘层和第二隧道绝缘层可以顺序堆叠在半导体衬底上。 第二隧道绝缘层可以具有比第一隧道绝缘层更大的带隙。 非易失性存储器件的制造方法可以包括：在半导体衬底上形成隧道绝缘层; 在隧道绝缘层上形成电荷存储层; 在电荷存储层上形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成控制栅电极。

    Methods of manufacturing semiconductor devices
    3.
    发明授权
    Methods of manufacturing semiconductor devices 有权
    制造半导体器件的方法

    公开(公告)号：US08435877B2

    公开(公告)日：2013-05-07

    申请号：US13227799

    申请日：2011-09-08

    申请人： Jun-Kyu Yang ,  Hong-Suk Kim ,  Ju-Yul Lee ,  Ki-Hyun Hwang ,  Jae-Young Ahn

    发明人： Jun-Kyu Yang ,  Hong-Suk Kim ,  Ju-Yul Lee ,  Ki-Hyun Hwang ,  Jae-Young Ahn

    IPC分类号： H01L21/28

    CPC分类号： H01L21/28247 ,  H01L21/28273 ,  H01L21/764 ,  H01L27/11568

    摘要： A semiconductor device includes gate structures including a tunnel insulating layer pattern, a floating gate, a dielectric layer pattern and a control gate sequentially disposed on a substrate. The control gate includes an impurity doped polysilicon layer pattern and a metal layer pattern. The gate structures are spaced apart from each other on the substrate. A capping layer pattern is disposed on a sidewall portion of the metal layer pattern and includes a metal oxide. An insulating layer covers the gate structures and the capping layer pattern. The insulating layer is formed on the substrate and includes an air-gap therein.

    摘要翻译： 半导体器件包括栅极结构，其包括顺序地设置在衬底上的隧道绝缘层图案，浮动栅极，电介质层图案和控制栅极。 控制栅极包括杂质掺杂多晶硅层图案和金属层图案。 栅极结构在衬底上彼此间隔开。 覆盖层图案设置在金属层图案的侧壁部分上并且包括金属氧化物。 绝缘层覆盖栅极结构和覆盖层图案。 绝缘层形成在基板上并且在其中包括气隙。

    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
    5.
    发明申请
    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 有权
    制造半导体器件的方法

    公开(公告)号：US20120064707A1

    公开(公告)日：2012-03-15

    申请号：US13227799

    申请日：2011-09-08

    申请人： Jun-Kyu YANG ,  Hong-Suk Kim ,  Ju-Yul Lee ,  Ki-Hyun Hwang ,  Jae-Young Ahn

    发明人： Jun-Kyu YANG ,  Hong-Suk Kim ,  Ju-Yul Lee ,  Ki-Hyun Hwang ,  Jae-Young Ahn

    IPC分类号： H01L21/28

    CPC分类号： H01L21/28247 ,  H01L21/28273 ,  H01L21/764 ,  H01L27/11568

    摘要： A semiconductor device includes gate structures including a tunnel insulating layer pattern, a floating gate, a dielectric layer pattern and a control gate sequentially disposed on a substrate. The control gate includes an impurity doped polysilicon layer pattern and a metal layer pattern. The gate structures are spaced apart from each other on the substrate. A capping layer pattern is disposed on a sidewall portion of the metal layer pattern and includes a metal oxide. An insulating layer covers the gate structures and the capping layer pattern. The insulating layer is formed on the substrate and includes an air-gap therein.

    摘要翻译： 半导体器件包括栅极结构，其包括顺序地设置在衬底上的隧道绝缘层图案，浮动栅极，电介质层图案和控制栅极。 控制栅极包括杂质掺杂多晶硅层图案和金属层图案。 栅极结构在衬底上彼此间隔开。 覆盖层图案设置在金属层图案的侧壁部分上并且包括金属氧化物。 绝缘层覆盖栅极结构和覆盖层图案。 绝缘层形成在基板上并且在其中包括气隙。

    Nonvolatile memory devices with multiple layers having band gap relationships among the layers
    6.
    发明授权
    Nonvolatile memory devices with multiple layers having band gap relationships among the layers 有权
    具有层之间具有带隙关系的多层的非易失性存储器件

    公开(公告)号：US07973355B2

    公开(公告)日：2011-07-05

    申请号：US12216945

    申请日：2008-07-14

    申请人： Seung-Jae Baik ,  Hong-Suk Kim ,  Si-Young Choi ,  Ki-Hyun Hwang ,  Sang-Jin Hyun

    发明人： Seung-Jae Baik ,  Hong-Suk Kim ,  Si-Young Choi ,  Ki-Hyun Hwang ,  Sang-Jin Hyun

    IPC分类号： H01L29/792

    CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/66833

    摘要： A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.

    摘要翻译： 非易失性存储器件可以包括：半导体衬底上的隧道绝缘层; 隧道绝缘层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅电极。 隧道绝缘层可以包括第一隧道绝缘层和第二隧道绝缘层。 第一隧道绝缘层和第二隧道绝缘层可以顺序堆叠在半导体衬底上。 第二隧道绝缘层可以具有比第一隧道绝缘层更大的带隙。 非易失性存储器件的制造方法可以包括：在半导体衬底上形成隧道绝缘层; 在隧道绝缘层上形成电荷存储层; 在电荷存储层上形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成控制栅电极。

    BURNER FOR DIESEL PARTICULATE FILTER REGENERATION
    7.
    发明申请
    BURNER FOR DIESEL PARTICULATE FILTER REGENERATION 审中-公开
    燃烧器用于柴油颗粒过滤器再生

    公开(公告)号：US20100319330A1

    公开(公告)日：2010-12-23

    申请号：US12568893

    申请日：2009-09-29

    申请人： Soon Chul Hong ,  Hong Suk Kim

    发明人： Soon Chul Hong ,  Hong Suk Kim

    IPC分类号： F01N3/025

    CPC分类号： F01N3/0256 ,  F01N2240/28

    摘要： Provided is a burner using electric discharge as an ignition source such as arc or plasma rotating with flow, and more particularly, to a DPF regenerating burner that improves ignition performance of the burner by having a metal ball on a conical electrode surface where electricity is discharged, inducing accurate electric discharge through a metal ball, and supplying a fuel-air mixture toward the metal ball. The DPF regeneration burner includes a fuel-air mixture supplying unit having an injecting unit be connected to a reaction unit to supply the fuel-air mixture to the reaction unit; and a metal ball on a circumference of the electrode to ignite the injected fuel-air mixture. The DPF regenerating burner generates electric discharge in an electrode surface where a metal ball is located. The ignition performance is improved by accurately supplying a fuel-air mixture at a location where the electric discharge is generated.

    摘要翻译： 提供一种使用放电作为点火源的燃烧器，例如电弧或等离子体流动旋转，更具体地说，涉及一种DPF再生燃烧器，其通过在排出电力的圆锥形电极表面上具有金属球来改善燃烧器的点火性能 通过金属球引起精确的放电，并向金属球供给燃料 - 空气混合物。 DPF再生燃烧器包括燃料 - 空气混合物供应单元，其具有连接到反应单元以将燃料 - 空气混合物供应到反应单元的注入单元; 以及在电极的圆周上的金属球以点燃喷射的燃料 - 空气混合物。 DPF再生燃烧器在金属球所在的电极表面产生放电。 通过在产生放电的位置准确地供给燃料 - 空气混合物来提高点火性能。

    Methods and apparatus for storing, organizing, sharing and rating multimedia objects and documents
    8.
    发明授权
    Methods and apparatus for storing, organizing, sharing and rating multimedia objects and documents 失效
    用于存储，组织，共享和评估多媒体对象和文档的方法和装置

    公开(公告)号：US07711689B2

    公开(公告)日：2010-05-04

    申请号：US11521116

    申请日：2006-09-13

    申请人： Hong Suk Kim

    发明人： Hong Suk Kim

    IPC分类号： G06F17/00

    CPC分类号： G11B27/11 ,  G06Q10/10 ,  G06Q30/02 ,  Y10S707/99944

    摘要： The present invention provides electronic methods and apparatus for storing and organizing access to restricted multimedia objects. This is accomplished using semantic networks by interactively defining a semantic network, identifying a relationship between nodes by associating a label with each semantic link, attaching multimedia objects to nodes and restricting user access to multimedia objects and/or the semantic network. The method allows users to access and edit the semantic network in a Java- or AJAX-based platform-independent software environment. The present invention further provides a method for rating semantic networks by allowing viewers to provide feedback regarding a semantic network's value or usefulness and then calculating a rating in accordance with the received feedback. The present invention further provides a method for linking semantic networks to build a knowledge base.

    摘要翻译： 本发明提供了用于存储和组织对受限多媒体对象的访问的电子方法和装置。 这是通过交互地定义语义网络，通过将标签与每个语义链接相关联来标识节点之间的关系，将多媒体对象附加到节点并限制用户对多媒体对象和/或语义网络的访问来实现的。 该方法允许用户在基于Java或AJAX的独立于平台的软件环境中访问和编辑语义网络。 本发明还提供了一种通过允许观众提供关于语义网络的值或有用性的反馈，然后根据接收到的反馈来计算评级来评价语义网络的方法。 本发明还提供了一种用于链接语义网络以构建知识库的方法。

    Nonvolatile memory devices and methods for fabricating nonvolatile memory devices
    9.
    发明申请
    Nonvolatile memory devices and methods for fabricating nonvolatile memory devices 有权
    用于制造非易失性存储器件的非易失存储器件和方法

    公开(公告)号：US20090014781A1

    公开(公告)日：2009-01-15

    申请号：US12216945

    申请日：2008-07-14

    申请人： Seung-Jae Baik ,  Hong-Suk Kim ,  Si-Young Choi ,  Ki-Hyun Hwang ,  Sang-Jin Hyun

    发明人： Seung-Jae Baik ,  Hong-Suk Kim ,  Si-Young Choi ,  Ki-Hyun Hwang ,  Sang-Jin Hyun

    IPC分类号： H01L29/792 ,  H01L21/28

    CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/66833

    摘要： A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.

    摘要翻译： 非易失性存储器件可以包括：半导体衬底上的隧道绝缘层; 隧道绝缘层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅电极。 隧道绝缘层可以包括第一隧道绝缘层和第二隧道绝缘层。 第一隧道绝缘层和第二隧道绝缘层可以顺序地堆叠在半导体衬底上。 第二隧道绝缘层可以具有比第一隧道绝缘层更大的带隙。 非易失性存储器件的制造方法可以包括：在半导体衬底上形成隧道绝缘层; 在隧道绝缘层上形成电荷存储层; 在电荷存储层上形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成控制栅电极。