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    Photonic quantum ring laser and fabrication method thereof
    2.
    发明授权
    Photonic quantum ring laser and fabrication method thereof 失效
    光子量子环激光器及其制造方法

    公开(公告)号：US08513036B2

    公开(公告)日：2013-08-20

    申请号：US13524256

    申请日：2012-06-15

    申请人： O Dae Kwon ,  Mi-Hyang Shin ,  Seung Eun Lee ,  Young-Heub Jang ,  Young Chun Kim ,  Junho Yoon

    发明人： O Dae Kwon ,  Mi-Hyang Shin ,  Seung Eun Lee ,  Young-Heub Jang ,  Young Chun Kim ,  Junho Yoon

    IPC分类号： H01L21/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/1075 ,  H01S5/1092 ,  H01S5/2027 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2275 ,  H01S2304/04 ,  H04N9/315

    摘要： A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active layer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.

    摘要翻译： 光子量子环（PQR）激光器包括具有多量子阱（MQW）结构和蚀刻的侧面的有源层。 有源层形成为夹在p-GaN和外延生长在设置在支撑衬底上的反射器上的n-GaN层之间。 在有源层的侧面的外侧形成涂层，上部电极与n-GaN层的上部电连接，在n-GaN层上形成分布式布拉格反射体（DBR） 和上电极。 因此，PQR激光器能够振荡适用于低功率显示装置的省电垂直显示3D多模激光器，防止光斑现象，并产生聚焦调整的3D软光。

    Thin film capacitor, thin film capacitor-embedded printed circuit board and manufacturing method of thin film capacitor
    6.
    发明申请
    Thin film capacitor, thin film capacitor-embedded printed circuit board and manufacturing method of thin film capacitor 有权
    薄膜电容器，薄膜电容器嵌入式印刷电路板以及薄膜电容器的制造方法

    公开(公告)号：US20080236878A1

    公开(公告)日：2008-10-02

    申请号：US12076989

    申请日：2008-03-26

    申请人： Seung Eun Lee ,  Yul Kyo Chung ,  Jung Won Lee ,  In Hyung Lee ,  Byung Ik Song

    发明人： Seung Eun Lee ,  Yul Kyo Chung ,  Jung Won Lee ,  In Hyung Lee ,  Byung Ik Song

    IPC分类号： H05K1/18 ,  H01G4/10 ,  H01G7/00

    CPC分类号： H05K1/162 ,  H01G4/105 ,  H01G4/33 ,  H05K2201/0175 ,  H05K2201/0179 ,  Y10T29/435

    摘要： There is provided a thin film capacitor and a capacitor-embedded printed board improved in leakage current characteristics. A dielectric layer is formed of a BiZnNb-based amorphous metal oxide with a predetermined dielectric constant without being heat treated at a high temperature, and metallic phase bismuth of the BiZnNb-based amorphous metal oxide is adjusted in content to attain a desired dielectric constant. Also, another dielectric layer having a different content of metallic phase bismuth may be formed. The thin film capacitor including: a first electrode; a dielectric layer including a first dielectric film formed on the first electrode, the dielectric layer comprising a BiZnNb-based amorphous metal oxide; and a second electrode formed on the dielectric layer, wherein the BiZnNb-based amorphous metal oxide contains metallic phase bismuth.

    摘要翻译： 提供了薄膜电容器和电容器嵌入式印刷电路板，改善了漏电流特性。 电介质层由具有预定介电常数的BiZnNb基非晶态金属氧化物形成，而不在高温下进行热处理，并且将BiZnNb基非晶态金属氧化物的金属相铋的含量调节到所需的介电常数。 此外，可以形成具有不同金属相铋含量的另一介质层。 所述薄膜电容器包括：第一电极; 介电层，包括形成在所述第一电极上的第一电介质膜，所述电介质层包含BiZnNb基非晶态金属氧化物; 以及形成在所述电介质层上的第二电极，其中所述BiZnNb基非晶态金属氧化物含有金属相铋。