公开(公告)号：US08338221B2

公开(公告)日：2012-12-25

申请号：US12628215

申请日：2009-12-01

Applicant: Chang Ho Lee ,  Hyung Dong Kang ,  Hyun Ho Lee ,  Yong Hyun Lee ,  Seon Myung Kim

Inventor： Chang Ho Lee ,  Hyung Dong Kang ,  Hyun Ho Lee ,  Yong Hyun Lee ,  Seon Myung Kim

IPC: H01L21/00 ,  H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC classification number: H01L31/075 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/03767 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

Abstract: A method for manufacturing a thin film type solar cell is disclosed, which is capable of reducing degradation of solar cell by decreasing the number of dangling bonding sites or SiH2 bonding sites existing in amorphous silicon owing to an optimal content ratio of ingredient gases, an optimal chamber pressure, or an optimal substrate temperature during a process for depositing an I-type semiconductor layer of amorphous silicon by a plasma CVD method, the method comprising forming a front electrode layer on a substrate; sequentially depositing P-type, I-type, and N-type semiconductor layers on the front electrode layer; and forming a rear electrode layer on the N-type semiconductor layer, wherein the process for forming the I-type semiconductor layer comprises forming an amorphous silicon layer by the plasma CVD method under such circumstances that at least one of the aforementioned conditions is satisfied, for example, a content ratio of silicon-containing gas to hydrogen-containing gas is within a range between 1:7 and 1:10; a chamber pressure is maintained at a range between 2.0 Torr and 2.4 Torr; and a substrate temperature is maintained at a range between 225° C. and 250° C.

Abstract translation: 公开了一种制造薄膜型太阳能电池的方法，其能够通过减少非晶硅中存在的悬挂键合位置或SiH 2键合位置的数量来减少太阳能电池的劣化，这是由于成分气体的最佳含量比，最佳 在通过等离子体CVD法沉积非晶硅的I型半导体层的工艺期间的腔室压力或最佳衬底温度，所述方法包括在衬底上形成前电极层; 在前电极层上依次沉积P型，I型和N型半导体层; 以及在所述N型半导体层上形成后电极层，其中所述形成所述I型半导体层的工艺包括通过等离子体CVD法在满足上述条件中的至少一个条件的情况下形成非晶硅层， 例如，含硅气体与含氢气体的含有比例在1:7〜1:10的范围内; 腔室压力保持在2.0托和2.4托之间的范围内; 并且衬底温度保持在225℃和250℃之间的范围内。

公开(公告)号：US07736397B2

公开(公告)日：2010-06-15

申请号：US11730979

申请日：2007-04-05

Applicant: Seung Eun Lee ,  Yul Kyo Chung ,  Hyung Dong Kang ,  Hyun Ju Jin

Inventor： Seung Eun Lee ,  Yul Kyo Chung ,  Hyung Dong Kang ,  Hyun Ju Jin

IPC: H01L21/8242 ,  H01G9/00

CPC classification number: H04R19/00 ,  H05K1/162 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0355 ,  H05K2201/09309 ,  H05K2203/0346 ,  H05K2203/0353 ,  Y10T29/417 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/435

Abstract: A method for manufacturing a capacitor embedded in a PCB includes: preparing a copper clad lamination (CCL) substrate having a reinforcement member and copper foils formed on both surfaces of the reinforcement member; planarizing surfaces of the copper foils of the CCL substrate; forming a dielectric layer on the planarized surface of the copper foils; and forming a top electrode on the dielectric layer.

Abstract translation: 一种嵌入在PCB中的电容器的制造方法，其特征在于，包括：具有加强部件的铜包层压（CCL）基板和形成在所述加强部件的两面上的铜箔; 平坦化CCL基板的铜箔表面; 在铜箔的平坦化表面上形成电介质层; 并在电介质层上形成顶部电极。

公开(公告)号：US20100037947A1

公开(公告)日：2010-02-18

申请号：US12462674

申请日：2009-08-07

Applicant: Yong Hyun Lee ,  Hyung Dong Kang

Inventor： Yong Hyun Lee ,  Hyung Dong Kang

IPC: H01L31/105 ,  H01L31/18

CPC classification number: H01L31/0392 ,  H01L31/0465 ,  H01L31/076 ,  Y02E10/548

Abstract: A thin film type solar cell and a method for manufacturing the same is disclosed, the thin film type solar cell comprising a first electrode in a predetermined pattern on a substrate; a first semiconductor layer on the first electrode; a second electrode in a predetermined pattern on the first semiconductor layer; a second semiconductor layer on the second electrode; and a third electrode in a predetermined pattern on the second semiconductor layer, the first and third electrodes being electrically connected with each other, wherein a first solar cell is composed of a combination of the first electrode, the first semiconductor layer, and the second electrode; a second solar cell is composed of a combination of the second electrode, the second semiconductor layer, and the third electrode; and the first and second solar cells are connected in parallel, whereby it is possible to realize improved efficiency of the entire thin film type solar cell without performing a process for a current matching between the first and second solar cells.

Abstract translation: 公开了一种薄膜型太阳能电池及其制造方法，所述薄膜型太阳能电池在基板上具有规定图案的第一电极， 第一电极上的第一半导体层; 在所述第一半导体层上的预定图案中的第二电极; 第二电极上的第二半导体层; 以及在所述第二半导体层上的预定图案中的第三电极，所述第一和第三电极彼此电连接，其中第一太阳能电池由所述第一电极，所述第一半导体层和所述第二电极的组合构成 ; 第二太阳能电池由第二电极，第二半导体层和第三电极的组合构成; 并且第一和第二太阳能电池并联连接，从而可以在不执行用于第一和第二太阳能电池之间的电流匹配的处理的情况下实现整个薄膜型太阳能电池的整体效率。

公开(公告)号：US20090205570A1

公开(公告)日：2009-08-20

申请号：US12216249

申请日：2008-07-01

Applicant: Hyung-Dong Kang

Inventor： Hyung-Dong Kang

IPC: C23C16/00

CPC classification number: C23C16/44 ,  C23C16/4412

Abstract: A gas supply unit and a chemical vapor deposition apparatus are disclosed. A gas supply unit for supplying a reactive gas for a chemical vapor deposition process can include a hot wire part configured to pyrolyze the reactive gas, an ejection part configured to eject the reactive gas towards the hot wire part, and a suction part disposed adjacent to the hot wire part and configured to suck in and exhaust a by-product of the reactive gas. With certain embodiments of the invention, the by-products resulting from the chemical vapor deposition process may be exhausted immediately, so that a thin film may be formed over an object with higher quality, and the cleaning cycles for the inside of the chamber may be extended, for greater productivity.

Abstract translation: 公开了气体供应单元和化学气相沉积设备。 用于提供用于化学气相沉积工艺的反应气体的气体供应单元可以包括构造成热分解反应性气体的热丝部分，被配置为将热反应气体朝向热丝部分喷射的喷射部分，以及邻近 所述热丝部分构造成吸入和排出所述反应性气体的副产物。 对于本发明的某些实施方案，由化学气相沉积工艺产生的副产物可以立即排出，从而可以在具有较高质量的物体上形成薄膜，并且室内部的清洁循环可以是 延长了生产力。

公开(公告)号：US20090117683A1

公开(公告)日：2009-05-07

申请号：US12155156

申请日：2008-05-30

Applicant: Hyung Dong Kang

Inventor： Hyung Dong Kang

IPC: H01L21/00 ,  C30B11/00

CPC classification number: C30B13/14 ,  C30B13/16 ,  C30B29/06 ,  H01L31/068 ,  H01L31/18 ,  Y02E10/547

Abstract: In accordance with the present invention, a method for manufacturing a single-crystal substrate comprising the steps of: preparing a square-shaped frame; pouring polycrystalline molten silicon into the prepared frame; cooling and crystallizing the molten silicon; and forming the single-crystal silicon substrate by transferring a heating element from one corner of the frame to another corner opposite the corner, thus simplifying the entire manufacturing process of the single-crystal substrate and reducing the material cost.

Abstract translation: 根据本发明，制造单晶衬底的方法包括以下步骤：制备正方形框架; 将多晶熔融硅浇注到制备的框架中; 冷却和结晶熔融硅; 并且通过将加热元件从框架的一个角部转移到与拐角相对的另一角部来形成单晶硅基板，从而简化了单晶基板的整个制造工艺并降低了材料成本。

公开(公告)号：US20100136736A1

公开(公告)日：2010-06-03

申请号：US12628215

申请日：2009-12-01

Applicant: Chang Ho LEE ,  Hyung Dong KANG ,  Hyun Ho LEE ,  Yong Hyun LEE ,  Seon Myung KIM

Inventor： Chang Ho LEE ,  Hyung Dong KANG ,  Hyun Ho LEE ,  Yong Hyun LEE ,  Seon Myung KIM

IPC: H01L31/18

CPC classification number: H01L31/075 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/03767 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

Abstract: A method for manufacturing a thin film type solar cell is disclosed, which is capable of reducing degradation of solar cell by decreasing the number of dangling bonding sites or SiH2 bonding sites existing in amorphous silicon owing to an optimal content ratio of ingredient gases, an optimal chamber pressure, or an optimal substrate temperature during a process for depositing an I-type semiconductor layer of amorphous silicon by a plasma CVD method, the method comprising forming a front electrode layer on a substrate; sequentially depositing P-type, I-type, and N-type semiconductor layers on the front electrode layer; and forming a rear electrode layer on the N-type semiconductor layer, wherein the process for forming the I-type semiconductor layer comprises forming an amorphous silicon layer by the plasma CVD method under such circumstances that at least one of the aforementioned conditions is satisfied, for example, a content ratio of silicon-containing gas to hydrogen-containing gas is within a range between 1:7 and 1:10; a chamber pressure is maintained at a range between 2.0 Torr and 2.4 Torr; and a substrate temperature is maintained at a range between 225° C. and 250° C.

Abstract translation: 公开了一种制造薄膜型太阳能电池的方法，其能够通过减少非晶硅中存在的悬挂键合位置或SiH 2键合位置的数量来减少太阳能电池的劣化，这是由于成分气体的最佳含量比，最佳 在通过等离子体CVD法沉积非晶硅的I型半导体层的工艺期间的腔室压力或最佳衬底温度，所述方法包括在衬底上形成前电极层; 在前电极层上依次沉积P型，I型和N型半导体层; 以及在所述N型半导体层上形成后电极层，其中所述形成所述I型半导体层的工艺包括通过等离子体CVD法在满足上述条件中的至少一个条件的情况下形成非晶硅层， 例如，含硅气体与含氢气体的含有比例在1:7〜1:10的范围内; 腔室压力保持在2.0托和2.4托之间的范围内; 并且衬底温度保持在225℃和250℃之间的范围内。

公开(公告)号：US07485411B2

公开(公告)日：2009-02-03

申请号：US11700864

申请日：2007-02-01

Applicant: Hyung Mi Jung ,  Yul Kyo Chung ,  Hyung Dong Kang

Inventor： Hyung Mi Jung ,  Yul Kyo Chung ,  Hyung Dong Kang

IPC: G03C5/00

CPC classification number: H05K1/162 ,  H05K3/16 ,  H05K3/4602 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/09763

Abstract: In a method for manufacturing a printed circuit board with a thin film capacitor embedded therein, a conductive metal is sputtered via a first mask to form a lower electrode. A dielectric material is sputtered via a second mask to form a dielectric layer. The conductive metal is sputtered via a third mask to form an upper electrode. An insulating layer is stacked on a stack body with the upper electrode formed therein and via holes are perforated from a top surface of the insulating layer to a top surface of the lower electrode and from the top surface of the insulating layer to a top surface of the upper electrode formed on the substrate. Also, the stack body with the via holes formed therein is electrolytically and electrolessly plated.

Abstract translation: 在其中嵌入有薄膜电容器的印刷电路板的制造方法中，通过第一掩模溅射导电金属以形成下电极。 通过第二掩模溅射介电材料以形成电介质层。 通过第三掩模溅射导电金属以形成上电极。 绝缘层堆积在堆叠体上，上电极形成在其中，并且通孔从绝缘层的顶表面穿孔到下电极的顶表面，并从绝缘层的顶表面到 上电极形成在基板上。 此外，其中形成有通孔的堆叠体是电解和无电镀的。

公开(公告)号：US20070215855A1

公开(公告)日：2007-09-20

申请号：US11724212

申请日：2007-03-15

Applicant: Hyung Dong Kang

Inventor： Hyung Dong Kang

IPC: H01L29/06

CPC classification number: H01L25/167 ,  H01L33/0004 ,  H01L33/02 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A wavelength-tunable light emitting device. A resilient support substrate is provided, and a light emitting diode is formed on an area of the support substrate. The light emitting diode includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer formed in their order. Pressure is applied to the active layer by bending the support substrate, thereby changing the energy band gap of the active layer.

Abstract translation: 波长可调谐发光器件。 提供弹性支撑基板，并且在支撑基板的区域上形成发光二极管。 发光二极管包括依次形成的第一导电型半导体层，有源层和第二导电型半导体层。 通过弯曲支撑基板向活性层施加压力，从而改变有源层的能带隙。

公开(公告)号：US20070178412A1

公开(公告)日：2007-08-02

申请号：US11700864

申请日：2007-02-01

Applicant: Hyung Mi Jung ,  Yul Kyo Chung ,  Hyung Dong Kang

Inventor： Hyung Mi Jung ,  Yul Kyo Chung ,  Hyung Dong Kang

IPC: G03C5/00

CPC classification number: H05K1/162 ,  H05K3/16 ,  H05K3/4602 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/09763

Abstract: In a method for manufacturing a printed circuit board with a thin film capacitor embedded therein, a conductive metal is sputtered via a first mask to form a lower electrode. A dielectric material is sputtered via a second mask to form a dielectric layer. The conductive metal is sputtered via a third mask to form an upper electrode. An insulating layer is stacked on a stack body with the upper electrode formed therein and via holes are perforated from a top surface of the insulating layer to a top surface of the lower electrode and from the top surface of the insulating layer to a top surface of the upper electrode formed on the substrate. Also, the stack body with the via holes formed therein is electrolytically and electrolessly plated.

Abstract translation: 在其中嵌入有薄膜电容器的印刷电路板的制造方法中，通过第一掩模溅射导电金属以形成下电极。 通过第二掩模溅射介电材料以形成电介质层。 通过第三掩模溅射导电金属以形成上电极。 绝缘层堆积在堆叠体上，上电极形成在其中，并且通孔从绝缘层的顶表面穿孔到下电极的顶表面，并从绝缘层的顶表面到 上电极形成在基板上。 此外，其中形成有通孔的堆叠体是电解和无电镀的。

公开(公告)号：US20110061706A1

公开(公告)日：2011-03-17

申请号：US12618756

申请日：2009-11-15

Applicant: Chang Kyun PARK ,  Hyung Dong KANG

Inventor： Chang Kyun PARK ,  Hyung Dong KANG

IPC: H01L31/042 ,  H01L31/00

CPC classification number: H01L31/022433 ,  H01L31/035272 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/548

Abstract: A thin film type solar cell with a plurality of unit cells connected in series is disclosed, wherein uniform energy conversion efficiency is maintained in all of the unit cells by improving the energy conversion efficiency in the unit cell with the relatively-low energy conversion efficiency, to thereby realize the improved energy conversion efficiency, the thin film type solar cell comprising the plurality of unit cells, each unit cell including a front electrode, a semiconductor layer, and a rear electrode sequentially deposited on a substrate, wherein the thin film type solar cell includes a first unit cell set including at least one first unit cell with a first cell width, and a second unit cell set including at least one second unit cell with a second cell width which is different from the first cell width, wherein the first unit cell set occupies 80 to 95% of an entire area of the unit cells, and the second unit cell set occupies 5 to 20% of the entire area of the unit cells.

Abstract translation: 公开了一种具有串联连接的多个单电池的薄膜型太阳能电池，其中通过以相对低的能量转换效率提高单位电池的能量转换效率，在所有单元电池中均匀地保持能量转换效率， 从而实现提高的能量转换效率，所述薄膜型太阳能电池包括多个单位电池，每个单元电池包括依次沉积在基板上的前电极，半导体层和后电极，其中薄膜型太阳能 单元包括包括具有第一单元宽度的至少一个第一单元单元的第一单元单元组和包括具有与第一单元宽度不同的第二单元宽度的至少一个第二单元单元的第二单元单元组，其中第一单元单元 单位电池组占单位电池整个面积的80〜95％，第二单电池组占单位电池整体面积的5〜20％。