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    Seed crystal for production of silicon single crystal and method for production of silicon single crystal
    2.
    发明授权
    Seed crystal for production of silicon single crystal and method for production of silicon single crystal 有权
    用于生产硅单晶的晶种和硅单晶的生产方法

    公开(公告)号：US06793902B2

    公开(公告)日：2004-09-21

    申请号：US10316402

    申请日：2002-12-11

    申请人： Masahiro Tanaka ,  Yutaka Kishida ,  Teruyuki Tamaki ,  Hideo Kato ,  Seiki Takebayashi

    发明人： Masahiro Tanaka ,  Yutaka Kishida ,  Teruyuki Tamaki ,  Hideo Kato ,  Seiki Takebayashi

    IPC分类号： C01B3326

    CPC分类号： C30B29/06 ,  C30B15/36

    摘要： In the manufacture of a silicon single crystal by the Czochralski method, there is provided a seed crystal for use in the production of the silicon single crystal. This seed crystal is capable of preventing creation of a dislocation occurring during the immersion of the seed crystal in the molten silicon and withstanding the load of a silicon single crystal of great weight as well. There is also a method for the production of the seed crystal and a method for the production of a silicon single crystal which enables the ratio of elimination of dislocation to be increased. A seed crystal for the production of a silicon single crystal for use in the manufacture of a silicon single crystal by the Czochralski method, has the boron concentration in the silicon single crystal as the matrix from which the silicon seed crystal is excised is not less than 4×1018 atoms/cm3 and not more than 4×1019 atoms/cm3 and the silicon seed crystal is excised from the silicon single crystal as the matrix, ground, and lapped, and subsequently subjected to surface etching.

    摘要翻译： 在通过切克劳斯（Czochralski）方法制造单晶硅时，提供了用于制造单晶硅的晶种。 该晶种能够防止在将晶种浸入熔融硅中并且承受重量大的硅单晶的负载时产生位错。 还有一种用于生产晶种的方法和一种能够提高位错消除率的硅单晶的制造方法。 用于制造用于通过切克劳斯基法制造硅单晶的硅单晶的晶种在硅单晶中作为除去硅晶种的基质中的硼浓度不小于 4×10 18原子/ cm 3且不大于4×10 19原子/ cm 3，并且将硅晶种作为基体从硅单晶中切出，研磨并研磨，随后经受表面 蚀刻。

    Silicone single crystal production process
    4.
    发明申请
    Silicone single crystal production process 失效

    公开(公告)号：US20060283378A1

    公开(公告)日：2006-12-21

    申请号：US11451989

    申请日：2006-06-13

    申请人： Yutaka Kishida ,  Seiki Takebayashi ,  Teruyuki Tamaki

    发明人： Yutaka Kishida ,  Seiki Takebayashi ,  Teruyuki Tamaki

    IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

    CPC分类号： C30B15/00 ,  C30B29/06 ,  Y10S117/916

    摘要： In silicon single crystal growth by the Czochralski method using a quartz crucible, a silicon single crystals with a uniform distribution of oxygen concentration can be produced in high yield without being affected by changes of crystal diameter and initial amount of melt feedstock. The oxygen concentration is adjusted by estimating oxygen concentration during growth on the basis of a relationship among three parameters: crucible rotation rate (Ω), crucible temperature (T), and the ratio (β) of contact area of molten silicon with the inner wall of the crucible and with atmospheric gas, and by associating the temperature (T) with the ratio (β) by the function 1/β×Exp(−E/T) where E is the dissolution energy (E) of quartz into molten silicon to control at least one of the rotation rate (Ω) and temperature (T) to conform the estimated oxygen concentration to a target concentration.

    Silicone single crystal production process
    5.
    发明授权
    Silicone single crystal production process 失效
    硅胶单晶生产工艺

    公开(公告)号：US07582160B2

    公开(公告)日：2009-09-01

    申请号：US11451989

    申请日：2006-06-13

    申请人： Yutaka Kishida ,  Seiki Takebayashi ,  Teruyuki Tamaki

    发明人： Yutaka Kishida ,  Seiki Takebayashi ,  Teruyuki Tamaki

    IPC分类号： C30B15/00

    CPC分类号： C30B15/00 ,  C30B29/06 ,  Y10S117/916

    摘要： In silicon single crystal growth by the Czochralski method using a quartz crucible, a silicon single crystals with a uniform distribution of oxygen concentration can be produced in high yield without being affected by changes of crystal diameter and initial amount of melt feedstock. The oxygen concentration is adjusted by estimating oxygen concentration during growth on the basis of a relationship among three parameters: crucible rotation rate (Ω), crucible temperature (T), and the ratio (β) of contact area of molten silicon with the inner wall of the crucible and with atmospheric gas, and by associating the temperature (T) with the ratio (β) by the function 1/β×Exp(−E/T) where E is the dissolution energy (E) of quartz into molten silicon to control at least one of the rotation rate (Ω) and temperature (T) to conform the estimated oxygen concentration to a target concentration.

    摘要翻译： 在使用石英坩埚的切克劳斯基法的硅单晶生长中，可以高产率地产生具有均匀氧浓度分布的硅单晶，而不受晶体直径变化和熔融原料初始量的影响。 通过根据三个参数之间的关系来估计生长期间的氧浓度来调节氧浓度：坩埚旋转速率（Omega），坩埚温度（T）和熔融硅与内壁的接触面积的比（β） 并且通过将温度（T）与比率（β）与功能1 / betaxExp（-E / T）相关联，其中E是石英溶解能量（E）到熔融硅中以控制 旋转速率（Omega）和温度（T）中的至少一个使估计的氧浓度与目标浓度一致。

    Single crystal production method
    6.
    发明授权
    Single crystal production method 有权
    单晶生产方法

    公开(公告)号：US06899759B2

    公开(公告)日：2005-05-31

    申请号：US10283683

    申请日：2002-10-30

    申请人： Yutaka Kishida ,  Teruyuki Tamaki ,  Seiki Takebayashi ,  Wataru Ohashi

    发明人： Yutaka Kishida ,  Teruyuki Tamaki ,  Seiki Takebayashi ,  Wataru Ohashi

    IPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/20 ,  C30B15/30

    CPC分类号： C30B29/06 ,  C30B15/30 ,  Y10T117/1068 ,  Y10T117/1072

    摘要： A single crystal production method based on the Czochralski method comprises controlling a number of crucible rotations and crystal rotations so that a number of vibrations for driving a melt, determined on the basis of the number of crucible and crystal rotations during a single crystal growing procedure, is outside a range from 95% to 105% of a number of sloshing resonance vibrations of the melt. In another embodiment, the method comprises controlling a number of rotations of a crystal and crucible, so that when a number of vibrations for driving a melt, determined by the number of crucible and crystal rotations during a single crystal growing procedure, is within a range from 95% to 105% of a number of sloshing resonance vibrations of the melt, the number of vibrations of the melt due to sloshing does not exceed 2000 times during a period when the number of vibrations is within that range.

    摘要翻译： 基于切克劳斯基法的单晶制造方法包括：控制多个坩埚旋转和晶体旋转，使得在单晶生长过程中，基于坩埚的数量和晶体旋转确定的用于驱动熔体的多个振动， 在熔融物的共振振动的数量的95％至105％的范围之外。 在另一个实施例中，该方法包括控制晶体和坩埚的旋转次数，使得当在单晶生长过程期间由坩埚的数量和晶体旋转确定的用于驱动熔体的多个振动在一定范围内 熔体共振振动数量的95％至105％时，在振动次数在该范围内的期间，由于晃动引起的熔体振动次数不超过2000次。

    Oxide superconductor and process for preparation thereof
    9.
    发明授权
    Oxide superconductor and process for preparation thereof 失效
    氧化物超导体及其制备方法

    公开(公告)号：US5308799A

    公开(公告)日：1994-05-03

    申请号：US834554

    申请日：1992-02-06

    申请人： Mitsuru Morita ,  Keiichi Kimura ,  Katsuyoshi Miyamoto ,  Kiyoshi Sawano ,  Seiki Takebayashi ,  Masamoto Tanaka

    发明人： Mitsuru Morita ,  Keiichi Kimura ,  Katsuyoshi Miyamoto ,  Kiyoshi Sawano ,  Seiki Takebayashi ,  Masamoto Tanaka

    IPC分类号： C04B35/45 ,  C04B35/653 ,  C30B11/00 ,  H01L39/12 ,  C01F11/02 ,  C01F17/00 ,  C01G3/02

    CPC分类号： H01L39/2419 ,  C04B35/4508 ,  C04B35/653 ,  C30B11/00 ,  C30B29/225 ,  H01L39/128 ,  Y10S505/778 ,  Y10S505/779 ,  Y10S505/78 ,  Y10S505/785

    摘要： The present invention relates to an oxide superconductor comprising a composite oxide of RE , Ba and Cu, wherein the superconductor comprises a micro structure comprised of a monocrystalline REBa.sub.2 Cu.sub.3 O.sub.7-x phase (123 phase) and a RE.sub.2 BaCuO.sub.5 phase (211 phase) finely dispersed therein, the 123 phase being formed in a plurality of domains respectively for individual RE compositions and in the order of the 123 phase forming temperatures in respective layers. The present invention relates also to a process for the preparation of an oxide superconductor, characterized by forming a layer from a mixed powder of the RE, Ba and Cu compounds, forming another layer(s) of a mixed powder of RE, Ba and Cu compounds having another RE composition(s) different from the above-mentioned RE composition in the 123 phase forming temperature to form a multi layer structure, putting said plurality of layers on top of one another so that the 123 phase forming temperatures in respective layers continue towards a higher temperature side or a lower temperature side, subjecting the assembly to press molding to form a precursor, putting said precursor on a supporting material with the layer having the highest 123 phase forming temperature being located at the highest position, heating said precursor to a temperature range in a solid liquid coexisting region to bring said precursor into a semi molten state, and either gradually cooling said precursor in a 123 phase temperature range or inoculating the precursor with a seed crystal and gradually cooling the inoculated precursor in the above mentioned temperature range to grow a 123 phase crystal at a growth rate of 5 mm/hr or less.

    摘要翻译： PCT No.PCT / JP91 / 00769 Sec。 371日期：1992年2月6日 102（e）日期1992年2月6日PCT PCT 1991年6月7日PCT公布。 第WO91 / 19029号公报 1991年12月12日。本发明涉及包含RE，Ba和Cu的复合氧化物的氧化物超导体，其中超导体包括由单晶REBa2Cu3O7-x相（123相）和RE2BaCuO5相（ 211相），123相分别形成在多个畴中，用于单独的RE组合物，并且在相应层中以123相形成温度的顺序形成。 本发明还涉及制备氧化物超导体的方法，其特征在于由RE，Ba和Cu化合物的混合粉末形成层，形成RE，Ba和Cu的混合粉末的另一层 在123相形成温度中具有与上述RE组合物不同的另一种RE组合物的化合物以形成多层结构，将所述多个层彼此顶起，使得各层中的123相形成温度继续 朝向较高温度侧或较低温度侧，对组件进行压制成型以形成前体，将所述前体放置在支撑材料上，其中具有最高123相位形成温度的层位于最高位置，将所述前体加热至 固体液体共存区域中的温度范围，以使所述前体进入半熔融状态，并且逐渐地将所述前体在123相t 温度范围或用晶种接种前体，并在上述温度范围内逐渐冷却接种的前体，以生长速度为5mm /小时以下生长123相晶体。