发明授权
- 专利标题： Method for production of silicon single crystal
- 专利标题（中）： 硅单晶的生产方法
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申请号： US09361245申请日： 1999-07-27
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公开(公告)号： US06200384B1公开(公告)日： 2001-03-13
- 发明人: Yutaka Kishida , Wataru Ohashi , Teruyuki Tamaki , Seiki Takebayashi
- 申请人： Yutaka Kishida , Wataru Ohashi , Teruyuki Tamaki , Seiki Takebayashi
- 优先权： JP10-211228 19980727
- 主分类号： C30B1522
- IPC分类号： C30B1522
摘要：
In the growth of a large silicon single crystal weighing not less than 100 kg by the Czokralski method resorting to application of a magnetic field, a crucible, not less than 0.7 m in inside diameter is used, and a cusped magnetic field which manifests a maximum intensity of not more than 1000 gausses on the inner wall of the crucible is applied.
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