公开(公告)号：US08968536B2

公开(公告)日：2015-03-03

申请号：US11764772

申请日：2007-06-18

申请人： Adolph Miller Allen ,  Ki Hwan Yoon ,  Ted Guo ,  Hong S. Yang ,  Sang-Ho Yu

发明人： Adolph Miller Allen ,  Ki Hwan Yoon ,  Ted Guo ,  Hong S. Yang ,  Sang-Ho Yu

IPC分类号： C23C14/35 ,  C23C14/34 ,  H01J37/34

CPC分类号： C23C14/3407 ,  H01J37/3423 ,  H01J37/3435

摘要： A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate.

摘要翻译： 用于溅射室的溅射靶包括安装有溅射板的背板。 在一个版本中，背板包括具有包括环形凹槽的前表面的圆形板。 溅射板包括包括溅射表面的圆盘和具有圆形脊的后侧表面，该圆形脊的形状和尺寸适于装配到背板的环形槽中。

公开(公告)号：US20130260555A1

公开(公告)日：2013-10-03

申请号：US13786644

申请日：2013-03-06

申请人： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang-Ho YU ,  Mathew ABRAHAM

发明人： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang-Ho YU ,  Mathew ABRAHAM

IPC分类号： H01L21/48

CPC分类号： H01L21/76879 ,  H01L21/02057 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/4846 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/66621

摘要： Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

摘要翻译： 提供了在半导体器件的接触结构中沉积接触金属层的方法。 在一个实施例中，提供了一种在半导体器件中沉积用于形成接触结构的接触金属层的方法。 该方法包括进行循环金属沉积工艺，以将接触金属层沉积在衬底上并退火设置在衬底上的接触金属层。 循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以将接触金属层的一部分沉积在衬底上，将接触金属层的该部分暴露于等离子体处理工艺，并重复将衬底暴露于 沉积前体气体混合物，并将接触金属层的部分暴露于等离子体处理工艺，直到实现接触金属层的预定厚度。

公开(公告)号：US20120231626A1

公开(公告)日：2012-09-13

申请号：US13415727

申请日：2012-03-08

申请人： SANG-HYEOB LEE ,  Sang Ho Yu ,  Kai Wu

发明人： SANG-HYEOB LEE ,  Sang Ho Yu ,  Kai Wu

IPC分类号： H01L21/768 ,  H01L21/285

CPC分类号： C23C16/0272 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76846 ,  H01L27/10891

摘要： The invention provides a method of forming a film stack on a substrate, comprising performing a silicon containing gas soak process to form a silicon containing layer over the substrate, reacting with the silicon containing layer to form a tungsten silicide layer on the substrate, depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer.

摘要翻译： 本发明提供了一种在衬底上形成膜堆叠的方法，包括进行含硅气体保温工艺以在衬底上形成含硅层，与含硅层反应以在衬底上形成硅化钨层，沉积 氮化硅层，使用来自远程等离子体的活性氮物质进行氮化处理，并将导电体层直接沉积在氮化钨层上。

公开(公告)号：US20120214303A1

公开(公告)日：2012-08-23

申请号：US13456904

申请日：2012-04-26

申请人： SESHADRI GANGULI ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

发明人： SESHADRI GANGULI ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

IPC分类号： H01L21/3205

CPC分类号： C23C16/18 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

摘要： Embodiments of the invention generally provide methods for forming cobalt silicide. In one embodiment, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.

摘要翻译： 本发明的实施方案通常提供形成硅化钴的方法。 在一个实施例中，用于形成钴硅化物材料的方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体中，然后在第二步骤期间暴露于氢等离子体 预清洁过程。 该方法还包括通过CVD工艺在含硅材料上沉积钴金属层，加热衬底以在第一退火期间在钴金属层和含硅材料的界面处形成包含CoSi的第一钴硅化物层 在蚀刻过程中从衬底去除任何未反应的钴金属，以及在第二退火过程中加热衬底以形成包含CoSi 2的第二钴硅化物层。

公开(公告)号：US08187970B2

公开(公告)日：2012-05-29

申请号：US12969445

申请日：2010-12-15

申请人： Seshadri Ganguli ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

发明人： Seshadri Ganguli ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： C23C16/18 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

摘要： Methods for forming cobalt silicide materials are disclosed herein. In one example, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The exemplary method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the first cobalt silicide layer during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.

摘要翻译： 本文公开了形成钴硅化物材料的方法。 在一个实例中，用于形成钴硅化物材料的方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体中，然后在第二步骤期间暴露于氢等离子体 预清洁过程。 所述示例性方法还包括通过CVD工艺在所述含硅材料上沉积钴金属层，加热所述衬底以在所述钴金属层与所述含硅材料的界面处的第一钴酸钴层中形成包含CoSi的第一钴硅化物层 退火工艺，在蚀刻过程期间从第一钴硅化物层去除任何未反应的钴金属，以及在第二退火工艺期间加热衬底以形成包含CoSi 2的第二钴硅化物层。

公开(公告)号：US20110312148A1

公开(公告)日：2011-12-22

申请号：US13155520

申请日：2011-06-08

申请人： HOON KIM ,  SANG-HYEOB LEE ,  SANG HO YU ,  WEI TI LEE ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA

发明人： HOON KIM ,  SANG-HYEOB LEE ,  SANG HO YU ,  WEI TI LEE ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA

IPC分类号： H01L21/02 ,  B82Y40/00

CPC分类号： H01L28/65 ,  B82Y40/00 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L28/91

摘要： Methods for depositing ruthenium-containing films are provided herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing film to an oxygen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the oxygen-containing gas exposed ruthenium-containing film may be annealed in a hydrogen-containing gas to remove at least some oxygen from the ruthenium-containing film. In some embodiments, the deposition, exposure, and annealing may be repeated to deposit the ruthenium-containing film to a desired thickness.

摘要翻译： 本文提供了沉积含钌膜的方法。 在一些实施方案中，在基材上沉积含钌膜的方法可以包括使用含钌前驱体将沉积的含钌膜沉积在基板上， 并将沉积的含钌膜暴露于含氧气体中以从沉积的含钌膜中除去至少一些碳。 在一些实施方案中，含氧气体暴露的含钌膜可以在含氢气体中退火以从含钌膜中除去至少一些氧。 在一些实施例中，可以重复沉积，曝光和退火，以将含钌膜沉积到期望的厚度。

公开(公告)号：US20110124192A1

公开(公告)日：2011-05-26

申请号：US13014656

申请日：2011-01-26

申请人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-Ho Yu ,  Kevin Moraes ,  See-Eng Phan

发明人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-Ho Yu ,  Kevin Moraes ,  See-Eng Phan

IPC分类号： H01L21/768

CPC分类号： C23C16/18 ,  C23C16/42 ,  C23C16/56 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/68785 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76864

摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.

摘要翻译： 本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。 在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积 在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。 在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在 钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

公开(公告)号：US07932671B2

公开(公告)日：2011-04-26

申请号：US11639169

申请日：2006-12-15

申请人： Kyung-Min Park ,  Seok-Jong Lee ,  Jae-Hee Park ,  Sang-Ho Yu

发明人： Kyung-Min Park ,  Seok-Jong Lee ,  Jae-Hee Park ,  Sang-Ho Yu

IPC分类号： H01J1/62

CPC分类号： H01L51/5088 ,  H01L27/3244 ,  H01L51/0078 ,  H01L51/5092 ,  H01L2251/5315

摘要： An organic electroluminescent display (OELD) device includes first substrate; a plurality of gate lines and a plurality of data lines crossing each other to define a plurality of pixel regions; a power line parallel to and separated from the gate lines; switching and driving elements connected to each other in each of the plurality of pixel regions on the first substrate; a first electrode on the first substrate and connected to one of the driving element; an injection layer on the first electrode; an organic luminescent layer on the injection layer; a second electrode of a transparent conductive material on the organic luminescent layer; and a second substrate attached to and facing the first substrate.

摘要翻译： 有机电致发光显示器（OELD）器件包括第一衬底; 多个栅极线和多条数据线彼此交叉以限定多个像素区域; 与栅极线平行并与栅极线分离的电源线; 在所述第一基板上的所述多个像素区域中的每一个中彼此连接的开关和驱动元件; 所述第一电极在所述第一基板上并连接到所述驱动元件之一; 在第一电极上的注入层; 注入层上的有机发光层; 在有机发光层上的透明导电材料的第二电极; 以及附接到第一基板并面向第一基板的第二基板。

公开(公告)号：US20110086509A1

公开(公告)日：2011-04-14

申请号：US12969445

申请日：2010-12-15

申请人： SESHADRI GANGULI ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

发明人： SESHADRI GANGULI ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

IPC分类号： H01L21/285

CPC分类号： C23C16/18 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

摘要： Embodiments of the invention generally provide methods for forming cobalt silicide. In one embodiment, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.

摘要翻译： 本发明的实施方案通常提供形成硅化钴的方法。 在一个实施例中，用于形成钴硅化物材料的方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体中，然后在第二步骤期间暴露于氢等离子体 预清洁过程。 该方法还包括通过CVD工艺在含硅材料上沉积钴金属层，加热衬底以在第一退火期间在钴金属层和含硅材料的界面处形成包含CoSi的第一钴硅化物层 在蚀刻过程中从衬底去除任何未反应的钴金属，以及在第二退火过程中加热衬底以形成包含CoSi 2的第二钴硅化物层。

公开(公告)号：US07923916B2

公开(公告)日：2011-04-12

申请号：US11639310

申请日：2006-12-15

申请人： Jung-Soo Heo ,  Jae-Hee Park ,  Sang-Ho Yu ,  Kyung-Min Park ,  Sung-Hoon Choi ,  Seok-Jong Lee

发明人： Jung-Soo Heo ,  Jae-Hee Park ,  Sang-Ho Yu ,  Kyung-Min Park ,  Sung-Hoon Choi ,  Seok-Jong Lee

IPC分类号： H05B33/00 ,  H01L51/50

CPC分类号： H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L51/5088 ,  H01L2251/5315

摘要： An organic electroluminescent device including a switching element and a driving element connected to the switching element on a substrate including a pixel region, a cathode connected to the driving element, in which the cathode includes molybdenum (Mo), an emitting layer on the cathode, and an anode on the emitting layer.

摘要翻译： 一种有机电致发光器件，包括开关元件和连接到基板上的开关元件的驱动元件，该基板包括像素区域，与驱动元件连接的阴极，阴极包括钼（Mo），阴极上的发光层， 和发光层上的阳极。