摘要:
Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.
摘要:
A method of manufacturing a trench isolation comprising the steps of sequentially forming a first oxide layer a nitride layer and a first photoresist layer, forming a narrow trench and a wide trench, forming a first thermal oxide layer in the side and bottom face of trenches, forming a second oxide layer, depositing a first polysilicon oxide layer filling in the narrow trench by growing the first polysilicon layer growing into a second silicon layer, forming a third oxide layer, coating a second photoresist on the wide trench, and etching a third oxide layer. The present invention can provide a method of manufacturing a trench isolation which can prevent formation of voids in the narrow trench and the difference of height between narrow trench and wide trench, thereby preventing a conducting line short circuit and an increase of parasitic capacitance and a fall of the characteristic of the MOS transistor.
摘要:
Methods for processing substrates are provided herein. In some embodiments, a method for processing substrates includes providing to a process chamber a substrate comprising an exposed dielectric layer having a feature formed therein. A mask layer comprising titanium nitride may be selectively deposited atop corners of the feature. A barrier layer may be selectively deposited atop the mask layer and into a bottom portion of the feature. The barrier layer deposited on the bottom portion of the feature may be etched to redistribute at least a portion of the barrier layer onto sidewalls of the feature.
摘要:
A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate.
摘要:
A dual magnetron for plasma sputtering including a source magnetron and an auxiliary magnetron, each of which rotate about the center of the target at respective radii. The positions of the magnetron can be moved in complementary radial directions between sputter deposition and target cleaning. The magnetrons have different characteristics of size, strength, and imbalance. The source magnetron is smaller, stronger, and unbalanced source magnetron and is positioned near the edge of the wafer in sputter deposition and etching. The auxiliary magnetron is larger, weak, and more balanced and used for cleaning the center of the target and guiding sputter ions from the source magnetron in sputter deposition. Each magnetron may have its plasma shorted out in its radially outer position.
摘要:
A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.
摘要:
A dual magnetron for plasma sputtering including a source magnetron and an auxiliary magnetron, each of which rotate about the center of the target at respective radii. The positions of the magnetron can be moved in complementary radial directions between sputter deposition and target cleaning. The magnetrons have different characteristics of size, strength, and imbalance. The source magnetron is smaller, stronger, and unbalanced source magnetron and is positioned near the edge of the wafer in sputter deposition and etching. The auxiliary magnetron is larger, weak, and more balanced and used for cleaning the center of the target and guiding sputter ions from the source magnetron in sputter deposition. Each magnetron may have its plasma shorted out in its radially outer position.
摘要:
A multi-track magnetron having a convolute shape and asymmetric about the target center about which it rotates. A plasma track is formed as a closed loop between opposed inner and outer magnetic poles, preferably as two or three radially arranged and spirally shaped counter-propagating tracks with respect to the target center and preferably passing over the rotation axis. The pole shape may be optimized to produce a cumulative track length distribution conforming to the function L=arn. After several iterations of computerized optimization, the pole shape may be tested for sputtering uniformity with different distributions of magnets in the fabricated pole pieces. If the uniformity remains unsatisfactory, the design iteration is repeated with a different n value, different number of tracks, or different pole widths. The optimization reduces azimuthal sidewall asymmetry and improves radial deposition uniformity.
摘要翻译:具有卷绕形状且围绕其旋转的目标中心不对称的多轨磁控管。 等离子体轨道形成为相对的内部和外部磁极之间的闭合回路,优选地相对于目标中心并且优选地通过旋转轴线而形成为两个或三个径向布置且螺旋形的反向传播轨迹。 极点形状可以被优化以产生符合函数L = ar 的累积轨迹长度分布。 经过数次迭代的计算机化优化,可以测试极点形状,使其在制造的极片中具有不同的磁体分布的溅射均匀性。 如果均匀性不能令人满意,则使用不同的n值,不同数量的轨道或不同的极宽重复设计迭代。 优化可减少方位角侧壁不对称性,提高径向沉积均匀性。
摘要:
A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate.
摘要:
A hand-held cloth iron becomes very hot while in use. Even when cool, it is heavy and has sharp corners. Any of these characteristics can cause injury or damage if the iron falls. An improved iron includes a heel rest connected to the rear of the iron body. One or more permanent magnet pieces embedded in the heel rest produce a magnetic pull force between the magnets and the ferromagnetic steel top of an ironing board when the iron is stood on its heel. The magnets are strong enough to stabilize the iron, even on a board with a padded cover, without impractically impeding the operator's normal ironing motions. The magnetic rear plate can either be coplanar or slightly recessed with respect to the outer surface of the heel rest, and the amount of recess can be made adjustable by mechanical means so that the magnetic pull force between the magnetic heel rest and the ferromagnetic steel top of an ironing board can be adjusted by a user to suit his or her preference.