公开(公告)号：US20120231626A1

公开(公告)日：2012-09-13

申请号：US13415727

申请日：2012-03-08

申请人： SANG-HYEOB LEE ,  Sang Ho Yu ,  Kai Wu

发明人： SANG-HYEOB LEE ,  Sang Ho Yu ,  Kai Wu

IPC分类号： H01L21/768 ,  H01L21/285

CPC分类号： C23C16/0272 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76846 ,  H01L27/10891

摘要： The invention provides a method of forming a film stack on a substrate, comprising performing a silicon containing gas soak process to form a silicon containing layer over the substrate, reacting with the silicon containing layer to form a tungsten silicide layer on the substrate, depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer.

摘要翻译： 本发明提供了一种在衬底上形成膜堆叠的方法，包括进行含硅气体保温工艺以在衬底上形成含硅层，与含硅层反应以在衬底上形成硅化钨层，沉积 氮化硅层，使用来自远程等离子体的活性氮物质进行氮化处理，并将导电体层直接沉积在氮化钨层上。

公开(公告)号：US08865594B2

公开(公告)日：2014-10-21

申请号：US13415727

申请日：2012-03-08

申请人： Sang-Hyeob Lee ,  Sang Ho Yu ,  Kai Wu

发明人： Sang-Hyeob Lee ,  Sang Ho Yu ,  Kai Wu

IPC分类号： H01L21/44 ,  C23C16/455 ,  H01L21/285 ,  C23C16/56 ,  H01L21/768 ,  C23C16/02 ,  C23C16/34 ,  H01L27/108

CPC分类号： C23C16/0272 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76846 ,  H01L27/10891

摘要： The invention provides a method of forming a film stack on a substrate, comprising performing a silicon containing gas soak process to form a silicon containing layer over the substrate, reacting with the silicon containing layer to form a tungsten silicide layer on the substrate, depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer.

摘要翻译： 本发明提供了一种在衬底上形成膜堆叠的方法，包括进行含硅气体保温工艺以在衬底上形成含硅层，与含硅层反应以在衬底上形成硅化钨层，沉积 氮化硅层，使用来自远程等离子体的活性氮物质进行氮化处理，并将导电体层直接沉积在氮化钨层上。

公开(公告)号：US20110233778A1

公开(公告)日：2011-09-29

申请号：US12730888

申请日：2010-03-24

申请人： Sang-Hyeob Lee ,  Sang Ho Yu ,  Wei Ti Lee ,  Seshadri Ganguli ,  Hyoung-Chan Ha ,  Hoon Kim

发明人： Sang-Hyeob Lee ,  Sang Ho Yu ,  Wei Ti Lee ,  Seshadri Ganguli ,  Hyoung-Chan Ha ,  Hoon Kim

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/485 ,  C23C16/34 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/321 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53266 ,  H01L27/10891 ,  H01L29/4236 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention provides a method of forming a film stack on a substrate, comprising depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer without depositing a tungsten nucleation layer on the tungsten nitride layer as a growth site for tungsten.

摘要翻译： 本发明提供了一种在衬底上形成膜堆叠的方法，包括在衬底上沉积氮化钨层，使用来自远程等离子体的活性氮物质对衬底进行氮化处理，并将导电体层直接沉积在钨上 氮化物层，而不在钨氮化物层上沉积钨成核层，作为钨的生长位置。

公开(公告)号：US09129945B2

公开(公告)日：2015-09-08

申请号：US12730888

申请日：2010-03-24

申请人： Sang-Hyeob Lee ,  Sang Ho Yu ,  Wei Ti Lee ,  Seshadri Ganguli ,  Hyoung-Chan Ha ,  Hoon Kim

发明人： Sang-Hyeob Lee ,  Sang Ho Yu ,  Wei Ti Lee ,  Seshadri Ganguli ,  Hyoung-Chan Ha ,  Hoon Kim

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L23/485 ,  C23C16/34 ,  H01L21/28 ,  H01L21/285 ,  H01L21/321 ,  H01L27/108 ,  H01L29/423

CPC分类号： H01L23/485 ,  C23C16/34 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/321 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53266 ,  H01L27/10891 ,  H01L29/4236 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention provides a method of forming a film stack on a substrate, comprising depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer without depositing a tungsten nucleation layer on the tungsten nitride layer as a growth site for tungsten.

摘要翻译： 本发明提供了一种在衬底上形成膜堆叠的方法，包括在衬底上沉积氮化钨层，使用来自远程等离子体的活性氮物质对衬底进行氮化处理，并将导电体层直接沉积在钨上 氮化物层，而不在钨氮化物层上沉积钨成核层，作为钨的生长位置。

公开(公告)号：US09926639B2

公开(公告)日：2018-03-27

申请号：US13167001

申请日：2011-06-23

申请人： Hoon Kim ,  Wei Ti Lee ,  Sang Ho Yu ,  Seshadri Ganguli ,  Hyoung-Chan Ha ,  Sang Hyeob Lee

发明人： Hoon Kim ,  Wei Ti Lee ,  Sang Ho Yu ,  Seshadri Ganguli ,  Hyoung-Chan Ha ,  Sang Hyeob Lee

IPC分类号： C25D5/02 ,  H01L21/768 ,  H01L21/285

CPC分类号： C25D5/02 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76898

摘要： Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and bottom surface of the opening; and depositing a conductive material on the layer to fill the opening. In some embodiments, one of ruthenium (Ru) or cobalt (Co) is deposited on the sidewall and bottom surface of the opening. The materials may be deposited by chemical vapor deposition (CVD) or by physical vapor deposition (PVD).

公开(公告)号：US08637390B2

公开(公告)日：2014-01-28

申请号：US13116794

申请日：2011-05-26

申请人： Seshadri Ganguli ,  Sang Ho Yu ,  Sang-Hyeob Lee ,  Hyoung-Chan Ha ,  Wei Ti Lee ,  Hoon Kim ,  Srinivas Gandikota ,  Yu Lei ,  Kevin Moraes ,  Xianmin Tang

发明人： Seshadri Ganguli ,  Sang Ho Yu ,  Sang-Hyeob Lee ,  Hyoung-Chan Ha ,  Wei Ti Lee ,  Hoon Kim ,  Srinivas Gandikota ,  Yu Lei ,  Kevin Moraes ,  Xianmin Tang

IPC分类号： H01L21/4763

CPC分类号： H01L21/28079 ,  H01L21/28088 ,  H01L21/32051 ,  H01L29/49

摘要： Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode.

摘要翻译： 本文提供了金属门结构及其形成方法。 在一些实施例中，在具有形成在高k电介质层中的特征的衬底上形成金属栅极结构的方法可以包括在电介质层顶部的特征内沉积第一层; 在所述特征内在所述第一层顶部沉积包含钴或镍的第二层; 以及在第二层顶部沉积包括特征内的金属的第三层以填充该特征，其中第一层或第二层中的至少一层形成润湿层以形成后续沉积层的成核层，其中第一层 第二层或第三层形成功函数层，并且其中第三层形成栅电极。

公开(公告)号：US20100003406A1

公开(公告)日：2010-01-07

申请号：US12494901

申请日：2009-06-30

申请人： Hyman Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong (John) Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

发明人： Hyman Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong (John) Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

IPC分类号： C23C16/34

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

摘要翻译： 本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。 在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔， 集中通道侧壁，集中通道。 腔室盖组件还包括设置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS） 与集中通道的流体通信。

公开(公告)号：US20090053426A1

公开(公告)日：2009-02-26

申请号：US12201976

申请日：2008-08-29

申请人： JIANG LU ,  Hyoung-Chan Ha ,  Paul Ma ,  Seshadri Ganguli ,  Joseph F. Aubuchon ,  Sang Ho Yu ,  Murali K. Narasimhan

发明人： JIANG LU ,  Hyoung-Chan Ha ,  Paul Ma ,  Seshadri Ganguli ,  Joseph F. Aubuchon ,  Sang Ho Yu ,  Murali K. Narasimhan

IPC分类号： B05D5/12 ,  B05D3/06

CPC分类号： H01L21/76871 ,  C23C16/16 ,  C23C16/18 ,  C23C16/42 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873

摘要： Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.

摘要翻译： 本发明的实施方案提供了在阻挡层上沉积钴层并随后在其上沉积诸如铜或铜合金的导电材料的方法。 在一个实施例中，提供了一种在衬底表面上沉积材料的方法，其包括在衬底上形成阻挡层，将衬底暴露于六羰基丁基乙炔二钴（CCTBA）和氢，以在气相沉积期间在阻挡层上形成钴层 工艺（例如，CVD或ALD），以及在钴层上沉积导电材料。 在一些实例中，阻挡层和/或钴层可以在诸如热处理，原位等离子体处理或远程等离子体处理的处理过程中暴露于气体或试剂。

公开(公告)号：US08642468B2

公开(公告)日：2014-02-04

申请号：US13093710

申请日：2011-04-25

申请人： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

发明人： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

IPC分类号： H01L21/4763

CPC分类号： H01L21/28008 ,  C23C16/06 ,  C23C16/32 ,  C23C16/42 ,  C23C16/45542 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966

摘要： Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

摘要翻译： 本发明的实施方案通常提供沉积含金属材料及其组合物的方法。 所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。 在一个实施例中，提供了一种用于处理衬底的方法，其包括沉积具有大于10的介电常数的介电材料，在电介质材料中形成特征定义，在功能定义的侧壁和底部上共同保存功函件材料 并且将金属浇注填充材料沉积在功函材料上以填充特征定义，其中通过使具有式MXY的至少一种金属卤化物前体反应沉积功函材料，其中M是钽，铪，钛和 镧，X是选自氟，氯，溴或碘的卤化物，y为3〜5。

公开(公告)号：US08291857B2

公开(公告)日：2012-10-23

申请号：US12494901

申请日：2009-06-30

申请人： Hyman Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong (John) Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

发明人： Hyman Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong (John) Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

IPC分类号： C23C16/452 ,  C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

摘要翻译： 本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。 在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔， 集中通道侧壁，集中通道。 腔室盖组件还包括设置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS） 与集中通道的流体通信。