Abstract:
A bulk capacitor includes a first electrode formed of a metal foil and a semi-conductive porous ceramic body formed on the metal foil. A dielectric layer is formed on the porous ceramic body for example by oxidation. A conductive medium is deposited on the porous ceramic body filling the pores of the porous ceramic body and forming a second electrode. The capacitor can then be encapsulated with various layers and can include conventional electrical terminations. A method of manufacturing a bulk capacitor includes forming a conductive porous ceramic body on a first electrode formed of a metal foil, oxidizing to form a dielectric layer and filling the porous body with a conductive medium to form a second electrode. A thin semi-conductive ceramic layer can also be disposed between the metal foil and the porous ceramic body.
Abstract:
An electrolytic capacitor includes a metal case, a porous pellet anode disposed within the metal case, an electrolyte disposed within the metal case, and a cathode element formed of an electrophoretically deposited metal or metal oxide powder of a uniform thickness disposed within the metal case and surrounding the anode. A method of manufacturing an electrolytic capacitor includes providing a metal case, electrophoretically depositing on the metal can a refractory metal oxide to form a cathode element, and placing a porous pellet anode and an electrolyte within the can such that the cathode element and the anode element being separated by the electrolyte.
Abstract:
A dielectric ceramic composition has a dielectric constant, K, of at least 200 and a dielectric loss, DF, of 0.0006 or less at 1 MHz. The dielectric ceramic composition may be formed by sintering by firing in air without a controlled atmosphere. The dielectric ceramic composition may have a major component of 92.49 to 97.5 wt. % containing 60.15 to 68.2 wt. % strontium titanate, 11.02 to 23.59 wt. % calcium titanate and 7.11 to 21.32 wt. % barium titanate; and a minor component of 2.50 to 7.51 wt. % containing 1.18 to 3.55 wt. % calcium zirconate, 0.50 to 1.54 wt. % bismuth trioxide, 0.2 to 0.59 wt. % zirconia, 0.02 to 0.07 wt. % manganese dioxide, 0.12 to 0.35 wt. % zinc oxide, 0.12 to 0.35 wt. % lead-free glass frit, 0.24 to 0.71 wt. % kaolin clay and 0.12 to 0.35 wt. % cerium oxide. UHF antennas and monolithic ceramic components may use the dielectric ceramic composition.
Abstract:
An electronic component such as a capacitor includes a substrate having first and second principal surfaces, a dielectric layer overlaying the first principal surface of the substrate, a first electrode, and a second electrode. There is a passivation layer overlaying the first and second electrodes, a first opening being formed in the passivation layer over the first electrode and a second opening being formed in the passivation layer over the second electrode. A first bottom electrode termination is positioned in the first opening and a second bottom electrode termination is positioned in the second opening. The first bottom electrode termination is electrically connected to the first electrode and the second bottom electrode termination is electrically connected to the second electrode. A standoff is positioned between the first bottom electrode termination and the second bottom electrode termination and attached to the passivation layer to thereby provide support for the electronic component when mounted. The standoff provides resistance to tilting.
Abstract:
A bulk capacitor includes a first electrode formed of a metal foil and a semi-conductive porous ceramic body formed on the metal foil. A dielectric layer is formed on the porous ceramic body for example by oxidation. A conductive medium is deposited on the porous ceramic body filling the pores of the porous ceramic body and forming a second electrode. The capacitor can then be encapsulated with various layers and can include conventional electrical terminations. A method of manufacturing a bulk capacitor includes forming a conductive porous ceramic body on a first electrode formed of a metal foil, oxidizing to form a dielectric layer and filling the porous body with a conductive medium to form a second electrode. A thin semi-conductive ceramic layer can also be disposed between the metal foil and the porous ceramic body.
Abstract:
A bulk capacitor includes a first electrode formed of a metal foil and a semi-conductive porous ceramic body formed on the metal foil. A dielectric layer is formed on the porous ceramic body for example by oxidation. A conductive medium is deposited on the porous ceramic body filling the pores of the porous ceramic body and forming a second electrode. The capacitor can then be encapsulated with various layers and can include conventional electrical terminations. A method of manufacturing a bulk capacitor includes forming a conductive porous ceramic body on a first electrode formed of a metal foil, oxidizing to form a dielectric layer and filling the porous body with a conductive medium to form a second electrode. A thin semi-conductive ceramic layer can also be disposed between the metal foil and the porous ceramic body.
Abstract:
An integrally packaged integrated circuit device including an integrated circuit die including a crystalline substrate having first and second generally planar surfaces and edge surfaces and an active surface formed on the first generally planar surface, at least one chip scale packaging layer formed over the active surface and at least one electrical contact formed over the at least one chip scale packaging layer, the at least one electrical contact being connected to circuitry on the active surface by at least one pad formed on the first generally planar surface.
Abstract:
A composite membrane for separating at least one dissolved or suspended component from a liquid phase, and characterized by solvent stability, comprises:(A) a substrate microfiltration, ultrafiltration or reverse osmosis membrane which has been initially formed from at least one member selected from non-crosslinked acrylonitrile homopolymers and copolymers, and non-crosslinked substituted acrylonitrile homopolymers and copolymers, and which has been subjected to at least one in situ crosslinking reaction; and(B) superimposed upon the substrate membrane, at least one coating including at least one component selected from hydrophilic monomers containing reactive functions, hydrophilic oligomers containing reactive functions and hydrophilic polymers containing reactive functions, such reactive functions having been subjected to a post-coating crosslinking reaction.
Abstract:
A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.
Abstract:
A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.